PDTB114ET
  • Share:

Nexperia USA Inc. PDTB114ET

Manufacturer No:
PDTB114ET
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA PDTB114ET - SMALL S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTB114ET is a 50 V, 500 mA PNP resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is packaged in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited. The transistor features built-in bias resistors, which simplify circuit design and reduce the overall component count. It is AEC-Q101 qualified, ensuring reliability in high-temperature applications up to 175 °C, and serves as a cost-saving alternative for BC807 series in digital applications.

Key Specifications

Type number Package version Package name Size (mm) Channel type P tot (mW) I C [max] (mA) R1 (typ) (kΩ) V CEO (V)
PDTB114ET SOT23 SOT23 2.9 x 1.3 x 1 PNP 250 500 10 50
Parameter Value
Current - Collector (Ic) [max] 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) (Ohms) 10 kΩ
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50 mA, 5 V
Vce Saturation (Max) @ Ib, Ic 100 mV @ 2.5 mA, 50 mA
Frequency - Transition 140 MHz
Power - Max 320 mW

Key Features

  • High Output Current Capability: The PDTB114ET can handle up to 500 mA of output current.
  • Built-in Bias Resistors: The transistor includes built-in bias resistors, which simplify circuit design and reduce the overall component count.
  • High Temperature Applications: Qualified for use in high-temperature applications up to 175 °C.
  • AEC-Q101 Qualified: Ensures reliability and compliance with automotive standards.
  • Cost-Effective Alternative: Serves as a cost-saving alternative for BC807 series in digital applications.
  • Small Package Size: Packaged in a compact SOT23 SMD package, ideal for space-constrained designs.

Applications

  • Digital Applications: Suitable for digital circuits where a cost-effective and compact solution is required.
  • Control of IC Inputs: Can be used to control inputs to integrated circuits.
  • Switching Loads: Effective in switching applications due to its high current handling capability.
  • Automotive and Industrial: AEC-Q101 qualification makes it suitable for automotive and industrial applications.
  • Consumer and Mobile Devices: Can be used in various consumer and mobile devices requiring compact and reliable transistor solutions.

Q & A

  1. What is the maximum output current of the PDTB114ET?

    The PDTB114ET has a maximum output current capability of 500 mA.

  2. What type of package does the PDTB114ET come in?

    The PDTB114ET is packaged in a SOT23 Surface-Mounted Device (SMD) plastic package.

  3. What is the maximum collector-emitter breakdown voltage of the PDTB114ET?

    The maximum collector-emitter breakdown voltage is 50 V.

  4. Does the PDTB114ET have built-in bias resistors?

    Yes, the PDTB114ET features built-in bias resistors.

  5. What is the maximum operating temperature of the PDTB114ET?

    The PDTB114ET can operate in high-temperature applications up to 175 °C.

  6. Is the PDTB114ET AEC-Q101 qualified?

    Yes, the PDTB114ET is AEC-Q101 qualified, making it suitable for automotive applications.

  7. What are some common applications of the PDTB114ET?

    Common applications include digital circuits, control of IC inputs, switching loads, and use in automotive and industrial devices.

  8. What is the typical base resistor value in the PDTB114ET?

    The typical base resistor value (R1) is 10 kΩ.

  9. What is the DC current gain (hFE) of the PDTB114ET?

    The DC current gain (hFE) is 70 at 50 mA and 5 V.

  10. Is the PDTB114ET RoHS compliant?

    Yes, the PDTB114ET is RoHS compliant.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
55

Please send RFQ , we will respond immediately.

Same Series
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
MJD45H11-001
MJD45H11-001
onsemi
TRANS PNP 80V 8A IPAK
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

PRTR5V0U2X,215
PRTR5V0U2X,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PTVS14VS1UR/8X
PTVS14VS1UR/8X
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC SOD123W
BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PMEG2020EH/6X
PMEG2020EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
BZX84-B22,215
BZX84-B22,215
Nexperia USA Inc.
DIODE ZENER 22V 250MW TO236AB
BZX84-C12/DG/B3,23
BZX84-C12/DG/B3,23
Nexperia USA Inc.
DIODE ZENER 12.05V 250MW TO236AB
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74LVC273D,112
74LVC273D,112
Nexperia USA Inc.
NEXPERIA 74LVC273D - D FLIP-FLOP
74LV4094DB,112
74LV4094DB,112
Nexperia USA Inc.
IC 8ST SHIFT/STORE BUS 16-SSOP