PBSS8110Z,135
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Nexperia USA Inc. PBSS8110Z,135

Manufacturer No:
PBSS8110Z,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS8110Z,135 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of Nexperia's BISS (Bipolar Integrated Switching Transistor) family, known for its low collector-emitter saturation voltage (V_CEsat) and high current gain. It is designed to provide reliable and efficient switching and amplification in various electronic circuits.

Key Specifications

ParameterValue
Collector-Emitter Breakdown Voltage (Vceo)100 V
Power Dissipation (Pd)1.4 W
DC Current Gain (hFE@Ic,Vce)150 @ 250 mA, 10 V
Collector Current (Ic)1 A
Collector-Emitter Saturation Voltage (V_CEsat)Low V_CEsat (typical value not specified here, refer to datasheet for details)

Key Features

  • Low collector-emitter saturation voltage (V_CEsat) for efficient switching.
  • High DC current gain (hFE) for reliable amplification.
  • High collector current (Ic) of up to 1 A.
  • High collector-emitter breakdown voltage (Vceo) of 100 V for robust operation.
  • Compact package suitable for various applications.

Applications

The PBSS8110Z,135 transistor is suitable for a wide range of applications, including:

  • Switching and amplification in power supplies and DC-DC converters.
  • Automotive systems, such as ignition systems and motor control.
  • Industrial control systems, including motor drives and power management.
  • Consumer electronics, such as audio amplifiers and power amplifiers.

Q & A

  1. What is the collector-emitter breakdown voltage of the PBSS8110Z,135?
    The collector-emitter breakdown voltage (Vceo) is 100 V.
  2. What is the maximum collector current of the PBSS8110Z,135?
    The maximum collector current (Ic) is 1 A.
  3. What is the typical DC current gain of the PBSS8110Z,135?
    The typical DC current gain (hFE) is 150 at 250 mA and 10 V.
  4. What is the power dissipation of the PBSS8110Z,135?
    The power dissipation (Pd) is 1.4 W.
  5. Why is the PBSS8110Z,135 known for its low V_CEsat?
    The PBSS8110Z,135 is known for its low collector-emitter saturation voltage (V_CEsat), which makes it efficient for switching applications.
  6. In which types of systems is the PBSS8110Z,135 commonly used?
    The PBSS8110Z,135 is commonly used in automotive systems, industrial control systems, and consumer electronics.
  7. What is the significance of high DC current gain in the PBSS8110Z,135?
    A high DC current gain ensures reliable amplification and switching performance.
  8. How does the compact package of the PBSS8110Z,135 benefit its use?
    The compact package makes it suitable for use in a variety of applications where space is limited.
  9. Where can I find detailed specifications for the PBSS8110Z,135?
    Detailed specifications can be found in the datasheet available on Nexperia's official website or through authorized distributors like Mouser and Digi-Key.
  10. What is the typical use case for the PBSS8110Z,135 in power supplies?
    The PBSS8110Z,135 is typically used for switching and amplification in power supplies and DC-DC converters due to its high current handling and low V_CEsat.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 250mA, 10V
Power - Max:1.4 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number PBSS8110Z,135 PBSS9110Z,135 PBSS8110X,135
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A 320mV @ 100mA, 1A 200mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 250mA, 10V 150 @ 500mA, 5V 150 @ 250mA, 10V
Power - Max 1.4 W 1.4 W 2 W
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-243AA
Supplier Device Package SOT-223 SOT-223 SOT-89

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