PBSS5540X,135
  • Share:

Nexperia USA Inc. PBSS5540X,135

Manufacturer No:
PBSS5540X,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 4A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS5540X,135 is a PNP low VCEsat transistor manufactured by Nexperia USA Inc. This transistor is housed in a medium power SOT89 (SC-62) package, making it suitable for a variety of applications requiring high efficiency and low heat generation. It is the PNP complement to the NPN PBSS4540X transistor.

Key Specifications

ParameterValue
Transistor TypePNP
Collector-Emitter Voltage (VCE)40 V
Collector Current (IC)4 A
Collector-Emitter Saturation Voltage (VCEsat)Low VCEsat
Transition Frequency (fT)60 MHz
Power Dissipation (Ptot)1.6 W
Package TypeSOT89 (SC-62), Surface Mount

Key Features

  • Low collector-emitter saturation voltage (VCEsat)
  • High collector current capability
  • High efficiency leading to less heat generation
  • Medium power SOT89 (SC-62) package

Applications

The PBSS5540X,135 transistor is suitable for various applications requiring high current handling and low VCEsat, such as power switching, motor control, and general-purpose amplification. It is particularly useful in designs where high efficiency and minimal heat generation are critical.

Q & A

  1. What is the collector-emitter voltage (VCE) of the PBSS5540X,135 transistor?
    The collector-emitter voltage (VCE) is 40 V.
  2. What is the collector current (IC) of the PBSS5540X,135 transistor?
    The collector current (IC) is 4 A.
  3. What is the package type of the PBSS5540X,135 transistor?
    The package type is SOT89 (SC-62), surface mount.
  4. What is the transition frequency (fT) of the PBSS5540X,135 transistor?
    The transition frequency (fT) is 60 MHz.
  5. What is the power dissipation (Ptot) of the PBSS5540X,135 transistor?
    The power dissipation (Ptot) is 1.6 W.
  6. What are the key features of the PBSS5540X,135 transistor?
    The key features include low collector-emitter saturation voltage (VCEsat), high collector current capability, and high efficiency leading to less heat generation.
  7. What is the NPN complement to the PBSS5540X,135 transistor?
    The NPN complement is the PBSS4540X transistor.
  8. In what types of applications is the PBSS5540X,135 transistor commonly used?
    The transistor is commonly used in power switching, motor control, and general-purpose amplification.
  9. Why is the PBSS5540X,135 transistor preferred in certain designs?
    It is preferred due to its high efficiency and minimal heat generation.
  10. Where can I find detailed specifications for the PBSS5540X,135 transistor?
    Detailed specifications can be found on the official Nexperia website, as well as on distributor websites such as Digi-Key and Mouser Electronics.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:375mV @ 500mA, 5A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 2A, 2V
Power - Max:1.6 W
Frequency - Transition:60MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
0 Remaining View Similar

In Stock

$0.46
189

Please send RFQ , we will respond immediately.

Same Series
PBSS4540X,135
PBSS4540X,135
TRANS NPN 40V 4A SOT89

Similar Products

Part Number PBSS5540X,135 PBSS4540X,135 PBSS5520X,135
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP NPN PNP
Current - Collector (Ic) (Max) 4 A 4 A 5 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 20 V
Vce Saturation (Max) @ Ib, Ic 375mV @ 500mA, 5A 355mV @ 500mA, 5A 270mV @ 500mA, 5A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A, 2V 250 @ 2A, 2V 250 @ 2A, 2V
Power - Max 1.6 W 1.6 W 1.6 W
Frequency - Transition 60MHz 70MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89 SOT-89

Related Product By Categories

SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
TIP142T
TIP142T
STMicroelectronics
TRANS NPN DARL 100V 10A TO220
MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
BC857AMTF
BC857AMTF
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
2PD601ARL,235
2PD601ARL,235
Nexperia USA Inc.
TRANS NPN 50V 0.1A TO236AB
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
BUL128D-B
BUL128D-B
STMicroelectronics
TRANS NPN 400V 4A TO220
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
BZX79-C18,133
BZX79-C18,133
Nexperia USA Inc.
DIODE ZENER 18V 400MW ALF2
PDZ27BF
PDZ27BF
Nexperia USA Inc.
DIODE ZENER 27V 400MW SOD323
BZX84-C4V3,235
BZX84-C4V3,235
Nexperia USA Inc.
DIODE ZENER 4.3V 250MW TO236AB
BC856BS,115
BC856BS,115
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
BC847BS/ZLF
BC847BS/ZLF
Nexperia USA Inc.
GENERAL-PURPOSE TRANSISTOR
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
74HCT125DB,118
74HCT125DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14SSOP
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO