PBSS4330PA,115
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Nexperia USA Inc. PBSS4330PA,115

Manufacturer No:
PBSS4330PA,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 3A 3HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4330PA,115 is a 30 V, 3 A NPN low VCEsat (BISS) transistor manufactured by Nexperia USA Inc. This transistor is designed to offer high performance and efficiency in various electronic applications. It is part of the discrete semiconductor products category, specifically within the bipolar junction transistors (BJT) family. The PBSS4330PA,115 is known for its low collector-emitter saturation voltage and high collector current capability, making it suitable for a range of uses where power and efficiency are critical.

Key Specifications

ParameterValue
Manufacturer Part NumberPBSS4330PA,115
ManufacturerNexperia USA Inc.
CategoryDiscrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Collector-Base Voltage (Vcbo)30 V
Collector-Emitter Voltage (Vceo)30 V
Collector Current (Ic)3 A
Collector-Emitter Saturation Voltage (Vce(sat))Low VCEsat
Package TypeSOT223

Key Features

  • Low collector-emitter saturation voltage (VCEsat)
  • High collector current capability (Ic)
  • Smaller required Printed-Circuit Board (PCB) area due to compact package
  • High performance and efficiency in various electronic applications

Applications

The PBSS4330PA,115 transistor is versatile and can be used in a wide range of electronic devices and systems, including but not limited to:

  • Power management and switching circuits
  • Automotive systems
  • Industrial control systems
  • Consumer electronics such as televisions and computers
  • Medical devices requiring high reliability and efficiency

Q & A

  1. What is the collector-emitter saturation voltage of the PBSS4330PA,115 transistor?
    The PBSS4330PA,115 has a low collector-emitter saturation voltage (VCEsat).
  2. What is the maximum collector current of the PBSS4330PA,115 transistor?
    The maximum collector current (Ic) is 3 A.
  3. What type of package does the PBSS4330PA,115 transistor use?
    The transistor is packaged in SOT223.
  4. What are the typical applications of the PBSS4330PA,115 transistor?
    It is used in power management, automotive systems, industrial control systems, consumer electronics, and medical devices.
  5. Who is the manufacturer of the PBSS4330PA,115 transistor?
    The manufacturer is Nexperia USA Inc..
  6. What is the category of the PBSS4330PA,115 transistor?
    It falls under Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single.
  7. What is the collector-base voltage (Vcbo) of the PBSS4330PA,115 transistor?
    The collector-base voltage (Vcbo) is 30 V.
  8. How does the PBSS4330PA,115 transistor contribute to PCB design?
    It requires a smaller PCB area due to its compact package.
  9. Is the PBSS4330PA,115 transistor suitable for high-power applications?
    Yes, it is suitable for high-power applications due to its high collector current capability and low VCEsat.
  10. Where can I purchase the PBSS4330PA,115 transistor?
    You can purchase it from various distributors such as DigiKey, Mouser Electronics, and Arrow Electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 1A, 2V
Power - Max:2.1 W
Frequency - Transition:210MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-PowerUDFN
Supplier Device Package:3-HUSON (2x2)
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Similar Products

Part Number PBSS4330PA,115 PBSS5330PA,115 PBSS4630PA,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 3 A 3 A 6 A
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A 320mV @ 300mA, 3A 275mV @ 300mA, 6A
Current - Collector Cutoff (Max) 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 1A, 2V 175 @ 1A, 2V 260 @ 2A, 2V
Power - Max 2.1 W 2.1 W 2.1 W
Frequency - Transition 210MHz 165MHz 115MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 3-PowerUDFN 3-PowerUDFN 3-PowerUDFN
Supplier Device Package 3-HUSON (2x2) 3-HUSON (2x2) 3-HUSON (2x2)

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