Overview
The PBSS4140DPN/DG/B2,115 is a 40 V low VCEsat NPN/PNP transistor pair produced by Nexperia USA Inc. This component is packaged in an SC-74 (SOT457) plastic package and is designed for various general-purpose switching and muting applications. It is known for its high current capability, low collector-emitter saturation voltage, and improved device reliability due to reduced heat generation.
Key Specifications
| Parameter | Symbol | Max. Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | V |
| Peak Collector Current | ICM | 2 | A |
| Collector Current (DC) | IC | 1 | A |
| Total Power Dissipation | Ptot | 600 | mW |
| Storage Temperature | Tstg | -65 to +150 | °C |
| Junction Temperature | Tj | -150 | °C |
| Collector-Emitter Saturation Voltage | VCEsat | < 500 mΩ | mΩ |
| DC Current Gain | hFE | 300 - 900 | - |
Key Features
- Low collector-emitter saturation voltage (VCEsat)
- High current capability up to 1 A (DC) and 2 A (peak)
- Improved device reliability due to reduced heat generation
- Replaces two SOT23 packaged low VCEsat transistors on the same PCB area, reducing required PCB area and pick and place costs
- Total power dissipation of 600 mW
- High DC current gain (hFE) ranging from 300 to 900
Applications
- General purpose switching and muting
- LCD backlighting
- Supply line switching circuits
- Battery-driven equipment such as mobile phones, video cameras, and hand-held devices
Q & A
- What is the maximum collector-emitter voltage of the PBSS4140DPN?
The maximum collector-emitter voltage (VCEO) is 40 V.
- What is the total power dissipation of the PBSS4140DPN?
The total power dissipation (Ptot) is 600 mW.
- What is the package type of the PBSS4140DPN?
The component is packaged in an SC-74 (SOT457) plastic package.
- What are the key features of the PBSS4140DPN?
Key features include low VCEsat, high current capability, improved reliability, and reduced PCB area requirements.
- What are some common applications of the PBSS4140DPN?
Common applications include general purpose switching, LCD backlighting, supply line switching circuits, and battery-driven equipment.
- What is the maximum junction temperature for the PBSS4140DPN?
The maximum junction temperature (Tj) is 150 °C.
- Is the PBSS4140DPN RoHS compliant?
- What is the DC current gain range of the PBSS4140DPN?
The DC current gain (hFE) ranges from 300 to 900.
- How does the PBSS4140DPN reduce PCB area?
The PBSS4140DPN replaces two SOT23 packaged low VCEsat transistors on the same PCB area, thus reducing the required PCB area and pick and place costs.[
- What is the thermal resistance from junction to ambient for the PBSS4140DPN?
The thermal resistance from junction to ambient (Rth j-a) is 208 K/W.[
