Overview
The BCX54-10,115 is a medium power NPN bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is part of the BCX54 series and is packaged in a surface-mount SOT-89 package. It is designed for high current and high power dissipation applications, making it suitable for a variety of electronic systems.
Key Specifications
Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|
VCEO (Collector-Emitter Voltage) | Open base | - | - | 45 | V |
IC (Collector Current) | - | - | - | 1 | A |
ICM (Peak Collector Current) | Single pulse; tp ≤ 1 ms | - | - | 2 | A |
hFE (DC Current Gain) | VCE = 2 V; IC = 150 mA | 63 | - | 250 | - |
VEBO (Emitter-Base Voltage) | Open collector | - | - | 5 | V |
Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 1.35 | W |
Tj (Junction Temperature) | - | - | - | 150 | °C |
Tamb (Ambient Temperature) | - | -55 | - | 150 | °C |
fT (Transition Frequency) | VCE = 5 V; IC = 50 mA; f = 100 MHz | 100 | - | 180 | MHz |
Key Features
- High current capability up to 1 A
- High power dissipation capability up to 1.35 W
- Exposed heatsink for excellent thermal and electrical conductivity in SOT-89 package
- Three current gain selections (hFE)
- AEC-Q101 qualified for automotive applications
- Low collector-emitter saturation voltage (VCEsat)
- Small form factor using about 75% less board space, allowing more design flexibility
Applications
- Linear voltage regulators
- Power management
- Low-side switches
- MOSFET drivers
- Battery-driven devices
- Amplifiers
Q & A
- What is the collector-emitter voltage (VCEO) of the BCX54-10,115 transistor?
The collector-emitter voltage (VCEO) is up to 45 V.
- What is the maximum collector current (IC) of the BCX54-10,115 transistor?
The maximum collector current (IC) is 1 A.
- What is the peak collector current (ICM) of the BCX54-10,115 transistor?
The peak collector current (ICM) is up to 2 A for single pulses with tp ≤ 1 ms.
- What are the DC current gain (hFE) ranges for the BCX54-10,115 transistor?
The DC current gain (hFE) ranges from 63 to 250 at VCE = 2 V and IC = 150 mA.
- What is the total power dissipation (Ptot) of the BCX54-10,115 transistor?
The total power dissipation (Ptot) is up to 1.35 W at Tamb ≤ 25 °C.
- What is the junction temperature (Tj) limit of the BCX54-10,115 transistor?
The junction temperature (Tj) limit is 150 °C.
- What are the typical applications of the BCX54-10,115 transistor?
Typical applications include linear voltage regulators, power management, low-side switches, MOSFET drivers, battery-driven devices, and amplifiers.
- Is the BCX54-10,115 transistor AEC-Q101 qualified?
Yes, the BCX54-10,115 transistor is AEC-Q101 qualified for automotive applications.
- What is the transition frequency (fT) of the BCX54-10,115 transistor?
The transition frequency (fT) is up to 180 MHz at VCE = 5 V and IC = 50 mA.
- What is the package type of the BCX54-10,115 transistor?
The BCX54-10,115 transistor is packaged in a surface-mount SOT-89 package.