BCX52-10,115
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Nexperia USA Inc. BCX52-10,115

Manufacturer No:
BCX52-10,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX52-10,115 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for a wide range of applications requiring high current and voltage handling capabilities. It features a small form factor, specifically the SOT-89 package, which reduces board space and enhances design flexibility. The BCX52-10,115 is known for its low collector-emitter saturation voltage and high collector current capability, making it suitable for various electronic circuits.

Key Specifications

ParameterValue
Transistor TypePNP
Maximum DC Collector Current-1 A
Maximum Collector-Emitter Voltage-60 V
Package TypeSOT-89
Maximum Operating Frequency145 MHz
Maximum Power Dissipation1.35 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Base-Emitter Voltage (max)-5 V
Dimensions4.6 x 2.6 x 1.6 mm

Key Features

  • High collector current capability of -1 A.
  • Low collector-emitter saturation voltage.
  • High maximum operating frequency of 145 MHz.
  • Compact SOT-89 package, reducing board space by approximately 75%.
  • Wide operating temperature range from -55°C to +150°C.
  • High power dissipation of up to 1.35 W.

Applications

The BCX52-10,115 PNP transistor is versatile and can be used in a variety of applications, including:

  • Amplifier circuits requiring high current and low saturation voltage.
  • Switching circuits where high frequency and low power dissipation are crucial.
  • Automotive and industrial control systems.
  • Audio and power amplifiers.
  • General-purpose electronic circuits where reliability and performance are essential.

Q & A

  1. What is the maximum DC collector current of the BCX52-10,115 transistor?
    The maximum DC collector current is -1 A.
  2. What is the maximum collector-emitter voltage of the BCX52-10,115 transistor?
    The maximum collector-emitter voltage is -60 V.
  3. What package type does the BCX52-10,115 transistor use?
    The transistor uses the SOT-89 package.
  4. What is the maximum operating frequency of the BCX52-10,115 transistor?
    The maximum operating frequency is 145 MHz.
  5. What is the maximum power dissipation of the BCX52-10,115 transistor?
    The maximum power dissipation is 1.35 W.
  6. What are the operating temperature limits for the BCX52-10,115 transistor?
    The operating temperature range is from -55°C to +150°C.
  7. What are the dimensions of the BCX52-10,115 transistor in the SOT-89 package?
    The dimensions are 4.6 x 2.6 x 1.6 mm.
  8. What are some common applications for the BCX52-10,115 transistor?
    Common applications include amplifier circuits, switching circuits, automotive and industrial control systems, audio and power amplifiers, and general-purpose electronic circuits.
  9. Why is the SOT-89 package beneficial for the BCX52-10,115 transistor?
    The SOT-89 package reduces board space by approximately 75%, enhancing design flexibility.
  10. What is the base-emitter voltage maximum for the BCX52-10,115 transistor?
    The base-emitter voltage maximum is -5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.3 W
Frequency - Transition:145MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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Similar Products

Part Number BCX52-10,115 BCX55-10,115 BCX53-10,115 BCX52-16,115 BCX54-10,115 BCX51-10,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type PNP NPN PNP PNP NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 80 V 60 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.3 W 1.25 W 1.3 W 1.3 W 1.25 W 1.3 W
Frequency - Transition 145MHz 180MHz 145MHz 145MHz 180MHz 145MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89

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