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BCX52-16,115
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Nexperia USA Inc. BCX52-16,115

Manufacturer No:
BCX52-16,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The BCX52-16,115 is a PNP medium power transistor manufactured by Nexperia USA Inc. This transistor is part of the BCX52 series and is housed in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. It is designed to offer high current handling, multiple current gain selections, and high power dissipation capability, making it suitable for a variety of applications. The transistor features an exposed heatsink for excellent thermal and electrical conductivity and is AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments.

Key Specifications

ParameterValue
Type numberBCX52-16
PackageSOT89 (SC-62)
Package size (mm)4.5 x 2.5 x 1.5
Channel typePNP
Total power dissipation (Ptot)500 mW
Maximum collector-emitter voltage (VCEO)-60 V
Maximum collector current (IC)-1000 mA
Minimum current gain (hFE)100
Maximum current gain (hFE)250
Maximum junction temperature (TJ)150 °C
Automotive qualifiedYes (AEC-Q101)

Key Features

  • High current handling: Capable of handling up to 1 A of collector current.
  • Multiple current gain selections: Offers a range of current gain options from 100 to 250.
  • High power dissipation capability: Total power dissipation of 500 mW.
  • Exposed heatsink: Enhances thermal and electrical conductivity.
  • AEC-Q101 qualified: Ensures reliability and performance in automotive and other demanding applications.

Applications

  • Linear voltage regulators
  • High-side switches
  • Battery-driven devices
  • Power management
  • MOSFET drivers
  • Amplifiers

Q & A

  1. What is the maximum collector-emitter voltage of the BCX52-16,115 transistor?
    The maximum collector-emitter voltage (VCEO) is -60 V.
  2. What is the maximum collector current of the BCX52-16,115 transistor?
    The maximum collector current (IC) is -1000 mA.
  3. What is the package type of the BCX52-16,115 transistor?
    The transistor is housed in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
  4. Is the BCX52-16,115 transistor AEC-Q101 qualified?
    Yes, the BCX52-16,115 transistor is AEC-Q101 qualified.
  5. What is the total power dissipation capability of the BCX52-16,115 transistor?
    The total power dissipation (Ptot) is 500 mW.
  6. What are the typical applications of the BCX52-16,115 transistor?
    Typical applications include linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers.
  7. What is the maximum junction temperature of the BCX52-16,115 transistor?
    The maximum junction temperature (TJ) is 150 °C.
  8. How many current gain selections are available for the BCX52-16,115 transistor?
    There are three current gain selections available, ranging from 100 to 250.
  9. What is the moisture sensitivity level (MSL) of the BCX52-16,115 transistor?
    The moisture sensitivity level (MSL) is 1 (unlimited).
  10. How can I obtain samples of the BCX52-16,115 transistor?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1.3 W
Frequency - Transition:145MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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Similar Products

Part Number BCX52-16,115 BCX53-16,115 BCX52-16,135 BCX55-16,115 BCX54-16,115 BCX51-16,115 BCX52-10,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active
Transistor Type PNP PNP PNP NPN NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 60 V 45 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.3 W 1.3 W 1.3 W 1.25 W 1.25 W 1.3 W 1.3 W
Frequency - Transition 145MHz 145MHz 145MHz 180MHz 180MHz 145MHz 145MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89

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