BC857BW-QF
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Nexperia USA Inc. BC857BW-QF

Manufacturer No:
BC857BW-QF
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BW-QF is a 65 V, 100 mA PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, making it ideal for space-constrained applications. It is part of Nexperia’s extensive portfolio of bipolar transistors, which are widely used in various electronic designs across different industries.

Key Specifications

ParameterConditionsMinTypMaxUnit
Collector-Base Voltage (VCBO)---50V
Collector-Emitter Voltage (VCEO)---45V
Emitter-Base Voltage (VEBO)---5V
Collector Current (IC)--100mA
Peak Collector Current (ICM)--200mA
DC Current Gain (hFE)VCE = 5 V; IC = 2 mA220-475-
Total Power Dissipation (Ptot)Tamb ≤ 25 °C--200mW
Junction Temperature (Tj)--150°C
Ambient Temperature (Tamb)--65-150°C

Key Features

  • Low current capability (max. 100 mA)
  • Low voltage capability (max. 65 V)
  • Qualified according to AEC-Q101, making it suitable for automotive applications
  • General-purpose switching and amplification
  • Compact SOT323 (SC-70) package for space-efficient designs

Applications

The BC857BW-QF transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is recommended for use in automotive applications.
  • Industrial electronics: Suitable for general-purpose switching and amplification in industrial settings.
  • Consumer electronics: Can be used in mobile, consumer, and wearable devices.
  • Power and computing: Applicable in power management and computing systems.

Q & A

  1. What is the maximum collector current of the BC857BW-QF transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum collector-emitter voltage of the BC857BW-QF transistor?
    The maximum collector-emitter voltage is 45 V.
  3. What package type is the BC857BW-QF transistor available in?
    The transistor is available in the SOT323 (SC-70) package.
  4. Is the BC857BW-QF transistor suitable for automotive applications?
    Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.
  5. What is the maximum junction temperature for the BC857BW-QF transistor?
    The maximum junction temperature is 150 °C.
  6. What is the total power dissipation of the BC857BW-QF transistor at ambient temperatures up to 25 °C?
    The total power dissipation is 200 mW.
  7. What is the DC current gain (hFE) of the BC857BW-QF transistor?
    The DC current gain (hFE) ranges from 220 to 475 at VCE = 5 V and IC = 2 mA.
  8. Can the BC857BW-QF transistor be used for general-purpose switching and amplification?
    Yes, it is suitable for general-purpose switching and amplification.
  9. What are the dimensions of the SOT323 package for the BC857BW-QF transistor?
    The dimensions are 2 x 1.25 x 0.95 mm.
  10. Is the BC857BW-QF transistor RoHS compliant?
    Yes, the BC857BW-QF transistor is RoHS compliant.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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