BC857AQB-QZ
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Nexperia USA Inc. BC857AQB-QZ

Manufacturer No:
BC857AQB-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
SMALL SIGNAL BIPOLAR IN DFN PACK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857AQB-QZ is a high-performance PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BC857 series and is designed to meet the stringent requirements of automotive and industrial applications. It is qualified according to the AEC-Q101 standard, ensuring reliability and performance in harsh environments.

The BC857AQB-QZ features a small footprint, making it ideal for space-restricted applications, and it is suitable for automatic optical inspection (AOI) of solder joints. Its high power dissipation capability and low package height of 0.5 mm add to its versatility and efficiency in various electronic designs.

Key Specifications

Parameter Value
Type Number BC857AQB-Q
Orderable Part Number BC857AQB-QZ
Package DFN1110D-3 (SOT8015)
Polarity PNP
Power - Max 340 mW
Mounting Type Surface Mount, Wettable Flank
Operating Temperature 150°C (TJ)
Frequency - Transition 100 MHz
Vce Saturation (Max) @ Ib, Ic 650 mV @ 5 mA, 100 mA
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 15 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2 mA, 5 V
Voltage - Collector Emitter Breakdown (Max) 45 V

Key Features

  • High-temperature performance ensured, with an operating temperature up to 150°C (TJ).
  • Suitable for extreme environments, qualified according to the AEC-Q101 standard for automotive applications.
  • Low electromagnetic interference, enhancing signal clarity and reliability.
  • Durable and long-lasting operation, with high power dissipation capability.
  • Small footprint, ideal for space-restricted applications, and suitable for automatic optical inspection (AOI) of solder joints.
  • Low package height of 0.5 mm, adding to its versatility in various electronic designs).

Applications

  • Reliable operation in harsh conditions, making it suitable for automotive and industrial applications.
  • Perfect for small devices due to its compact size and low profile).
  • General-purpose switching and amplification in various electronic circuits).
  • Use in power, computing, consumer, mobile, and wearable devices due to its high performance and reliability).

Q & A

  1. What is the BC857AQB-QZ transistor used for?

    The BC857AQB-QZ is a general-purpose PNP bipolar transistor used for switching and amplification in various electronic circuits, particularly in automotive and industrial applications.

  2. What is the maximum operating temperature of the BC857AQB-QZ?

    The maximum operating temperature (TJ) of the BC857AQB-QZ is 150°C.

  3. What is the package type of the BC857AQB-QZ?

    The BC857AQB-QZ comes in a DFN1110D-3 (SOT8015) package.

  4. Is the BC857AQB-QZ suitable for automotive applications?

    Yes, the BC857AQB-QZ is qualified according to the AEC-Q101 standard, making it suitable for automotive applications.

  5. What is the maximum collector current of the BC857AQB-QZ?

    The maximum collector current (Ic) of the BC857AQB-QZ is 100 mA.

  6. What is the voltage - collector emitter breakdown (Vceo) of the BC857AQB-QZ?

    The voltage - collector emitter breakdown (Vceo) of the BC857AQB-QZ is 45 V.

  7. Does the BC857AQB-QZ have low electromagnetic interference?

    Yes, the BC857AQB-QZ is designed to have low electromagnetic interference, enhancing signal clarity and reliability.

  8. Is the BC857AQB-QZ suitable for small devices?

    Yes, the BC857AQB-QZ is ideal for small devices due to its compact size and low profile.

  9. What is the DC current gain (hFE) of the BC857AQB-QZ?

    The DC current gain (hFE) of the BC857AQB-QZ is a minimum of 125 at 2 mA and 5 V.

  10. Can the BC857AQB-QZ be used in high-temperature environments?

    Yes, the BC857AQB-QZ is designed for high-temperature performance, ensuring reliable operation in harsh conditions.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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