BC857A-QR
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Nexperia USA Inc. BC857A-QR

Manufacturer No:
BC857A-QR
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS PNP 45V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857A-QR is a PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited. The BC857A-QR is part of Nexperia’s extensive portfolio of bipolar transistors, which are known for their reliability and performance in various electronic designs.

Key Specifications

Parameter Value
Type Number BC857A-Q
Package SOT23 (TO-236AB)
Channel Type PNP
VCEO [max] 65 V
IC [max] 100 mA
hFE [min] 125
hFE [max] 800
TJ [max] 150°C
fT [min] 100 MHz
Automotive Qualified Yes (AEC-Q101)

Key Features

  • Compact Package: The BC857A-QR is packaged in a small SOT23 (TO-236AB) package, making it ideal for space-constrained designs.
  • General-Purpose Use: Suitable for both switching and amplification applications.
  • Low Current and Voltage: Maximum collector current of 100 mA and maximum collector-emitter voltage of 65 V.
  • High Current Gain: Minimum current gain (hFE) of 125 and maximum of 800.
  • Automotive Qualification: Qualified according to AEC-Q101, making it suitable for use in automotive applications.

Applications

The BC857A-QR transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive: Qualified for automotive use, it can be employed in vehicle electronics, such as in sensors, actuators, and control systems.
  • Industrial: Suitable for industrial control systems, motor control, and power management.
  • Consumer Electronics: Used in audio amplifiers, switching circuits, and other consumer electronic devices.
  • Mobile and Wearables: Due to its small package size, it is also suitable for mobile devices and wearable electronics.

Q & A

  1. What is the package type of the BC857A-QR transistor?

    The BC857A-QR transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  2. What is the maximum collector current of the BC857A-QR?

    The maximum collector current (IC) of the BC857A-QR is 100 mA.

  3. What is the maximum collector-emitter voltage of the BC857A-QR?

    The maximum collector-emitter voltage (VCEO) of the BC857A-QR is 65 V.

  4. Is the BC857A-QR qualified for automotive applications?

    Yes, the BC857A-QR is qualified according to AEC-Q101 and is recommended for use in automotive applications.

  5. What is the typical application of the BC857A-QR transistor?

    The BC857A-QR transistor is used for general-purpose switching and amplification.

  6. What is the minimum current gain (hFE) of the BC857A-QR?

    The minimum current gain (hFE) of the BC857A-QR is 125.

  7. What is the maximum junction temperature of the BC857A-QR?

    The maximum junction temperature (TJ) of the BC857A-QR is 150°C.

  8. Can the BC857A-QR be used in consumer electronics?

    Yes, the BC857A-QR can be used in consumer electronics such as audio amplifiers and switching circuits.

  9. How can I obtain samples of the BC857A-QR?

    Samples of the BC857A-QR can be obtained through Nexperia’s sales organization or through their network of global and regional distributors.

  10. What is the minimum frequency (fT) of the BC857A-QR?

    The minimum frequency (fT) of the BC857A-QR is 100 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number BC857A-QR BC857B-QR BC857-QR
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 250 mW 250 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB

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