BC856SHF
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Nexperia USA Inc. BC856SHF

Manufacturer No:
BC856SHF
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BC856SHF
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BC856SH-QF, produced by Nexperia USA Inc., is a PNP/PNP general-purpose double transistor array packaged in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. This component is designed for high-temperature applications and is qualified according to AEC-Q101, making it suitable for automotive and other demanding environments. The BC856SH-QF is the PNP complement to the NPN/NPN BC846SH-Q, offering a compact solution for various electronic designs.

Key Specifications

ParameterValue
Product StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)65 V
Vce Saturation (Max) @ Ib, Ic300 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max)15 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2 mA, 5 V
Power - Max270 mW
Frequency - Transition100 MHz
Operating Temperature175 °C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeSurface Mount
Package / CaseTSSOP-6
Supplier Device Package6-TSSOP
Base Product NumberBC856
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
RoHSCompliant
Mounting StyleSMD/SMT
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO65 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current100 mA
Pd - Power Dissipation400 mW
Gain Bandwidth Product fT100 MHz
Minimum Operating Temperature-65 °C
Maximum Operating Temperature+150 °C

Key Features

  • Low collector capacitance
  • Low collector-emitter saturation voltage
  • Closely matched current gain
  • Reduces number of components and board space
  • No mutual interference between the transistors
  • High-temperature applications up to 175 °C
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

The BC856SH-QF is suitable for general-purpose switching and amplification. Its automotive qualification (AEC-Q101) makes it particularly useful in automotive applications. Additionally, its high-temperature tolerance and compact packaging make it a versatile component for various industrial, consumer, and mobile electronic designs.

Q & A

  1. What is the maximum collector current of the BC856SH-QF?
    The maximum collector current is 100 mA.
  2. What is the operating temperature range of the BC856SH-QF?
    The operating temperature range is from -65 °C to +150 °C (TJ up to 175 °C).
  3. Is the BC856SH-QF RoHS compliant?
    Yes, the BC856SH-QF is RoHS compliant.
  4. What is the package type of the BC856SH-QF?
    The package type is TSSOP-6 (6-TSSOP).
  5. What is the DC current gain (hFE) of the BC856SH-QF?
    The DC current gain (hFE) is a minimum of 110 at 2 mA and 5 V.
  6. Is the BC856SH-QF suitable for automotive applications?
    Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.
  7. What is the collector-emitter saturation voltage of the BC856SH-QF?
    The collector-emitter saturation voltage is 100 mV.
  8. What is the gain bandwidth product (fT) of the BC856SH-QF?
    The gain bandwidth product (fT) is 100 MHz.
  9. Does the BC856SH-QF have any mutual interference between the transistors?
    No, there is no mutual interference between the transistors.
  10. What is the power dissipation (Pd) of the BC856SH-QF?
    The power dissipation (Pd) is 400 mW.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:270mW
Frequency - Transition:100MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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