BC847CQC-QZ
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Nexperia USA Inc. BC847CQC-QZ

Manufacturer No:
BC847CQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CQC-QZ is a 45 V, 100 mA NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is housed in an ultra-small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. It is designed for high power dissipation and is suitable for various applications, including general-purpose switching and amplification, particularly in space-restricted environments.

Key Specifications

Type numberPackage versionPackage nameSize (mm)Channel typePtot (mW)VCEO [max] (V)IC [max] (mA)hFE [min]hFE [max]fT [min] (MHz)Automotive qualified
BC847CQC-QSOT8009DFN1412D-31.4 x 1.2 x 0.48NPN360.045.0100.0420.0800.0100.0Yes

Key Features

  • High power dissipation capability
  • Suitable for Automatic Optical Inspection (AOI) of solder joint
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.5 mm
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • General-purpose switching and amplification
  • Space restricted applications

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC847CQC-QZ transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the maximum collector current (IC) of the BC847CQC-QZ transistor?
    The maximum collector current (IC) is 100 mA.
  3. What is the package type of the BC847CQC-QZ transistor?
    The package type is DFN1412D-3 (SOT8009), a leadless SMD plastic package with side-wettable flanks.
  4. Is the BC847CQC-QZ transistor suitable for automotive applications?
    Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.
  5. What are the dimensions of the BC847CQC-QZ transistor package?
    The package dimensions are 1.4 mm x 1.2 mm x 0.48 mm.
  6. What is the minimum current gain (hFE) of the BC847CQC-QZ transistor?
    The minimum current gain (hFE) is 420.
  7. What is the maximum current gain (hFE) of the BC847CQC-QZ transistor?
    The maximum current gain (hFE) is 800.
  8. What is the minimum transition frequency (fT) of the BC847CQC-QZ transistor?
    The minimum transition frequency (fT) is 100 MHz.
  9. Is the BC847CQC-QZ transistor suitable for Automatic Optical Inspection (AOI) of solder joints?
    Yes, it is suitable for AOI of solder joints.
  10. What is the total power dissipation (Ptot) of the BC847CQC-QZ transistor?
    The total power dissipation (Ptot) is 360 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC847CQC-QZ BC847BQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

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