BC847BQC-QZ
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Nexperia USA Inc. BC847BQC-QZ

Manufacturer No:
BC847BQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BQC-QZ is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for general-purpose amplification and switching applications. It features a compact DFN1412D-3 package, making it suitable for space-constrained designs. The BC847BQC-QZ is known for its high reliability and robust performance, making it a popular choice in various electronic systems.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Emitter Voltage (Vce)45 V
Collector Current (Ic)100 mA
Transition Frequency (ft)100 MHz
Power Dissipation (Pd)360 mW
Package TypeDFN1412D-3 (Wettable Flank)
Rohs StatusLead-free

Key Features

  • High collector current of 100 mA
  • High transition frequency of 100 MHz
  • Compact DFN1412D-3 package with wettable flanks for improved solderability
  • Lead-free and RoHS compliant
  • High reliability and robust performance

Applications

The BC847BQC-QZ transistor is versatile and can be used in a variety of applications, including:

  • General-purpose amplification
  • Switching circuits
  • AUDIO and video amplifiers
  • Automotive electronics
  • Industrial control systems

Q & A

  1. What is the collector-emitter voltage of the BC847BQC-QZ transistor?
    The collector-emitter voltage (Vce) of the BC847BQC-QZ transistor is 45 V.
  2. What is the maximum collector current of the BC847BQC-QZ transistor?
    The maximum collector current (Ic) of the BC847BQC-QZ transistor is 100 mA.
  3. What is the transition frequency of the BC847BQC-QZ transistor?
    The transition frequency (ft) of the BC847BQC-QZ transistor is 100 MHz.
  4. What type of package does the BC847BQC-QZ transistor use?
    The BC847BQC-QZ transistor uses a DFN1412D-3 package with wettable flanks.
  5. Is the BC847BQC-QZ transistor RoHS compliant?
    Yes, the BC847BQC-QZ transistor is lead-free and RoHS compliant.
  6. What are some common applications of the BC847BQC-QZ transistor?
    The BC847BQC-QZ transistor is commonly used in general-purpose amplification, switching circuits, audio and video amplifiers, automotive electronics, and industrial control systems.
  7. What is the power dissipation of the BC847BQC-QZ transistor?
    The power dissipation (Pd) of the BC847BQC-QZ transistor is 360 mW.
  8. Who is the manufacturer of the BC847BQC-QZ transistor?
    The BC847BQC-QZ transistor is manufactured by Nexperia USA Inc.
  9. What is the significance of the 'QZ' suffix in the part number BC847BQC-QZ?
    The 'QZ' suffix indicates that the transistor is qualified for specific reliability and performance standards, often related to automotive or industrial applications.
  10. How does the compact package of the BC847BQC-QZ benefit design engineers?
    The compact DFN1412D-3 package of the BC847BQC-QZ transistor allows for more efficient use of PCB space, making it ideal for space-constrained designs.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC847BQC-QZ BC847CQC-QZ BC847AQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 360 mW 360 mW 360 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3 DFN1412D-3

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