BC847AQC-QZ
  • Share:

Nexperia USA Inc. BC847AQC-QZ

Manufacturer No:
BC847AQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847AQC-QZ is a single Bipolar Junction Transistor (BJT) manufactured by Nexperia USA Inc. This component is part of Nexperia's extensive range of discrete semiconductor products, known for their reliability and performance in various electronic applications. The BC847AQC-QZ is designed to meet the demands of modern electronics, offering high DC collector/base gain and robust operating characteristics.

Key Specifications

ParameterValue
Part NumberBC847AQC-QZ
Transistor TypeSingle BJT (Bipolar Junction Transistor)
Power Dissipation (Pd)450 mW
Maximum Operating Temperature+150°C
DC Collector/Base Gain (hfe) Min100 (at Vce = 5V, Ic = 2mA)

Key Features

  • High DC Collector/Base Gain (hfe): Ensures reliable and efficient operation in amplifier and switching applications.
  • Robust Operating Temperature Range: Capable of operating up to +150°C, making it suitable for a wide range of environments.
  • Compact Packaging: The component is available in a compact package, which is ideal for space-constrained designs.
  • High Power Dissipation: With a power dissipation of 450 mW, it can handle moderate power requirements effectively.

Applications

The BC847AQC-QZ is versatile and can be used in various electronic applications, including:

  • Amplifier Circuits: Due to its high DC collector/base gain, it is suitable for use in amplifier circuits.
  • Switching Circuits: Its robust operating characteristics make it a good choice for switching applications.
  • General Purpose Electronics: It can be used in a variety of general-purpose electronic circuits where a reliable BJT is required.
  • Automotive and Industrial Electronics: Given its temperature range and power handling, it can also be used in automotive and industrial electronic systems.

Q & A

  1. What is the part number of this BJT transistor?
    The part number of this BJT transistor is BC847AQC-QZ.
  2. Who is the manufacturer of the BC847AQC-QZ?
    The BC847AQC-QZ is manufactured by Nexperia USA Inc.
  3. What is the maximum operating temperature of the BC847AQC-QZ?
    The maximum operating temperature is +150°C.
  4. What is the power dissipation of the BC847AQC-QZ?
    The power dissipation is 450 mW.
  5. What is the minimum DC collector/base gain (hfe) of the BC847AQC-QZ?
    The minimum DC collector/base gain (hfe) is 100 at Vce = 5V, Ic = 2mA.
  6. In what types of applications can the BC847AQC-QZ be used?
    The BC847AQC-QZ can be used in amplifier circuits, switching circuits, general-purpose electronics, and automotive and industrial electronic systems.
  7. Where can I purchase the BC847AQC-QZ?
    The BC847AQC-QZ can be purchased from various distributors such as Digi-Key, Mouser Electronics, and Avnet.
  8. What are the key features of the BC847AQC-QZ?
    The key features include high DC collector/base gain, robust operating temperature range, compact packaging, and high power dissipation.
  9. Is the BC847AQC-QZ suitable for high-temperature environments?
    Yes, it is suitable for high-temperature environments up to +150°C.
  10. Can the BC847AQC-QZ be used in automotive applications?
    Yes, it can be used in automotive applications due to its robust operating characteristics and temperature range.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
0 Remaining View Similar

In Stock

$0.27
411

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC847AQC-QZ BC847BQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

Related Product By Categories

PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BUF420AW
BUF420AW
STMicroelectronics
TRANS NPN 450V 30A TO247-3
BCV46QTA
BCV46QTA
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223

Related Product By Brand

PESD2CANFD24V-TR
PESD2CANFD24V-TR
Nexperia USA Inc.
TVS DIODE 24VWM 42VC TO236AB
BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
BZX84-B9V1/DG/B4R
BZX84-B9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.1V 250MW TO236AB
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74HCT4851PW,118
74HCT4851PW,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH SELECT 16TSSOP
74LVC00AD-Q100J
74LVC00AD-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14SO
74HCT14D-Q100,118
74HCT14D-Q100,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
74LVC373ADB112
74LVC373ADB112
Nexperia USA Inc.
NOW NEXPERIA 74LVC373ADB - BUS D
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR