BC847AQC-QZ
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Nexperia USA Inc. BC847AQC-QZ

Manufacturer No:
BC847AQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847AQC-QZ is a single Bipolar Junction Transistor (BJT) manufactured by Nexperia USA Inc. This component is part of Nexperia's extensive range of discrete semiconductor products, known for their reliability and performance in various electronic applications. The BC847AQC-QZ is designed to meet the demands of modern electronics, offering high DC collector/base gain and robust operating characteristics.

Key Specifications

ParameterValue
Part NumberBC847AQC-QZ
Transistor TypeSingle BJT (Bipolar Junction Transistor)
Power Dissipation (Pd)450 mW
Maximum Operating Temperature+150°C
DC Collector/Base Gain (hfe) Min100 (at Vce = 5V, Ic = 2mA)

Key Features

  • High DC Collector/Base Gain (hfe): Ensures reliable and efficient operation in amplifier and switching applications.
  • Robust Operating Temperature Range: Capable of operating up to +150°C, making it suitable for a wide range of environments.
  • Compact Packaging: The component is available in a compact package, which is ideal for space-constrained designs.
  • High Power Dissipation: With a power dissipation of 450 mW, it can handle moderate power requirements effectively.

Applications

The BC847AQC-QZ is versatile and can be used in various electronic applications, including:

  • Amplifier Circuits: Due to its high DC collector/base gain, it is suitable for use in amplifier circuits.
  • Switching Circuits: Its robust operating characteristics make it a good choice for switching applications.
  • General Purpose Electronics: It can be used in a variety of general-purpose electronic circuits where a reliable BJT is required.
  • Automotive and Industrial Electronics: Given its temperature range and power handling, it can also be used in automotive and industrial electronic systems.

Q & A

  1. What is the part number of this BJT transistor?
    The part number of this BJT transistor is BC847AQC-QZ.
  2. Who is the manufacturer of the BC847AQC-QZ?
    The BC847AQC-QZ is manufactured by Nexperia USA Inc.
  3. What is the maximum operating temperature of the BC847AQC-QZ?
    The maximum operating temperature is +150°C.
  4. What is the power dissipation of the BC847AQC-QZ?
    The power dissipation is 450 mW.
  5. What is the minimum DC collector/base gain (hfe) of the BC847AQC-QZ?
    The minimum DC collector/base gain (hfe) is 100 at Vce = 5V, Ic = 2mA.
  6. In what types of applications can the BC847AQC-QZ be used?
    The BC847AQC-QZ can be used in amplifier circuits, switching circuits, general-purpose electronics, and automotive and industrial electronic systems.
  7. Where can I purchase the BC847AQC-QZ?
    The BC847AQC-QZ can be purchased from various distributors such as Digi-Key, Mouser Electronics, and Avnet.
  8. What are the key features of the BC847AQC-QZ?
    The key features include high DC collector/base gain, robust operating temperature range, compact packaging, and high power dissipation.
  9. Is the BC847AQC-QZ suitable for high-temperature environments?
    Yes, it is suitable for high-temperature environments up to +150°C.
  10. Can the BC847AQC-QZ be used in automotive applications?
    Yes, it can be used in automotive applications due to its robust operating characteristics and temperature range.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC847AQC-QZ BC847BQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

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