BC846BQC-QZ
  • Share:

Nexperia USA Inc. BC846BQC-QZ

Manufacturer No:
BC846BQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 65V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BQC-QZ is a high-performance NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is designed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it ideal for compact and efficient electronic designs. It is qualified according to AEC-Q101, which recommends it for use in automotive applications. The BC846BQC-QZ is part of Nexperia’s extensive portfolio of bipolar transistors, known for their reliability, robustness, and high efficiency.

Key Specifications

Specification Value
Type Number BC846BQC-QZ
Package SOT23 (TO-236AB)
Polarity NPN
Collector-Emitter Voltage (VCEO) [max] 65 V
Collector-Base Voltage (VCBO) [max] 80 V
Emitter-Base Voltage (VEBO) [max] 6 V
Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 100 mA
Power Dissipation (Pd) 200 mW
Gain Bandwidth Product (fT) 150 MHz
Minimum Operating Temperature -65°C
Maximum Operating Temperature +150°C
Automotive Qualified Yes (AEC-Q101)
RoHS Compliance Yes

Key Features

  • High Voltage Capability: The BC846BQC-QZ can handle a maximum collector-emitter voltage of 65 V, making it suitable for a wide range of applications.
  • High Power Dissipation: With a power dissipation capability of 200 mW, this transistor is robust and efficient.
  • Compact Package: The SOT23 package is small and surface-mountable, ideal for compact electronic designs.
  • Automotive Qualified: Qualified according to AEC-Q101, this transistor is reliable for use in automotive applications.
  • High Gain Bandwidth Product: The transistor has a gain bandwidth product of 150 MHz, ensuring high performance in amplification and switching applications.

Applications

The BC846BQC-QZ is versatile and can be used in various applications, including:

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as sensors, actuators, and control units.
  • General-Purpose Switching and Amplification: It can be used in a variety of switching and amplification circuits in industrial, consumer, and mobile devices.
  • Signal Processing and Data Transmission: Its high gain bandwidth product makes it suitable for high-speed signal processing and data transmission applications.
  • Industrial Control Systems: It can be used in industrial control systems, motor control circuits, and other high-reliability applications.

Q & A

  1. What is the maximum collector-emitter voltage of the BC846BQC-QZ transistor?

    The maximum collector-emitter voltage (VCEO) is 65 V.

  2. What package type does the BC846BQC-QZ come in?

    The BC846BQC-QZ comes in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  3. Is the BC846BQC-QZ qualified for automotive applications?

    Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.

  4. What is the maximum DC collector current of the BC846BQC-QZ?

    The maximum DC collector current is 100 mA.

  5. What is the gain bandwidth product (fT) of the BC846BQC-QZ?

    The gain bandwidth product (fT) is 150 MHz.

  6. What is the operating temperature range of the BC846BQC-QZ?

    The operating temperature range is from -65°C to +150°C.

  7. Is the BC846BQC-QZ RoHS compliant?

    Yes, the BC846BQC-QZ is RoHS compliant.

  8. What are some common applications of the BC846BQC-QZ transistor?

    Common applications include automotive systems, general-purpose switching and amplification, signal processing, and industrial control systems.

  9. How does the BC846BQC-QZ handle power dissipation?

    The BC846BQC-QZ has a power dissipation capability of 200 mW.

  10. What is the emitter-base voltage (VEBO) of the BC846BQC-QZ?

    The emitter-base voltage (VEBO) is 6 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
0 Remaining View Similar

In Stock

$0.27
2,819

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC846BQC-QZ BC846AQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

Related Product By Categories

BC846AW,115
BC846AW,115
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PRTR5V0U2AX,215
PRTR5V0U2AX,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
BZT52H-B6V2,115
BZT52H-B6V2,115
Nexperia USA Inc.
DIODE ZENER 6.2V 375MW SOD123F
PDZ12B,115
PDZ12B,115
Nexperia USA Inc.
DIODE ZENER 12V 400MW SOD323
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74HC540DB,112
74HC540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SSOP
74HC85DB,118
74HC85DB,118
Nexperia USA Inc.
NEXPERIA 74HC85DB - MAGNITUDE CO
74HCT273D-Q100J
74HCT273D-Q100J
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20SO
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN