BC846BQC-QZ
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Nexperia USA Inc. BC846BQC-QZ

Manufacturer No:
BC846BQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 65V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BQC-QZ is a high-performance NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is designed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it ideal for compact and efficient electronic designs. It is qualified according to AEC-Q101, which recommends it for use in automotive applications. The BC846BQC-QZ is part of Nexperia’s extensive portfolio of bipolar transistors, known for their reliability, robustness, and high efficiency.

Key Specifications

Specification Value
Type Number BC846BQC-QZ
Package SOT23 (TO-236AB)
Polarity NPN
Collector-Emitter Voltage (VCEO) [max] 65 V
Collector-Base Voltage (VCBO) [max] 80 V
Emitter-Base Voltage (VEBO) [max] 6 V
Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 100 mA
Power Dissipation (Pd) 200 mW
Gain Bandwidth Product (fT) 150 MHz
Minimum Operating Temperature -65°C
Maximum Operating Temperature +150°C
Automotive Qualified Yes (AEC-Q101)
RoHS Compliance Yes

Key Features

  • High Voltage Capability: The BC846BQC-QZ can handle a maximum collector-emitter voltage of 65 V, making it suitable for a wide range of applications.
  • High Power Dissipation: With a power dissipation capability of 200 mW, this transistor is robust and efficient.
  • Compact Package: The SOT23 package is small and surface-mountable, ideal for compact electronic designs.
  • Automotive Qualified: Qualified according to AEC-Q101, this transistor is reliable for use in automotive applications.
  • High Gain Bandwidth Product: The transistor has a gain bandwidth product of 150 MHz, ensuring high performance in amplification and switching applications.

Applications

The BC846BQC-QZ is versatile and can be used in various applications, including:

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as sensors, actuators, and control units.
  • General-Purpose Switching and Amplification: It can be used in a variety of switching and amplification circuits in industrial, consumer, and mobile devices.
  • Signal Processing and Data Transmission: Its high gain bandwidth product makes it suitable for high-speed signal processing and data transmission applications.
  • Industrial Control Systems: It can be used in industrial control systems, motor control circuits, and other high-reliability applications.

Q & A

  1. What is the maximum collector-emitter voltage of the BC846BQC-QZ transistor?

    The maximum collector-emitter voltage (VCEO) is 65 V.

  2. What package type does the BC846BQC-QZ come in?

    The BC846BQC-QZ comes in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  3. Is the BC846BQC-QZ qualified for automotive applications?

    Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.

  4. What is the maximum DC collector current of the BC846BQC-QZ?

    The maximum DC collector current is 100 mA.

  5. What is the gain bandwidth product (fT) of the BC846BQC-QZ?

    The gain bandwidth product (fT) is 150 MHz.

  6. What is the operating temperature range of the BC846BQC-QZ?

    The operating temperature range is from -65°C to +150°C.

  7. Is the BC846BQC-QZ RoHS compliant?

    Yes, the BC846BQC-QZ is RoHS compliant.

  8. What are some common applications of the BC846BQC-QZ transistor?

    Common applications include automotive systems, general-purpose switching and amplification, signal processing, and industrial control systems.

  9. How does the BC846BQC-QZ handle power dissipation?

    The BC846BQC-QZ has a power dissipation capability of 200 mW.

  10. What is the emitter-base voltage (VEBO) of the BC846BQC-QZ?

    The emitter-base voltage (VEBO) is 6 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC846BQC-QZ BC846AQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

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