BC817K-40VL
  • Share:

Nexperia USA Inc. BC817K-40VL

Manufacturer No:
BC817K-40VL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
BC817K-40/SOT23/TO-236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K-40VL is an NPN general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BC817K series and is designed for medium-power amplification and switching applications. It is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for a wide range of electronic designs. The BC817K-40VL is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.

Key Specifications

Type number Package version Package name Size (mm) Channel type P tot (mW) V CEO [max] (V) I C [max] (mA) h FE [min] h FE [max] T J [max] (°C)
BC817K-40 SOT23 SOT23 2.9 x 1.3 x 1 NPN 775.0 45.0 500.0 250.0 600.0 150

Additional key specifications include:

  • Collector-Emitter Breakdown Voltage (V CEO): 45 V
  • Collector Current (I C): Up to 500 mA
  • Power Dissipation (P tot): 775 mW
  • Transition Frequency: 100 MHz
  • Saturation Voltage (V CE(sat)): 700 mV @ 50 mA, 500 mA
  • DC Current Gain (h FE): 250 to 600 @ 100 mA, 1 V

Key Features

  • High Power Dissipation Capability: The transistor can dissipate up to 775 mW, making it suitable for medium-power applications.
  • AEC-Q101 Qualified: Ensures the transistor's reliability and performance in automotive and other demanding environments.
  • High Transition Frequency: Operates at a frequency of 100 MHz, suitable for high-speed switching and amplification.
  • Low Saturation Voltage: Typical saturation voltage of 700 mV at 50 mA and 500 mA, reducing power losses in switching applications.
  • Compact Package: SOT23 (TO-236AB) surface-mounted package, ideal for space-constrained designs.

Applications

The BC817K-40VL transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive Electronics: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Industrial Electronics: Used in industrial control systems, motor drives, and other high-reliability applications.
  • Consumer Electronics: Found in consumer devices requiring medium-power amplification and switching.
  • Power Electronics: Used in power supplies, UPS systems, and other power management circuits.

Q & A

  1. What is the maximum collector-emitter voltage of the BC817K-40VL transistor?

    The maximum collector-emitter voltage (V CEO) is 45 V.

  2. What is the maximum collector current of the BC817K-40VL transistor?

    The maximum collector current (I C) is up to 500 mA.

  3. What is the transition frequency of the BC817K-40VL transistor?

    The transition frequency is 100 MHz.

  4. What is the typical saturation voltage of the BC817K-40VL transistor?

    The typical saturation voltage (V CE(sat)) is 700 mV at 50 mA and 500 mA.

  5. Is the BC817K-40VL transistor AEC-Q101 qualified?

    Yes, the BC817K-40VL transistor is AEC-Q101 qualified.

  6. What is the package type of the BC817K-40VL transistor?

    The package type is SOT23 (TO-236AB).

  7. What is the maximum junction temperature of the BC817K-40VL transistor?

    The maximum junction temperature (T J) is 150°C.

  8. What are the typical applications of the BC817K-40VL transistor?

    The transistor is used in automotive, industrial, consumer electronics, and power electronics applications.

  9. How much power can the BC817K-40VL transistor dissipate?

    The transistor can dissipate up to 775 mW.

  10. What is the DC current gain range of the BC817K-40VL transistor?

    The DC current gain (h FE) ranges from 250 to 600 at 100 mA and 1 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

$0.03
16,445

Please send RFQ , we will respond immediately.

Same Series
BC817K-40HVL
BC817K-40HVL
TRANS NPN 45V 0.5A TO236AB
BC817K-25HVL
BC817K-25HVL
TRANS NPN 45V 0.5A TO236AB
BC817K-16VL
BC817K-16VL
BC817K-16/SOT23/TO-236AB
BC817K-25VL
BC817K-25VL
BC817K-25/SOT23/TO-236AB
BC817K-40VL
BC817K-40VL
BC817K-40/SOT23/TO-236AB
BC817K-16HVL
BC817K-16HVL
TRANS NPN 45V 0.5A TO236AB
BC817K-16R
BC817K-16R
TRANS NPN 45V 0.5A TO236AB
BC817K-25R
BC817K-25R
TRANS NPN 45V 0.5A TO236AB
BC817K-40R
BC817K-40R
TRANS NPN 45V 0.5A TO236AB
BC817K-16HR
BC817K-16HR
TRANS NPN 45V 0.5A TO236AB
BC817K-25HR
BC817K-25HR
TRANS NPN 45V 0.5A TO236AB

Similar Products

Part Number BC817K-40VL BC817K-40HVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 250 mW 350 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

Related Product By Categories

BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BFS20,235
BFS20,235
Nexperia USA Inc.
TRANS NPN 20V 0.025A TO236AB
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
MJD45H11-001
MJD45H11-001
onsemi
TRANS PNP 80V 8A IPAK
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323

Related Product By Brand

BAT54QB-QZ
BAT54QB-QZ
Nexperia USA Inc.
BAT54QB-Q/SOT8015/DFN1110D-3
PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZT52H-B6V2,115
BZT52H-B6V2,115
Nexperia USA Inc.
DIODE ZENER 6.2V 375MW SOD123F
BZX84-C47/DG/B2,23
BZX84-C47/DG/B2,23
Nexperia USA Inc.
DIODE ZENER 47V 250MW TO236AB
PEMD2,315
PEMD2,315
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
PUMH2/DG/B3,115
PUMH2/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
BC857-QR
BC857-QR
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
NX138BKVL
NX138BKVL
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74HC11DB,112
74HC11DB,112
Nexperia USA Inc.
NEXPERIA 74HC11D - AND GATE, HC/
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12