BC817K-40VL
  • Share:

Nexperia USA Inc. BC817K-40VL

Manufacturer No:
BC817K-40VL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
BC817K-40/SOT23/TO-236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K-40VL is an NPN general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BC817K series and is designed for medium-power amplification and switching applications. It is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for a wide range of electronic designs. The BC817K-40VL is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.

Key Specifications

Type number Package version Package name Size (mm) Channel type P tot (mW) V CEO [max] (V) I C [max] (mA) h FE [min] h FE [max] T J [max] (°C)
BC817K-40 SOT23 SOT23 2.9 x 1.3 x 1 NPN 775.0 45.0 500.0 250.0 600.0 150

Additional key specifications include:

  • Collector-Emitter Breakdown Voltage (V CEO): 45 V
  • Collector Current (I C): Up to 500 mA
  • Power Dissipation (P tot): 775 mW
  • Transition Frequency: 100 MHz
  • Saturation Voltage (V CE(sat)): 700 mV @ 50 mA, 500 mA
  • DC Current Gain (h FE): 250 to 600 @ 100 mA, 1 V

Key Features

  • High Power Dissipation Capability: The transistor can dissipate up to 775 mW, making it suitable for medium-power applications.
  • AEC-Q101 Qualified: Ensures the transistor's reliability and performance in automotive and other demanding environments.
  • High Transition Frequency: Operates at a frequency of 100 MHz, suitable for high-speed switching and amplification.
  • Low Saturation Voltage: Typical saturation voltage of 700 mV at 50 mA and 500 mA, reducing power losses in switching applications.
  • Compact Package: SOT23 (TO-236AB) surface-mounted package, ideal for space-constrained designs.

Applications

The BC817K-40VL transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive Electronics: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Industrial Electronics: Used in industrial control systems, motor drives, and other high-reliability applications.
  • Consumer Electronics: Found in consumer devices requiring medium-power amplification and switching.
  • Power Electronics: Used in power supplies, UPS systems, and other power management circuits.

Q & A

  1. What is the maximum collector-emitter voltage of the BC817K-40VL transistor?

    The maximum collector-emitter voltage (V CEO) is 45 V.

  2. What is the maximum collector current of the BC817K-40VL transistor?

    The maximum collector current (I C) is up to 500 mA.

  3. What is the transition frequency of the BC817K-40VL transistor?

    The transition frequency is 100 MHz.

  4. What is the typical saturation voltage of the BC817K-40VL transistor?

    The typical saturation voltage (V CE(sat)) is 700 mV at 50 mA and 500 mA.

  5. Is the BC817K-40VL transistor AEC-Q101 qualified?

    Yes, the BC817K-40VL transistor is AEC-Q101 qualified.

  6. What is the package type of the BC817K-40VL transistor?

    The package type is SOT23 (TO-236AB).

  7. What is the maximum junction temperature of the BC817K-40VL transistor?

    The maximum junction temperature (T J) is 150°C.

  8. What are the typical applications of the BC817K-40VL transistor?

    The transistor is used in automotive, industrial, consumer electronics, and power electronics applications.

  9. How much power can the BC817K-40VL transistor dissipate?

    The transistor can dissipate up to 775 mW.

  10. What is the DC current gain range of the BC817K-40VL transistor?

    The DC current gain (h FE) ranges from 250 to 600 at 100 mA and 1 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

$0.03
16,445

Please send RFQ , we will respond immediately.

Same Series
BC817K-40HVL
BC817K-40HVL
TRANS NPN 45V 0.5A TO236AB
BC817K-25HVL
BC817K-25HVL
TRANS NPN 45V 0.5A TO236AB
BC817K-16VL
BC817K-16VL
BC817K-16/SOT23/TO-236AB
BC817K-25VL
BC817K-25VL
BC817K-25/SOT23/TO-236AB
BC817K-40VL
BC817K-40VL
BC817K-40/SOT23/TO-236AB
BC817K-16HVL
BC817K-16HVL
TRANS NPN 45V 0.5A TO236AB
BC817K-16R
BC817K-16R
TRANS NPN 45V 0.5A TO236AB
BC817K-25R
BC817K-25R
TRANS NPN 45V 0.5A TO236AB
BC817K-40R
BC817K-40R
TRANS NPN 45V 0.5A TO236AB
BC817K-16HR
BC817K-16HR
TRANS NPN 45V 0.5A TO236AB
BC817K-25HR
BC817K-25HR
TRANS NPN 45V 0.5A TO236AB

Similar Products

Part Number BC817K-40VL BC817K-40HVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 250 mW 350 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

Related Product By Categories

TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BDX53C
BDX53C
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
BC847BW-AQ
BC847BW-AQ
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223

Related Product By Brand

PMEG10020ELR-QX
PMEG10020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BC847BS-QX
BC847BS-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BC807-40HZ
BC807-40HZ
Nexperia USA Inc.
BC807-40H/SOT23/TO-236AB
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
PMBT3906M,315
PMBT3906M,315
Nexperia USA Inc.
TRANS PNP 40V 0.2A SOT883
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74HCT273D-Q100J
74HCT273D-Q100J
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20SO
HEF4013BTT-Q100J
HEF4013BTT-Q100J
Nexperia USA Inc.
IC FF D-TYPE DUAL 1BIT 14TSSOP
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER