FM25V05-GTR
  • Share:

Infineon Technologies FM25V05-GTR

Manufacturer No:
FM25V05-GTR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
IC FRAM 512KBIT SPI 40MHZ 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FM25V05-GTR is a 512 Kbit Ferroelectric Random Access Memory (F-RAM) produced by Infineon Technologies. This nonvolatile memory device is designed for industrial applications and offers superior performance compared to traditional serial flash and EEPROM. It features rapid bus-speed write operations, high write endurance, and long data retention, making it ideal for reliable nonvolatile memory applications.

Key Specifications

SpecificationValue
Memory Size512 Kbit (64K × 8)
Data Retention151 years
Write Endurance100 trillion (10^14) read/writes
Bus SpeedUp to 40 MHz
Operating Voltage2.0 V to 3.6 V
Operating Temperature–40°C to +85°C
Package Type8-pin SOIC
Power Consumption300 μA active current at 1 MHz, 90 μA standby current, 5 μA sleep mode current

Key Features

  • NoDelay™ writes, allowing write operations at bus speed without delays
  • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
  • Sophisticated write protection scheme
  • Device ID with manufacturer and product information
  • Low power consumption
  • Low-voltage operation
  • Industrial temperature range: –40°C to +85°C
  • RoHS compliant

Applications

The FM25V05-GTR is suitable for a variety of applications that require reliable and high-performance nonvolatile memory. These include:

  • Data collection systems where frequent writes are necessary
  • Industrial control systems that demand rapid write operations
  • Systems replacing serial EEPROM or flash memory for improved performance
  • Applications requiring low power consumption and high endurance

Q & A

  1. What is the memory size of the FM25V05-GTR?
    The FM25V05-GTR has a memory size of 512 Kbit, logically organized as 64K × 8 bits.
  2. How long does the data retention last?
    The data retention lasts for 151 years.
  3. What is the write endurance of the FM25V05-GTR?
    The write endurance is 100 trillion (10^14) read/write cycles.
  4. What is the maximum bus speed of the FM25V05-GTR?
    The maximum bus speed is up to 40 MHz.
  5. What is the operating voltage range of the FM25V05-GTR?
    The operating voltage range is from 2.0 V to 3.6 V.
  6. What is the operating temperature range of the FM25V05-GTR?
    The operating temperature range is from –40°C to +85°C.
  7. What type of package does the FM25V05-GTR come in?
    The FM25V05-GTR comes in an 8-pin SOIC package.
  8. Is the FM25V05-GTR RoHS compliant?
    Yes, the FM25V05-GTR is RoHS compliant.
  9. What are some typical applications for the FM25V05-GTR?
    Typical applications include data collection systems, industrial control systems, and systems requiring low power consumption and high endurance.
  10. How does the FM25V05-GTR compare to traditional serial flash and EEPROM?
    The FM25V05-GTR outperforms traditional serial flash and EEPROM with its rapid bus-speed write operations, high write endurance, and long data retention.

Product Attributes

Memory Type:Non-Volatile
Memory Format:FRAM
Technology:FRAM (Ferroelectric RAM)
Memory Size:512Kb (64K x 8)
Memory Interface:SPI
Clock Frequency:40 MHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:2V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$13.78
32

Please send RFQ , we will respond immediately.

Same Series
FM25V05-G
FM25V05-G
IC FRAM 512KBIT SPI 40MHZ 8SOIC

Similar Products

Part Number FM25V05-GTR FM24V05-GTR FM25V01-GTR FM25V02-GTR
Manufacturer Infineon Technologies Infineon Technologies Flip Electronics Infineon Technologies
Product Status Active Active Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile Non-Volatile Non-Volatile
Memory Format FRAM FRAM FRAM FRAM
Technology FRAM (Ferroelectric RAM) FRAM (Ferroelectric RAM) FRAM (Ferroelectric RAM) FRAM (Ferroelectric RAM)
Memory Size 512Kb (64K x 8) 512Kb (64K x 8) 128Kb (16K x 8) 256Kb (32K x 8)
Memory Interface SPI I²C SPI SPI
Clock Frequency 40 MHz 3.4 MHz 40 MHz 40 MHz
Write Cycle Time - Word, Page - - - -
Access Time - 130 ns - -
Voltage - Supply 2V ~ 3.6V 2V ~ 3.6V 2V ~ 3.6V 2V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC

Related Product By Categories

IS62C256AL-45ULI
IS62C256AL-45ULI
ISSI, Integrated Silicon Solution Inc
IC SRAM 256KBIT PARALLEL 28SOP
M24128X-FCU6T/TF
M24128X-FCU6T/TF
STMicroelectronics
IC EEPROM 128KBIT I2C 4WLCSP
24LC512T-I/SN
24LC512T-I/SN
Microchip Technology
IC EEPROM 512KBIT I2C 8SOIC
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
IS42S16160J-6BLI-TR
IS42S16160J-6BLI-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PARALLEL 54TFBGA
MT40A512M16LY-062E AAT:E
MT40A512M16LY-062E AAT:E
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
MT25QL02GCBB8E12-0SIT TR
MT25QL02GCBB8E12-0SIT TR
Micron Technology Inc.
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
AT24C02AN-10SC-2.7
AT24C02AN-10SC-2.7
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M29F400BB70N6T TR
M29F400BB70N6T TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M93C46-MN6P
M93C46-MN6P
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
AT45DB321D-SU-2.5-SL383
AT45DB321D-SU-2.5-SL383
Adesto Technologies
IC FLASH 32MBIT SPI 50MHZ 8SOIC
MTFC16GAPALBH-IT TR
MTFC16GAPALBH-IT TR
Micron Technology Inc.
IC FLASH 128GBIT MMC 153TFBGA

Related Product By Brand

BAV70E6767
BAV70E6767
Infineon Technologies
GENERAL PURPOSE HIGH SPEED SWITC
BAV 70T E6327
BAV 70T E6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC75
BAS16B5000
BAS16B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV199E6359
BAV199E6359
Infineon Technologies
RECTIFIER, 2 ELEMENT, 0.2A, 80V
BAT 54 B5003
BAT 54 B5003
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOT23-3
BC847PNE6433BTMA1
BC847PNE6433BTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
SPW47N60C3FKSA1
SPW47N60C3FKSA1
Infineon Technologies
MOSFET N-CH 650V 47A TO247-3
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
IPD50P04P4L11ATMA1
IPD50P04P4L11ATMA1
Infineon Technologies
MOSFET P-CH 40V 50A TO252-3
FF600R12ME4CPBPSA1
FF600R12ME4CPBPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
BCV61BE6327
BCV61BE6327
Infineon Technologies
TRANSISTORS FOR CURRENT MIRROR
TLE7368EXUMA3
TLE7368EXUMA3
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36