Overview
The BCX56E6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. It is part of the BCX56 series, which includes NPN silicon AF transistors designed for audio frequency (AF) driver and output stages. This transistor is known for its high collector current and low collector-emitter saturation voltage, making it suitable for medium power switching and amplification applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | V |
| Collector-Base Voltage | VCBO | 100 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 1 | A |
| Peak Collector Current (tp ≤ 10 ms) | ICM | 1.5 | A |
| Base Current | IB | 100 | mA |
| Peak Base Current (tp ≤ 10 ms) | IBM | 200 | mA |
| Total Power Dissipation (TS ≤ 120°C) | Ptot | 2 | W |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature | Tstg | -65 to 150 | °C |
| Thermal Resistance (Junction to Ambient) | RθJA | 60 | °C/W |
| Collector-Emitter Saturation Voltage | VCE(sat) | < 0.5 | V @ IC = 500 mA, IB = 50 mA |
| DC Current Gain | hFE | 25 to 250 | - @ IC = 5 mA to 500 mA, VCE = 2 V |
Key Features
- High collector current of up to 1 A and peak collector current of up to 1.5 A (tp ≤ 10 ms)
- Low collector-emitter saturation voltage (VCE(sat) < 0.5 V @ IC = 500 mA, IB = 50 mA)
- Pb-free (RoHS compliant) package in SOT89 format
- High DC current gain (hFE) ranging from 25 to 250 depending on the collector current
- Complementary types available (BCX51...BCX53 for PNP)
- Matte tin finish leads, solderable per MIL-STD-202 Method 208
- Moisture sensitivity level 1 per J-STD-020
Applications
- Medium power switching and amplification applications
- Audio frequency (AF) driver and output stages
- General-purpose amplifiers and switching circuits where high current and low saturation voltage are required
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BCX56E6327 transistor?
The maximum collector-emitter voltage (VCEO) is 80 V
- What is the peak collector current (ICM) of the BCX56E6327 transistor?
The peak collector current (ICM) is 1.5 A for pulse durations of up to 10 ms
- What is the thermal resistance (RθJA) of the BCX56E6327 transistor?
The thermal resistance (RθJA) is approximately 60 °C/W
- What is the collector-emitter saturation voltage (VCE(sat)) of the BCX56E6327 transistor?
The collector-emitter saturation voltage (VCE(sat)) is less than 0.5 V at IC = 500 mA and IB = 50 mA
- What is the DC current gain (hFE) range of the BCX56E6327 transistor?
The DC current gain (hFE) ranges from 25 to 250 depending on the collector current
- Is the BCX56E6327 transistor RoHS compliant?
Yes, the BCX56E6327 transistor is Pb-free and RoHS compliant
- What is the package type of the BCX56E6327 transistor?
The package type is SOT89
- What are the typical applications of the BCX56E6327 transistor?
Typical applications include medium power switching, amplification, and AF driver and output stages
- What is the storage temperature range for the BCX56E6327 transistor?
The storage temperature range is -65 to 150 °C
- Is the BCX56E6327 transistor still in production?
No, the BCX56E6327 transistor is obsolete and no longer manufactured
