BCW60DE6327
  • Share:

Infineon Technologies BCW60DE6327

Manufacturer No:
BCW60DE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 32V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCW60DE6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for general-purpose applications and is packaged in a surface-mount PG-SOT23 case. It is known for its reliability and performance in various electronic circuits.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Emitter Voltage (Vce)32 V
Collector Current (Ic)100 mA
Frequency (fT)250 MHz
Power Dissipation (Pd)330 mW
PackagePG-SOT23 (Surface Mount)

Key Features

  • High frequency operation up to 250 MHz
  • Low power consumption with a power dissipation of 330 mW
  • Compact PG-SOT23 surface-mount package for space-efficient designs
  • General-purpose NPN transistor suitable for a wide range of applications

Applications

The BCW60DE6327 is suitable for various general-purpose applications, including but not limited to:

  • Amplifier circuits
  • Switching circuits
  • Audio and video equipment
  • Automotive electronics
  • Industrial control systems

Q & A

  1. What is the collector-emitter voltage rating of the BCW60DE6327?
    The collector-emitter voltage rating is 32 V.
  2. What is the maximum collector current of the BCW60DE6327?
    The maximum collector current is 100 mA.
  3. What is the frequency range of the BCW60DE6327?
    The transistor operates up to 250 MHz.
  4. What is the power dissipation of the BCW60DE6327?
    The power dissipation is 330 mW.
  5. What is the package type of the BCW60DE6327?
    The package type is PG-SOT23 (surface mount).
  6. What are some common applications of the BCW60DE6327?
    It is used in amplifier circuits, switching circuits, audio and video equipment, automotive electronics, and industrial control systems.
  7. Who is the manufacturer of the BCW60DE6327?
    The manufacturer is Infineon Technologies.
  8. What type of transistor is the BCW60DE6327?
    The BCW60DE6327 is an NPN bipolar junction transistor.
  9. Is the BCW60DE6327 suitable for high-frequency applications?
    Yes, it is suitable for high-frequency applications up to 250 MHz.
  10. What are the advantages of using the BCW60DE6327 in electronic circuits?
    It offers low power consumption, high frequency operation, and a compact surface-mount package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):32 V
Vce Saturation (Max) @ Ib, Ic:550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max):20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:380 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.03
30,281

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BCW60DE6327 BCW61DE6327 BCW60FE6327 BCW60BE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type NPN PNP - NPN
Current - Collector (Ic) (Max) 100 mA 100 mA - 100 mA
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V - 32 V
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA 550mV @ 1.25mA, 50mA - 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO) - 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA, 5V 380 @ 2mA, 5V - 180 @ 2mA, 5V
Power - Max 330 mW 330 mW - 330 mW
Frequency - Transition 250MHz 250MHz - 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) - 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23 - PG-SOT23

Related Product By Categories

TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BC847AMB,315
BC847AMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
2N5191G
2N5191G
onsemi
TRANS NPN 60V 4A TO126
PBSS5350X,146
PBSS5350X,146
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
MMBT2222ALT3G
MMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
MJD45H11-001
MJD45H11-001
onsemi
TRANS PNP 80V 8A IPAK

Related Product By Brand

BAS4005WE6327BTSA1
BAS4005WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BC860BWH6327XTSA1
BC860BWH6327XTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC847BWH6433XTMA1
BC847BWH6433XTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
BCX5216H6327XTSA1
BCX5216H6327XTSA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
IRF640NSTRLPBF
IRF640NSTRLPBF
Infineon Technologies
MOSFET N-CH 200V 18A D2PAK
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
SPP20N60C3XKSA1
SPP20N60C3XKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
TLE72593GEXUMA3
TLE72593GEXUMA3
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
STK14CA8-NF45ITR
STK14CA8-NF45ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC