BCV 61A E6327
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Infineon Technologies BCV 61A E6327

Manufacturer No:
BCV 61A E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANSISTOR NPN DBL 30V SOT143-4
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BCV 61A E6327 is a dual NPN silicon transistor produced by Infineon Technologies. This component is designed for applications requiring good thermal coupling and VBE matching, making it suitable for use as a current mirror. The transistor is packaged in a SOT143 package, which is Pb-free and RoHS compliant. It is also qualified according to AEC Q101 standards, ensuring reliability in automotive and other demanding environments.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage (transistor T1) VCEO 30 V
Collector-base voltage (open emitter) (transistor T1) VCBO 30 V
Emitter-base voltage VEBS 6 V
DC collector current IC 100 mA
Peak collector current, tp < 10 ms ICM 200 mA
Base peak current (transistor T1) IBM 200 mA
Total power dissipation, TS = 99 °C Ptot 300 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150 °C
Thermal Resistance (Junction - soldering point) RthJS ≤170 K/W

Key Features

  • Good thermal coupling and VBE matching, making it ideal for use as a current mirror.
  • High current gain with values ranging from 100 to 800 depending on the specific type (BCV61B or BCV61C).
  • Low collector-emitter saturation voltage, typically around 90-200 mV.
  • Pb-free (RoHS compliant) package.
  • Qualified according to AEC Q101 standards for automotive applications.
  • High transition frequency of up to 250 MHz.
  • Low noise figure, typically around 2 dB.

Applications

  • Current mirrors in analog circuits.
  • Automotive electronics due to its AEC Q101 qualification.
  • Audio and video amplifiers where low noise and high current gain are required.
  • Switching and linear amplification in various electronic devices.
  • General-purpose transistor applications where thermal stability and matching are crucial.

Q & A

  1. What is the maximum collector-emitter voltage for the BCV 61A E6327?

    The maximum collector-emitter voltage (VCEO) is 30 V.

  2. What is the typical current gain (hFE) of the BCV 61A E6327?

    The typical current gain (hFE) ranges from 100 to 800 depending on the specific type and operating conditions.

  3. Is the BCV 61A E6327 RoHS compliant?
  4. What is the maximum junction temperature for the BCV 61A E6327?

    The maximum junction temperature (Tj) is 150 °C.

  5. What are the typical applications of the BCV 61A E6327?
  6. What is the thermal resistance of the BCV 61A E6327?
  7. Is the BCV 61A E6327 qualified for automotive use?
  8. What is the storage temperature range for the BCV 61A E6327?
  9. What is the peak collector current for the BCV 61A E6327?
  10. What is the transition frequency of the BCV 61A E6327?

Product Attributes

Transistor Type:2 NPN, Base Collector Junction
Applications:Current Mirror
Voltage - Rated:30V
Current Rating (Amps):100mA
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:PG-SOT-143-3D
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