BCV 61A E6327
  • Share:

Infineon Technologies BCV 61A E6327

Manufacturer No:
BCV 61A E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANSISTOR NPN DBL 30V SOT143-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCV 61A E6327 is a dual NPN silicon transistor produced by Infineon Technologies. This component is designed for applications requiring good thermal coupling and VBE matching, making it suitable for use as a current mirror. The transistor is packaged in a SOT143 package, which is Pb-free and RoHS compliant. It is also qualified according to AEC Q101 standards, ensuring reliability in automotive and other demanding environments.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage (transistor T1) VCEO 30 V
Collector-base voltage (open emitter) (transistor T1) VCBO 30 V
Emitter-base voltage VEBS 6 V
DC collector current IC 100 mA
Peak collector current, tp < 10 ms ICM 200 mA
Base peak current (transistor T1) IBM 200 mA
Total power dissipation, TS = 99 °C Ptot 300 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150 °C
Thermal Resistance (Junction - soldering point) RthJS ≤170 K/W

Key Features

  • Good thermal coupling and VBE matching, making it ideal for use as a current mirror.
  • High current gain with values ranging from 100 to 800 depending on the specific type (BCV61B or BCV61C).
  • Low collector-emitter saturation voltage, typically around 90-200 mV.
  • Pb-free (RoHS compliant) package.
  • Qualified according to AEC Q101 standards for automotive applications.
  • High transition frequency of up to 250 MHz.
  • Low noise figure, typically around 2 dB.

Applications

  • Current mirrors in analog circuits.
  • Automotive electronics due to its AEC Q101 qualification.
  • Audio and video amplifiers where low noise and high current gain are required.
  • Switching and linear amplification in various electronic devices.
  • General-purpose transistor applications where thermal stability and matching are crucial.

Q & A

  1. What is the maximum collector-emitter voltage for the BCV 61A E6327?

    The maximum collector-emitter voltage (VCEO) is 30 V.

  2. What is the typical current gain (hFE) of the BCV 61A E6327?

    The typical current gain (hFE) ranges from 100 to 800 depending on the specific type and operating conditions.

  3. Is the BCV 61A E6327 RoHS compliant?
  4. What is the maximum junction temperature for the BCV 61A E6327?

    The maximum junction temperature (Tj) is 150 °C.

  5. What are the typical applications of the BCV 61A E6327?
  6. What is the thermal resistance of the BCV 61A E6327?
  7. Is the BCV 61A E6327 qualified for automotive use?
  8. What is the storage temperature range for the BCV 61A E6327?
  9. What is the peak collector current for the BCV 61A E6327?
  10. What is the transition frequency of the BCV 61A E6327?

Product Attributes

Transistor Type:2 NPN, Base Collector Junction
Applications:Current Mirror
Voltage - Rated:30V
Current Rating (Amps):100mA
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:PG-SOT-143-3D
0 Remaining View Similar

In Stock

-
189

Please send RFQ , we will respond immediately.

Same Series
BCV61CE6327HTSA1
BCV61CE6327HTSA1
TRANSISTOR NPN DOUBLE SOT-143
BCV61BE6433HTMA1
BCV61BE6433HTMA1
TRANSISTOR NPN DOUBLE 45V SOT143
BCV61BE6327HTSA1
BCV61BE6327HTSA1
TRANSISTOR NPN DOUBLE SOT-143
PRL1632-R016-F-T1
PRL1632-R016-F-T1
RES 0.016 OHM 1W 1206 WIDE
RG3216L-331-L-T05
RG3216L-331-L-T05
RES SMD 330 OHM 0.01% 1/8W 1206
RG3216L-472-L-T05
RG3216L-472-L-T05
RES SMD 4.7K OHM 0.01% 1/8W 1206

Related Product By Categories

PMD3001D,115
PMD3001D,115
Nexperia USA Inc.
IC MOSFET DRIVER 6TSOP
BCM62B,215
BCM62B,215
Nexperia USA Inc.
TRANS PNP DBL 45V 100MA SOT-143B
BCM61B,215
BCM61B,215
Nexperia USA Inc.
TRANS NPN DBL 45V 100MA SOT-143B
BCV61CE6327HTSA1
BCV61CE6327HTSA1
Infineon Technologies
TRANSISTOR NPN DOUBLE SOT-143
BCV61,215
BCV61,215
Nexperia USA Inc.
TRANS NPN 30V 100MA DUAL SOT143B
BCV61,235
BCV61,235
Nexperia USA Inc.
TRANS NPN 30V 100MA DUAL SOT143B
BCV62,235
BCV62,235
NXP USA Inc.
NOW NEXPERIA BCV62 - SMALL SIGNA
PMD2001D,115
PMD2001D,115
Nexperia USA Inc.
IC MOSFET DRIVER 6TSOP
BCV61B,235
BCV61B,235
Nexperia USA Inc.
TRANS NPN 30V 100MA DUAL SOT143B
BCV61BE6327
BCV61BE6327
Infineon Technologies
TRANSISTORS FOR CURRENT MIRROR
STC04IE170HV
STC04IE170HV
STMicroelectronics
TRANS ESBT 1700V 4A TO247-4LHV
BCV 61A E6327
BCV 61A E6327
Infineon Technologies
TRANSISTOR NPN DBL 30V SOT143-4

Related Product By Brand

BAV 199 B6327
BAV 199 B6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC847SH6359XTMA1
BC847SH6359XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
2N7002DW L6327
2N7002DW L6327
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
IRFR024NTRPBF
IRFR024NTRPBF
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
IPW65R080CFDFKSA1
IPW65R080CFDFKSA1
Infineon Technologies
MOSFET N-CH 700V 43.3A TO247-3
BSS123IXTMA1
BSS123IXTMA1
Infineon Technologies
100V N-CH SMALL SIGNAL MOSFET IN
BSC016N06NSSCATMA1
BSC016N06NSSCATMA1
Infineon Technologies
TRENCH 40<-<100V PG-WSON-8
BSS123L7874XT
BSS123L7874XT
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
SAK-TC1796-256F150EBC
SAK-TC1796-256F150EBC
Infineon Technologies
32-BIT RISC FLASH MCU
TLE6250GXUMA1
TLE6250GXUMA1
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
ICE2PCS02GE8191XUMA1
ICE2PCS02GE8191XUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO