Overview
The PBSM5240PFH,115 is a versatile electronic component produced by Nexperia USA Inc. It is a combination of a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and an N-channel Trench Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). This device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package, specifically a 6-UDFN Exposed Pad package. This configuration makes it ideal for applications requiring high efficiency, low heat generation, and compact design.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | Open base | - | - | 40 V | V |
| Collector Current (IC) | - | - | - | 1.8 A | A |
| Repetitive Peak Collector Current (ICRM) | - | - | - | 2 A | A |
| Peak Collector Current (ICM) | Single pulse; tp ≤ 1 ms | - | - | 3 A | A |
| Collector-Emitter Saturation Resistance (RCEsat) | IC = -500 mA; IB = -50 mA | 240 | 340 | mΩ | |
| Drain-Source Breakdown Voltage (V(BR)DSS) | ID = 10 μA; VGS = 0 V | 27 | - | 30 V | V |
| Gate-Source Threshold Voltage (VGS(th)) | ID = 250 μA; VDS = VGS | 0.45 | 0.7 | 0.95 V | V |
| Thermal Resistance from Junction to Ambient (Rth(j-a)) | In free air | - | - | 115 K/W (PNP), 165 K/W (N-channel) | K/W |
| RoHS Status | - | - | - | ROHS3 Compliant | - |
| Moisture Sensitivity Level (MSL) | - | - | - | 1 (Unlimited) | - |
Key Features
- Very low collector-emitter saturation voltage (VCEsat): Enhances efficiency and reduces power losses.
- High collector current capability: Supports high current applications.
- High energy efficiency: Less heat generation due to low VCEsat and efficient MOSFET design.
- Compact design: Smaller required Printed-Circuit Board (PCB) area compared to conventional transistors.
- Dual functionality: Combines PNP BISS transistor and N-channel Trench MOSFET in a single package.
Applications
- Load switch: Ideal for switching loads in various electronic circuits.
- Battery-driven devices: Suitable for devices powered by batteries due to its high efficiency.
- Power management: Used in power management circuits to control and regulate power flow.
- Charging circuits: Can be used in charging circuits for batteries and other power storage devices.
- Power switches (e.g., motors, fans): Effective in controlling power to motors, fans, and other high-current devices.
Q & A
- What is the package type of the PBSM5240PFH,115?
The PBSM5240PFH,115 is housed in a 6-UDFN Exposed Pad package.
- What are the voltage and current ratings for the PNP transistor?
The PNP transistor has a voltage rating of 40V and a current rating of 1.8A.
- What are the voltage and current ratings for the N-channel MOSFET?
The N-channel MOSFET has a voltage rating of 30V and a current rating of 660mA.
- Is the PBSM5240PFH,115 RoHS compliant?
Yes, the PBSM5240PFH,115 is ROHS3 compliant.
- What is the thermal resistance from junction to ambient for the PNP transistor and N-channel MOSFET?
The thermal resistance from junction to ambient is 115 K/W for the PNP transistor and 165 K/W for the N-channel MOSFET.
- What are some typical applications of the PBSM5240PFH,115?
Typical applications include load switches, battery-driven devices, power management, charging circuits, and power switches for motors and fans.
- What is the collector-emitter saturation resistance (RCEsat) of the PNP transistor?
The RCEsat is between 240 mΩ and 340 mΩ.
- What is the gate-source threshold voltage (VGS(th)) of the N-channel MOSFET?
The VGS(th) is between 0.45 V and 0.95 V.
- How does the PBSM5240PFH,115 contribute to energy efficiency in circuits?
The device contributes to high energy efficiency due to its very low VCEsat and less heat generation.
- What is the moisture sensitivity level (MSL) of the PBSM5240PFH,115?
The MSL is 1 (Unlimited).
