BCP54E6327
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Infineon Technologies BCP54E6327

Manufacturer No:
BCP54E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP54-16E6327 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for switching applications and offers a robust set of characteristics that make it suitable for a variety of electronic circuits. With its single configuration and small outline SOT-223 package, it is ideal for space-constrained designs while maintaining high reliability and performance.

Key Specifications

ParameterValue
Manufacturer Part NumberBCP54-16E6327
Pb-free CodeYes
RoHS CodeYes
Part Life Cycle CodeActive
Collector Current-Max (IC)1 A
Collector-Emitter Voltage-Max45 V
ConfigurationSINGLE
DC Current Gain-Min (hFE)100
Polarity/Channel TypeNPN
Package StyleSMALL OUTLINE (SOT-223)
Package Body MaterialPLASTIC/EPOXY
Terminal FinishMATTE TIN
Transition Frequency-Nom (fT)100 MHz
Peak Reflow Temperature (Cel)260

Key Features

  • High Collector Current: Up to 1 A, making it suitable for high-current applications.
  • High Collector-Emitter Voltage: Up to 45 V, providing robust voltage handling.
  • High DC Current Gain: Minimum of 100, ensuring reliable amplification.
  • Transition Frequency: 100 MHz, suitable for high-frequency switching applications.
  • Compact Package: SOT-223 package, ideal for space-constrained designs.
  • Environmental Compliance: Pb-free and RoHS compliant, meeting environmental standards.

Applications

The BCP54-16E6327 transistor is versatile and can be used in various applications, including:

  • Switching Circuits: Due to its high transition frequency and current handling capabilities, it is well-suited for switching applications.
  • Amplifier Circuits: Its high DC current gain makes it a reliable choice for amplifier circuits.
  • Automotive Electronics: The transistor’s robust voltage and current handling make it suitable for automotive applications.
  • Industrial Control Systems: It can be used in control systems that require high reliability and performance.

Q & A

  1. What is the maximum collector current of the BCP54-16E6327 transistor?
    The maximum collector current is 1 A.
  2. What is the maximum collector-emitter voltage of the BCP54-16E6327 transistor?
    The maximum collector-emitter voltage is 45 V.
  3. What is the minimum DC current gain (hFE) of the BCP54-16E6327 transistor?
    The minimum DC current gain is 100.
  4. What is the transition frequency of the BCP54-16E6327 transistor?
    The transition frequency is 100 MHz.
  5. Is the BCP54-16E6327 transistor Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  6. What is the package style of the BCP54-16E6327 transistor?
    The package style is SMALL OUTLINE (SOT-223).
  7. What is the peak reflow temperature for the BCP54-16E6327 transistor?
    The peak reflow temperature is 260°C.
  8. What are some common applications of the BCP54-16E6327 transistor?
    Common applications include switching circuits, amplifier circuits, automotive electronics, and industrial control systems.
  9. What is the polarity/channel type of the BCP54-16E6327 transistor?
    The polarity/channel type is NPN.
  10. Is the BCP54-16E6327 transistor suitable for high-frequency applications?
    Yes, it is suitable for high-frequency applications due to its 100 MHz transition frequency.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP54E6327 BCP55E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 2 W
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 PG-SOT223-4-21

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