BCP54-16E6327
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Infineon Technologies BCP54-16E6327

Manufacturer No:
BCP54-16E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP54-16E6327 is a high-performance NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for use in audio frequency (AF) driver and output stages, offering high collector current and low collector-emitter saturation voltage. It is part of the BCP54 series, which includes complementary PNP types such as BCP51 and BCP53. The device is RoHS compliant and Pb-free, ensuring environmental sustainability and regulatory compliance. It is qualified according to the AEC Q101 standard, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 45 V
Collector Current (IC) 1 A
DC Current Gain (hFE) 100 -
Transition Frequency (fT) 100 MHz
Package Style SOT-223 -
Package Body Material Plastic/Epoxy -
Terminal Finish MATTE TIN -
Peak Reflow Temperature 260 °C
Junction Temperature -65 to 150 °C

Key Features

  • High collector current of up to 1 A, making it suitable for high-current applications.
  • Low collector-emitter saturation voltage, which reduces power losses and improves efficiency.
  • NPN silicon bipolar junction transistor, ideal for AF driver and output stages.
  • RoHS compliant and Pb-free, ensuring environmental sustainability.
  • Qualified according to the AEC Q101 standard, suitable for automotive and other demanding applications.
  • SOT-223 package, which is a small outline transistor package, suitable for surface mount technology.
  • MATTE TIN terminal finish, providing good solderability and reliability.

Applications

  • Audio frequency (AF) driver and output stages.
  • Automotive applications due to its AEC Q101 qualification.
  • General-purpose switching applications.
  • Power amplifiers and audio equipment.
  • Other high-current, low-voltage applications requiring high reliability and performance.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCP54-16E6327 transistor?

    The collector-emitter voltage (VCEO) of the BCP54-16E6327 transistor is 45 V.

  2. What is the maximum collector current (IC) of the BCP54-16E6327 transistor?

    The maximum collector current (IC) of the BCP54-16E6327 transistor is 1 A.

  3. What is the DC current gain (hFE) of the BCP54-16E6327 transistor?

    The DC current gain (hFE) of the BCP54-16E6327 transistor is a minimum of 100.

  4. What is the transition frequency (fT) of the BCP54-16E6327 transistor?

    The transition frequency (fT) of the BCP54-16E6327 transistor is 100 MHz.

  5. What package style does the BCP54-16E6327 transistor use?

    The BCP54-16E6327 transistor uses the SOT-223 package style.

  6. Is the BCP54-16E6327 transistor RoHS compliant?

    Yes, the BCP54-16E6327 transistor is RoHS compliant and Pb-free.

  7. What is the peak reflow temperature for the BCP54-16E6327 transistor?

    The peak reflow temperature for the BCP54-16E6327 transistor is 260°C.

  8. What are the typical applications of the BCP54-16E6327 transistor?

    The BCP54-16E6327 transistor is typically used in AF driver and output stages, automotive applications, and general-purpose switching applications.

  9. What is the terminal finish of the BCP54-16E6327 transistor?

    The terminal finish of the BCP54-16E6327 transistor is MATTE TIN.

  10. Is the BCP54-16E6327 transistor suitable for surface mount technology?

    Yes, the BCP54-16E6327 transistor is suitable for surface mount technology due to its SOT-223 package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP54-16E6327 BCP51-16E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W
Frequency - Transition 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223

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