BC847CB5003
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Infineon Technologies BC847CB5003

Manufacturer No:
BC847CB5003
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847C is an NPN silicon AF (Audio Frequency) transistor produced by Infineon Technologies. It is part of the BC847 series, which is designed for general-purpose applications, particularly in audio frequency input stages and driver circuits. This transistor is known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics, making it suitable for a variety of electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Emitter Saturation Voltage VCE(sat) 0.25 - 0.6 V
Collector Current IC 100 mA mA
Peak Collector Current (tp ≤ 10 ms) ICM 200 mA mA
Total Power Dissipation (TS ≤ 71 °C) Ptot 330 mW mW
Junction Temperature Tj 150 °C °C
Storage Temperature Tstg -65 to 150 °C °C
Transition Frequency (fT) fT 250 MHz MHz
Collector-Base Capacitance Ccb 0.95 pF pF
Emitter-Base Capacitance Ceb 9 pF pF

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types available (BC857...-BC860... for PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 (except BC847BL3)

Applications

The BC847C transistor is primarily used in audio frequency input stages and driver applications. Its characteristics make it suitable for a variety of electronic circuits that require high current gain and low noise.

Q & A

  1. What is the BC847C transistor used for?

    The BC847C transistor is used for audio frequency input stages and driver applications.

  2. What are the key features of the BC847C transistor?

    Key features include high current gain, low collector-emitter saturation voltage, low noise between 30 Hz and 15 kHz, and a Pb-free (RoHS compliant) package.

  3. What is the maximum collector-emitter voltage for the BC847C transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  4. What is the maximum collector current for the BC847C transistor?

    The maximum collector current (IC) is 100 mA.

  5. What is the transition frequency (fT) of the BC847C transistor?

    The transition frequency (fT) is 250 MHz.

  6. Is the BC847C transistor RoHS compliant?
  7. What are the complementary types for the BC847C transistor?

    The complementary types for the BC847C are BC857...-BC860... (PNP transistors).

  8. What is the junction temperature range for the BC847C transistor?

    The junction temperature range is up to 150 °C.

  9. What is the storage temperature range for the BC847C transistor?

    The storage temperature range is -65 to 150 °C.

  10. Is the BC847C qualified according to AEC Q101?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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Similar Products

Part Number BC847CB5003 BC847CB5000
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 45 V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V -
Power - Max 330 mW -
Frequency - Transition 250MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package PG-SOT23-3-11 -

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