BC847B-B5003
  • Share:

Infineon Technologies BC847B-B5003

Manufacturer No:
BC847B-B5003
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847B-B5003 is a highly versatile and reliable bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for general-purpose amplification and is particularly suited for audio frequency small signal amplifiers. It features a compact SOT-23-3-11 package, making it ideal for surface mount applications in a variety of electronic projects.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Emitter Breakdown Voltage (Vceo)45 V
Collector Current (Ic) Max100 mA
Vce Saturation (Max) @ Ib, Ic600 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max)15 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2 mA, 5 V
Power - Max330 mW
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Operating Temperature Max150°C (TJ)

Key Features

  • Compact SOT-23-3-11 package for surface mount applications.
  • High collector-emitter breakdown voltage of 45 V.
  • Maximum collector current of 100 mA.
  • Low Vce saturation voltage of 600 mV @ 5 mA, 100 mA.
  • High DC current gain (hFE) of 200 @ 2 mA, 5 V.
  • Maximum power dissipation of 330 mW.
  • Transition frequency of 250 MHz.

Applications

The BC847B-B5003 is widely used in various electronic applications, including:

  • Audio frequency small signal amplifiers.
  • General-purpose amplification circuits.
  • Surface mount designs requiring compact and reliable transistors.
  • Automotive and industrial control systems (with appropriate qualification).

Q & A

  1. What is the transistor type of the BC847B-B5003?
    The BC847B-B5003 is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter breakdown voltage of the BC847B-B5003?
    The maximum collector-emitter breakdown voltage is 45 V.
  3. What is the maximum collector current of the BC847B-B5003?
    The maximum collector current is 100 mA.
  4. What is the Vce saturation voltage of the BC847B-B5003?
    The Vce saturation voltage is 600 mV @ 5 mA, 100 mA.
  5. What is the DC current gain (hFE) of the BC847B-B5003?
    The DC current gain (hFE) is 200 @ 2 mA, 5 V.
  6. What is the maximum power dissipation of the BC847B-B5003?
    The maximum power dissipation is 330 mW.
  7. What is the transition frequency of the BC847B-B5003?
    The transition frequency is 250 MHz.
  8. What is the package type of the BC847B-B5003?
    The package type is SOT-23-3-11.
  9. What is the operating temperature range of the BC847B-B5003?
    The operating temperature range is up to 150°C (TJ).
  10. Where can I find the datasheet for the BC847B-B5003?
    You can find the datasheet on the official Infineon Technologies website or through distributors like Lisleapex, DigiKey, and JLCPCB.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
0 Remaining View Similar

In Stock

$0.02
11,560

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2N5191G
2N5191G
onsemi
TRANS NPN 60V 4A TO126
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
BCP69TA
BCP69TA
Diodes Incorporated
TRANS PNP BIPOL 20V 1A SOT-223
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3

Related Product By Brand

BAS 40-06 B5003
BAS 40-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BAT54B5003
BAT54B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BFS17WH6393XTSA1
BFS17WH6393XTSA1
Infineon Technologies
RF TRANS NPN SOT323-3
BC846AE6433
BC846AE6433
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BTS6143DAUMA1
BTS6143DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
FM25L16B-GTR
FM25L16B-GTR
Infineon Technologies
IC FRAM 16KBIT SPI 20MHZ 8SOIC