BC847B-B5003
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Infineon Technologies BC847B-B5003

Manufacturer No:
BC847B-B5003
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847B-B5003 is a highly versatile and reliable bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for general-purpose amplification and is particularly suited for audio frequency small signal amplifiers. It features a compact SOT-23-3-11 package, making it ideal for surface mount applications in a variety of electronic projects.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Emitter Breakdown Voltage (Vceo)45 V
Collector Current (Ic) Max100 mA
Vce Saturation (Max) @ Ib, Ic600 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max)15 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2 mA, 5 V
Power - Max330 mW
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Operating Temperature Max150°C (TJ)

Key Features

  • Compact SOT-23-3-11 package for surface mount applications.
  • High collector-emitter breakdown voltage of 45 V.
  • Maximum collector current of 100 mA.
  • Low Vce saturation voltage of 600 mV @ 5 mA, 100 mA.
  • High DC current gain (hFE) of 200 @ 2 mA, 5 V.
  • Maximum power dissipation of 330 mW.
  • Transition frequency of 250 MHz.

Applications

The BC847B-B5003 is widely used in various electronic applications, including:

  • Audio frequency small signal amplifiers.
  • General-purpose amplification circuits.
  • Surface mount designs requiring compact and reliable transistors.
  • Automotive and industrial control systems (with appropriate qualification).

Q & A

  1. What is the transistor type of the BC847B-B5003?
    The BC847B-B5003 is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter breakdown voltage of the BC847B-B5003?
    The maximum collector-emitter breakdown voltage is 45 V.
  3. What is the maximum collector current of the BC847B-B5003?
    The maximum collector current is 100 mA.
  4. What is the Vce saturation voltage of the BC847B-B5003?
    The Vce saturation voltage is 600 mV @ 5 mA, 100 mA.
  5. What is the DC current gain (hFE) of the BC847B-B5003?
    The DC current gain (hFE) is 200 @ 2 mA, 5 V.
  6. What is the maximum power dissipation of the BC847B-B5003?
    The maximum power dissipation is 330 mW.
  7. What is the transition frequency of the BC847B-B5003?
    The transition frequency is 250 MHz.
  8. What is the package type of the BC847B-B5003?
    The package type is SOT-23-3-11.
  9. What is the operating temperature range of the BC847B-B5003?
    The operating temperature range is up to 150°C (TJ).
  10. Where can I find the datasheet for the BC847B-B5003?
    You can find the datasheet on the official Infineon Technologies website or through distributors like Lisleapex, DigiKey, and JLCPCB.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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