BC817K-40E6327
  • Share:

Infineon Technologies BC817K-40E6327

Manufacturer No:
BC817K-40E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K-40E6327 is a highly versatile and reliable NPN bipolar transistor produced by Infineon Technologies. This component is part of the BC817K series and is known for its high-performance capabilities, making it an excellent choice for a wide range of electronic projects. The transistor is packaged in a compact SOT-23-3 case, which is ideal for surface-mount technology (SMT) applications. It is designed to offer high current gain, low voltage operation, and low collector-emitter saturation voltage, making it suitable for various electronic circuits.

Key Specifications

Parameter Value Unit
Manufacturer Part # BC817K-40E6327
Package/Case SOT-23-3
Transistor Polarity NPN
Configuration Single
Collector-Emitter Voltage VCEO Max 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 700 mV
Maximum DC Collector Current 500 mA
Power Dissipation Pd 500 mW
Gain Bandwidth Product fT 170 MHz
Minimum Operating Temperature -65°C
Maximum Operating Temperature +150°C
DC Current Gain hfe Min 250 at 100 mA, 1 V
DC Current Gain hFE Max 630 at 100 mA, 1 V
Height 1 mm
Length 2.9 mm
Width 1.3 mm
Factory Pack Quantity 3000
Technology Silicon (Si)
Unit Weight 0.000282 oz

Key Features

  • High Current Gain: The BC817K-40E6327 offers a DC current gain (hFE) ranging from 250 to 630 at 100 mA and 1 V, ensuring reliable amplification in various circuits.
  • Low Voltage Operation: This transistor is designed for low voltage applications, making it suitable for a wide range of electronic projects.
  • Low Collector-Emitter Saturation Voltage: With a collector-emitter saturation voltage of 700 mV, it minimizes power loss and enhances efficiency.
  • High-Frequency Switching: The transistor has a gain bandwidth product (fT) of 170 MHz, making it suitable for high-frequency switching applications.
  • Compact SOT-23-3 Package: The SOT-23-3 package is compact and ideal for surface-mount technology (SMT) applications, saving space on PCBs.
  • Robust Thermal Performance: It has a high power dissipation of 500 mW and operates within a temperature range of -65°C to +150°C, ensuring reliability in varying conditions.
  • RoHS Compliant: The BC817K-40E6327 is lead-free and RoHS compliant, aligning with environmental regulations.
  • High Reliability: It meets industry standard specifications for bipolar transistors and is known for its long operational life and high reliability.

Applications

  • DC-DC Converters: The BC817K-40E6327 is an excellent choice for DC-DC converter circuits due to its high current gain and low saturation voltage.
  • Motor Driver Circuits: Its high current handling and low voltage operation make it suitable for motor driver applications.
  • Consumer Electronics: It is widely used in consumer electronics due to its compact size, high reliability, and energy efficiency.
  • Power Management Circuits: The transistor is used in power management circuits for its ability to handle high currents and operate efficiently.
  • Telecommunications and Signal Processing: Its high-frequency switching capabilities make it suitable for telecommunications and signal processing applications.

Q & A

  1. What is the package type of the BC817K-40E6327?

    The BC817K-40E6327 is packaged in a SOT-23-3 case.

  2. What is the maximum collector-emitter voltage of the BC817K-40E6327?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  3. What is the maximum DC collector current of the BC817K-40E6327?

    The maximum DC collector current is 500 mA.

  4. What is the gain bandwidth product (fT) of the BC817K-40E6327?

    The gain bandwidth product (fT) is 170 MHz.

  5. Is the BC817K-40E6327 RoHS compliant?

    Yes, the BC817K-40E6327 is lead-free and RoHS compliant.

  6. What are the operating temperature ranges for the BC817K-40E6327?

    The operating temperature range is from -65°C to +150°C.

  7. What is the typical DC current gain (hFE) of the BC817K-40E6327?

    The DC current gain (hFE) ranges from 250 to 630 at 100 mA and 1 V.

  8. What are some common applications of the BC817K-40E6327?

    Common applications include DC-DC converters, motor driver circuits, consumer electronics, power management circuits, and telecommunications.

  9. How does the BC817K-40E6327 contribute to energy efficiency in circuits?

    It contributes to energy efficiency through its low collector-emitter saturation voltage and high current gain, minimizing power loss.

  10. Where can I find the datasheet and other technical documents for the BC817K-40E6327?

    Datasheets and other technical documents can be found on the websites of distributors like Lisleapex, Avaq, and Mouser Electronics, as well as on Infineon Technologies' official website.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
385

Please send RFQ , we will respond immediately.

Same Series
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC817K-40E6327 BC818K-40E6327 BC817K-40WE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type - - -
Current - Collector (Ic) (Max) - - -
Voltage - Collector Emitter Breakdown (Max) - - -
Vce Saturation (Max) @ Ib, Ic - - -
Current - Collector Cutoff (Max) - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - -
Power - Max - - -
Frequency - Transition - - -
Operating Temperature - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
BC33725BU
BC33725BU
onsemi
TRANS NPN 45V 0.8A TO92-3
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC857CQCZ
BC857CQCZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1412D-3
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BC857BW/ZLX
BC857BW/ZLX
Nexperia USA Inc.
TRANS SOT323
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223

Related Product By Brand

BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
BAS40-06B5000
BAS40-06B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAS1602WH6327XTSA1
BAS1602WH6327XTSA1
Infineon Technologies
DIODE GEN PURP 80V 200MA SCD80-2
BC857SH6327XTSA1
BC857SH6327XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363-6
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BCX5516H6433XTMA1
BCX5516H6433XTMA1
Infineon Technologies
TRANS NPN 60V 1A SOT89
BC 846B B5003
BC 846B B5003
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BC 807-40W H6433
BC 807-40W H6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
IRF4905STRRPBF
IRF4905STRRPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
FF600R12ME4CB11BPSA1
FF600R12ME4CB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411