BC 807-16W H6327
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Infineon Technologies BC 807-16W H6327

Manufacturer No:
BC 807-16W H6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC 807-16W H6327 is a PNP silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is part of the BC807 series, which is designed for general AF applications. It is known for its high collector current, high current gain, and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.

Key Specifications

Parameter Symbol Values Unit
Collector-emitter breakdown voltage V(BR)CEO 45 V
Collector-base breakdown voltage V(BR)CBO 50 V
Emitter-base breakdown voltage V(BR)EBO 5 V
Collector-base cutoff current ICBO 0.1 µA (max at TA = 150 °C) µA
Collector current IC 1.5 A (max) A
Base current IB 150 mA (max) mA
Power dissipation Ptot 625 mW (max) mW
Junction temperature Tj -55 to 150 °C °C

Key Features

  • High collector current up to 1.5 A
  • High current gain
  • Low collector-emitter saturation voltage
  • Pb-free (RoHS compliant) package
  • Complementary type: BC817.../W, BC818.../W (NPN)

Applications

The BC 807-16W H6327 transistor is suitable for various general AF applications, including audio amplifiers, switching circuits, and other electronic devices that require high current gain and low saturation voltage.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC 807-16W H6327 transistor?

    The collector-emitter breakdown voltage is 45 V.

  2. What is the maximum collector current for this transistor?

    The maximum collector current is 1.5 A.

  3. Is the BC 807-16W H6327 transistor RoHS compliant?
  4. What are the complementary NPN transistors for the BC807 series?

    The complementary NPN transistors are BC817.../W and BC818.../W.

  5. What is the junction temperature range for this transistor?

    The junction temperature range is -55 to 150 °C.

  6. What is the maximum power dissipation for the BC 807-16W H6327 transistor?

    The maximum power dissipation is 625 mW.

  7. Is the BC 807-16W H6327 transistor still in production?

    No, the BC 807-16W H6327 transistor is obsolete and no longer manufactured.

  8. What kind of packaging does the BC 807-16W H6327 transistor come in?

    The transistor comes in anti-static bags with ESD protection.

  9. What are some typical applications for the BC 807-16W H6327 transistor?

    Typical applications include audio amplifiers and other general AF circuits.

  10. Where can I find more detailed specifications for the BC 807-16W H6327 transistor?

    More detailed specifications can be found in the datasheet available from Infineon Technologies or through distributors like Mouser Electronics.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC 807-16W H6327 BC 807-16W E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 250 mW 250 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

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