BAV170E6359HTMA1
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Infineon Technologies BAV170E6359HTMA1

Manufacturer No:
BAV170E6359HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE GP 80V 100MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BAV170E6359HTMA1 is a silicon low-leakage diode array produced by Infineon Technologies. This component is designed for low-leakage applications and features medium speed switching times. It is packaged in a SOT23 configuration with a common cathode setup, making it suitable for a variety of electronic circuits. The diode array is Pb-free and RoHS compliant, and it is qualified according to the AEC-Q101 standard, ensuring its reliability in automotive and other demanding environments.

Key Specifications

Parameter Symbol Value Unit
Diode Reverse Voltage VR 80 V
Peak Reverse Voltage VRM 85 V
Forward Current IF 200 mA
Non-repetitive Peak Surge Forward Current IFSM 4.5 A (t = 1 µs), 0.5 A (t = 1 s) A
Total Power Dissipation (TS ≤ 35°C) Ptot 250 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
Thermal Resistance (Junction - Soldering Point) RthJS ≤ 460 K/W
Forward Voltage (Max) @ IF Vf 1.1 V @ 50 mA V
Reverse Recovery Time trr 1.5 µs µs
Reverse Current @ VR IR 5 nA @ 75 V nA

Key Features

  • Low-Leakage Applications: Suitable for applications requiring low leakage current.
  • Medium Speed Switching Times: Offers medium speed switching, making it versatile for various applications.
  • Pb-free and RoHS Compliant: Environmentally friendly and compliant with RoHS regulations.
  • AEC-Q101 Qualified: Meets the automotive industry's AEC-Q101 standard for reliability and performance.
  • Common Cathode Configuration: Packaged in SOT23 with a common cathode setup.
  • High Junction Temperature: Can operate up to a junction temperature of 150°C.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • General Purpose Rectification: Can be used in various general-purpose rectification applications.
  • Low-Leakage Circuits: Ideal for circuits that require minimal leakage current.
  • Surface Mount Designs: Suitable for surface mount technology due to its SOT23 package.

Q & A

  1. What is the maximum reverse voltage of the BAV170E6359HTMA1? The maximum reverse voltage is 80 V.
  2. What is the forward current rating of the BAV170E6359HTMA1? The forward current rating is 200 mA.
  3. Is the BAV170E6359HTMA1 RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  4. What is the junction temperature range of the BAV170E6359HTMA1? The junction temperature range is up to 150°C.
  5. What is the reverse recovery time of the BAV170E6359HTMA1? The reverse recovery time is 1.5 µs.
  6. What package types are available for the BAV170E6359HTMA1? It is available in TO-236-3, SC-59, and SOT-23-3 packages.
  7. Is the BAV170E6359HTMA1 suitable for automotive applications? Yes, it is qualified according to the AEC-Q101 standard.
  8. What is the maximum forward voltage at 50 mA for the BAV170E6359HTMA1? The maximum forward voltage at 50 mA is 1.1 V.
  9. What is the thermal resistance of the BAV170E6359HTMA1? The thermal resistance (junction to soldering point) is ≤ 460 K/W.
  10. Is the BAV170E6359HTMA1 still in production? No, the BAV170E6359HTMA1 is obsolete and no longer manufactured.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):100mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 50 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):1.5 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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$1.26
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