Overview
The BAV170E6433HTMA1, produced by Infineon Technologies, is a silicon low-leakage diode array designed for various electronic applications. This component is packaged in a SOT-23-3 configuration, making it suitable for surface mount technology (SMT). It is RoHS compliant and lead-free, ensuring environmental sustainability. The diode array is qualified according to AEC Q101 standards, indicating its reliability and performance in automotive and industrial environments.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Diode Reverse Voltage | VR | 80 | V |
| Peak Reverse Voltage | VRM | 85 | V |
| Forward Current | IF | 200 | mA |
| Non-repetitive Peak Surge Forward Current (t = 1 µs) | IFSM | 4.5 | A |
| Total Power Dissipation (TS ≤ 35°C) | Ptot | 250 | mW |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature | Tstg | -65 to 150 | °C |
| Thermal Resistance (Junction - Soldering Point) | RthJS | ≤ 460 | K/W |
| Breakdown Voltage (I(BR) = 100 µA) | V(BR) | 85 | V |
| Reverse Current (VR = 75 V, TA = 150 °C) | IR | 80 | nA |
| Forward Voltage (IF = 1 mA, 10 mA, 50 mA, 150 mA) | VF | 900, 1000, 1100, 1250 | mV |
| Diode Capacitance (VR = 0 V, f = 1 MHz) | CT | 2 | pF |
| Reverse Recovery Time (IF = 10 mA, IR = 10 mA, RL = 100 Ω) | trr | 0.6 to 1.5 | µs |
Key Features
- Low-leakage applications: Ideal for scenarios where minimal leakage current is crucial.
- Medium speed switching times: Suitable for applications requiring moderate switching speeds.
- Pb-free (RoHS compliant) package: Environmentally friendly and compliant with regulatory standards.
- Qualified according to AEC Q101: Ensures reliability and performance in automotive and industrial environments.
- Common cathode configuration: Simplifies circuit design and reduces component count.
Applications
The BAV170E6433HTMA1 is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC Q101 qualification, it is suitable for use in automotive electronics.
- Industrial control systems: Its medium speed switching and low-leakage characteristics make it ideal for industrial control circuits.
- Consumer electronics: Can be used in various consumer electronic devices where low leakage and moderate switching speeds are required.
- Power supplies: Useful in power supply circuits where efficient diode performance is necessary.
Q & A
- What is the maximum reverse voltage of the BAV170E6433HTMA1?
The maximum reverse voltage (VRM) is 85 V. - What is the forward current rating of this diode array?
The forward current (IF) is rated at 200 mA. - Is the BAV170E6433HTMA1 RoHS compliant?
Yes, it is Pb-free and RoHS compliant. - What is the junction temperature range for this component?
The junction temperature (Tj) range is up to 150°C. - What are the typical applications for the BAV170E6433HTMA1?
It is used in automotive systems, industrial control systems, consumer electronics, and power supplies. - What is the thermal resistance of the BAV170E6433HTMA1?
The thermal resistance (RthJS) is ≤ 460 K/W. - What is the breakdown voltage of the BAV170E6433HTMA1?
The breakdown voltage (V(BR)) is 85 V at I(BR) = 100 µA. - How does the reverse current of the BAV170E6433HTMA1 vary with temperature?
The reverse current (IR) increases with temperature, with a maximum of 80 nA at VR = 75 V and TA = 150 °C. - What is the reverse recovery time of the BAV170E6433HTMA1?
The reverse recovery time (trr) is between 0.6 and 1.5 µs. - Is the BAV170E6433HTMA1 suitable for life-support devices?
No, it is not recommended for use in life-support devices or systems without the express written approval of Infineon Technologies.
