BAV170E6327HTSA1
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Infineon Technologies BAV170E6327HTSA1

Manufacturer No:
BAV170E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT23
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BAV170E6327HTSA1 is a silicon low-leakage diode array produced by Infineon Technologies. This component is designed for low-leakage applications and features medium speed switching times, making it suitable for a variety of electronic circuits. The diode array is packaged in a SOT-23 (SC-59) surface mount configuration, which is Pb-free and RoHS compliant. It is also qualified according to AEC Q101 standards, ensuring high reliability and performance in automotive and industrial applications.

Key Specifications

ParameterSymbolValueUnit
Diode Reverse VoltageVR80V
Peak Reverse VoltageVRM85V
Forward CurrentIF200mA
Non-repetitive Peak Surge Forward Current (t = 1 µs)IFSM4.5A
Total Power Dissipation (TS ≤ 35°C)Ptot250mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Forward Voltage (IF = 150 mA)VF1250mV
Reverse Recovery Timetrr0.6 to 1.5µs

Key Features

  • Low-leakage applications
  • Medium speed switching times
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 standards
  • Common cathode configuration in SOT-23 package
  • High reliability and performance in automotive and industrial applications

Applications

The BAV170E6327HTSA1 diode array is suitable for various applications requiring low leakage and medium speed switching. These include:

  • Automotive electronics
  • Industrial control systems
  • Power supply circuits
  • General-purpose switching applications

Q & A

  1. What is the package type of the BAV170E6327HTSA1? The BAV170E6327HTSA1 is packaged in a SOT-23 (SC-59) surface mount configuration.
  2. What is the maximum forward current of the BAV170E6327HTSA1? The maximum forward current is 200 mA.
  3. Is the BAV170E6327HTSA1 RoHS compliant? Yes, the BAV170E6327HTSA1 is Pb-free and RoHS compliant.
  4. What are the typical applications of the BAV170E6327HTSA1? It is used in automotive electronics, industrial control systems, power supply circuits, and general-purpose switching applications.
  5. What is the maximum junction temperature of the BAV170E6327HTSA1? The maximum junction temperature is 150°C.
  6. What is the reverse recovery time of the BAV170E6327HTSA1? The reverse recovery time is between 0.6 and 1.5 microseconds.
  7. Is the BAV170E6327HTSA1 qualified according to any specific standards? Yes, it is qualified according to AEC Q101 standards.
  8. What is the total power dissipation of the BAV170E6327HTSA1 at TS ≤ 35°C? The total power dissipation is 250 mW.
  9. What is the storage temperature range for the BAV170E6327HTSA1? The storage temperature range is -65 to 150°C.
  10. What is the forward voltage of the BAV170E6327HTSA1 at IF = 150 mA? The forward voltage is 1250 mV.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):1.5 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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In Stock

$0.38
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