BAV170E6327HTSA1
  • Share:

Infineon Technologies BAV170E6327HTSA1

Manufacturer No:
BAV170E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV170E6327HTSA1 is a silicon low-leakage diode array produced by Infineon Technologies. This component is designed for low-leakage applications and features medium speed switching times, making it suitable for a variety of electronic circuits. The diode array is packaged in a SOT-23 (SC-59) surface mount configuration, which is Pb-free and RoHS compliant. It is also qualified according to AEC Q101 standards, ensuring high reliability and performance in automotive and industrial applications.

Key Specifications

ParameterSymbolValueUnit
Diode Reverse VoltageVR80V
Peak Reverse VoltageVRM85V
Forward CurrentIF200mA
Non-repetitive Peak Surge Forward Current (t = 1 µs)IFSM4.5A
Total Power Dissipation (TS ≤ 35°C)Ptot250mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Forward Voltage (IF = 150 mA)VF1250mV
Reverse Recovery Timetrr0.6 to 1.5µs

Key Features

  • Low-leakage applications
  • Medium speed switching times
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 standards
  • Common cathode configuration in SOT-23 package
  • High reliability and performance in automotive and industrial applications

Applications

The BAV170E6327HTSA1 diode array is suitable for various applications requiring low leakage and medium speed switching. These include:

  • Automotive electronics
  • Industrial control systems
  • Power supply circuits
  • General-purpose switching applications

Q & A

  1. What is the package type of the BAV170E6327HTSA1? The BAV170E6327HTSA1 is packaged in a SOT-23 (SC-59) surface mount configuration.
  2. What is the maximum forward current of the BAV170E6327HTSA1? The maximum forward current is 200 mA.
  3. Is the BAV170E6327HTSA1 RoHS compliant? Yes, the BAV170E6327HTSA1 is Pb-free and RoHS compliant.
  4. What are the typical applications of the BAV170E6327HTSA1? It is used in automotive electronics, industrial control systems, power supply circuits, and general-purpose switching applications.
  5. What is the maximum junction temperature of the BAV170E6327HTSA1? The maximum junction temperature is 150°C.
  6. What is the reverse recovery time of the BAV170E6327HTSA1? The reverse recovery time is between 0.6 and 1.5 microseconds.
  7. Is the BAV170E6327HTSA1 qualified according to any specific standards? Yes, it is qualified according to AEC Q101 standards.
  8. What is the total power dissipation of the BAV170E6327HTSA1 at TS ≤ 35°C? The total power dissipation is 250 mW.
  9. What is the storage temperature range for the BAV170E6327HTSA1? The storage temperature range is -65 to 150°C.
  10. What is the forward voltage of the BAV170E6327HTSA1 at IF = 150 mA? The forward voltage is 1250 mV.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):1.5 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.38
1,332

Please send RFQ , we will respond immediately.

Same Series
BAV170E6327HTSA1
BAV170E6327HTSA1
DIODE ARRAY GP 80V 200MA SOT23
BAV170E6433HTMA1
BAV170E6433HTMA1
DIODE ARRAY GP 80V 200MA SOT23

Related Product By Categories

BAV99_R1_00001
BAV99_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAV 70W H6327
BAV 70W H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV99DW-7-F
BAV99DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT363
SBAV99WT1G
SBAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SOT323
STPS30L60CW
STPS30L60CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V TO247-3
BAV99S/MI115
BAV99S/MI115
NXP USA Inc.
RECTIFIER DIODE
BAV99W/DG/B3135
BAV99W/DG/B3135
NXP USA Inc.
NEXPERIA BAV99 - DUAL HIGH-SPEE
1PS76SB21
1PS76SB21
Nexperia USA Inc.
NOW NEXPERIA 1PS76SB21 - RECTIFI
MUR3060WT
MUR3060WT
onsemi
DIODE ARRAY GP 600V 15A TO247
BAV74_D87Z
BAV74_D87Z
onsemi
DIODE ARRAY GP 50V 200MA SOT23-3
BAV 99W H6433
BAV 99W H6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAT54A-QVL
BAT54A-QVL
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BCX5516H6433XTMA1
BCX5516H6433XTMA1
Infineon Technologies
TRANS NPN 60V 1A SOT89
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BSS138W E6327
BSS138W E6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BTS428L2ATMA1
BTS428L2ATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
BSP78E6327
BSP78E6327
Infineon Technologies
POWER SWITCH SMART LOW
TLE73682EXUMA1
TLE73682EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36
FM28V100-TG
FM28V100-TG
Infineon Technologies
IC FRAM 1MBIT PARALLEL 32TSOP I