BAV170E6327HTSA1
  • Share:

Infineon Technologies BAV170E6327HTSA1

Manufacturer No:
BAV170E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV170E6327HTSA1 is a silicon low-leakage diode array produced by Infineon Technologies. This component is designed for low-leakage applications and features medium speed switching times, making it suitable for a variety of electronic circuits. The diode array is packaged in a SOT-23 (SC-59) surface mount configuration, which is Pb-free and RoHS compliant. It is also qualified according to AEC Q101 standards, ensuring high reliability and performance in automotive and industrial applications.

Key Specifications

ParameterSymbolValueUnit
Diode Reverse VoltageVR80V
Peak Reverse VoltageVRM85V
Forward CurrentIF200mA
Non-repetitive Peak Surge Forward Current (t = 1 µs)IFSM4.5A
Total Power Dissipation (TS ≤ 35°C)Ptot250mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Forward Voltage (IF = 150 mA)VF1250mV
Reverse Recovery Timetrr0.6 to 1.5µs

Key Features

  • Low-leakage applications
  • Medium speed switching times
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 standards
  • Common cathode configuration in SOT-23 package
  • High reliability and performance in automotive and industrial applications

Applications

The BAV170E6327HTSA1 diode array is suitable for various applications requiring low leakage and medium speed switching. These include:

  • Automotive electronics
  • Industrial control systems
  • Power supply circuits
  • General-purpose switching applications

Q & A

  1. What is the package type of the BAV170E6327HTSA1? The BAV170E6327HTSA1 is packaged in a SOT-23 (SC-59) surface mount configuration.
  2. What is the maximum forward current of the BAV170E6327HTSA1? The maximum forward current is 200 mA.
  3. Is the BAV170E6327HTSA1 RoHS compliant? Yes, the BAV170E6327HTSA1 is Pb-free and RoHS compliant.
  4. What are the typical applications of the BAV170E6327HTSA1? It is used in automotive electronics, industrial control systems, power supply circuits, and general-purpose switching applications.
  5. What is the maximum junction temperature of the BAV170E6327HTSA1? The maximum junction temperature is 150°C.
  6. What is the reverse recovery time of the BAV170E6327HTSA1? The reverse recovery time is between 0.6 and 1.5 microseconds.
  7. Is the BAV170E6327HTSA1 qualified according to any specific standards? Yes, it is qualified according to AEC Q101 standards.
  8. What is the total power dissipation of the BAV170E6327HTSA1 at TS ≤ 35°C? The total power dissipation is 250 mW.
  9. What is the storage temperature range for the BAV170E6327HTSA1? The storage temperature range is -65 to 150°C.
  10. What is the forward voltage of the BAV170E6327HTSA1 at IF = 150 mA? The forward voltage is 1250 mV.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):1.5 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.38
1,332

Please send RFQ , we will respond immediately.

Same Series
BAV170E6327HTSA1
BAV170E6327HTSA1
DIODE ARRAY GP 80V 200MA SOT23
BAV170E6433HTMA1
BAV170E6433HTMA1
DIODE ARRAY GP 80V 200MA SOT23

Related Product By Categories

MBR20100CT-G1
MBR20100CT-G1
Diodes Incorporated
DIODE SCHOTTKY 100V 10A TO220AB
BAS40AW-AU_R1_000A1
BAS40AW-AU_R1_000A1
Panjit International Inc.
SOT-323, SKY
BAV99STB6_R1_00001
BAV99STB6_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BAV70E6767
BAV70E6767
Infineon Technologies
GENERAL PURPOSE HIGH SPEED SWITC
SB05W05C-TB-E
SB05W05C-TB-E
onsemi
DIODE ARRAY SCHOTTKY 50V 3CP
STPS61170CW
STPS61170CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V TO247
BAV99STB6-AU_R1_000A1
BAV99STB6-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BYQ28EB-150HE3_A/P
BYQ28EB-150HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A TO263AB
BAW56SB6327XT
BAW56SB6327XT
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
MBRB2545CTG
MBRB2545CTG
onsemi
DIODE ARRAY SCHOTTKY 45V D2PAK
BAS40-05-7-F-79
BAS40-05-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAV199DW-13-F
BAV199DW-13-F
Diodes Incorporated
DIODE ARRAY GP 85V 140MA SOT363

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BC807-16WE6327
BC807-16WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
TLD5098ELXUMA1
TLD5098ELXUMA1
Infineon Technologies
IC LED DRIVER CTRLR PWM 14SSOP
BTS428L2ATMA1
BTS428L2ATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
TLE73682EXUMA1
TLE73682EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36