BC859C
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Diotec Semiconductor BC859C

Manufacturer No:
BC859C
Manufacturer:
Diotec Semiconductor
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC859C is a General Purpose Bipolar Junction Transistor (GP BJT) manufactured by Diotec Semiconductor AG. It is optimized for high-speed and low-voltage operations, making it suitable for a variety of applications. This transistor is packaged in a surface-mount SOT-23 package, which is ideal for compact designs and efficient use of space. The BC859C provides excellent performance for both analog and digital signal switching and processing.

Key Specifications

Parameter Value
Manufacturer Diotec Semiconductor AG
Package/Case SOT-23 (TO-236)
Type of Transistor PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) -30 V
Collector Current (IC) -100 mA
Power Dissipation (Ptot) 250 mW
Current Gain (hFE) 180 to 520
Frequency 100 MHz
Junction Temperature (Tj) -55°C to 150°C
Mounting Surface Mount (SMD)

Key Features

  • High-Speed Operation: The BC859C is designed for high-speed applications, making it suitable for digital signal processing and switching.
  • Low-Voltage Operation: It is optimized for low-voltage operations, which is beneficial in various modern electronic circuits.
  • High Collector-Emitter Voltage: The transistor has a maximum collector-emitter voltage of -30V, making it suitable for applications requiring high voltage handling.
  • Current Rating: The transistor has a current rating of -100 mA, allowing for efficient switching and amplification.
  • Compliance with Standards: The BC859C is compliant with RoHS and REACH standards, and it is also available in AEC-Q101 qualified versions.

Applications

  • Analog Signal Switching: The BC859C can be used to switch analog signals in applications such as audio amplifiers and filters.
  • Digital Signal Processing: Its high-speed performance makes it suitable for digital signal processing applications, including data converters and logic gates.
  • Automotive Industry: The transistor is also used in the automotive industry due to its reliability and compliance with automotive standards like AEC-Q101.
  • General Purpose Amplification and Switching: It can be used in various general-purpose amplification and switching applications where high-speed and low-voltage operations are required.

Q & A

  1. What is the package type of the BC859C transistor?

    The BC859C transistor is packaged in a surface-mount SOT-23 (TO-236) package.

  2. What is the maximum collector-emitter voltage of the BC859C?

    The maximum collector-emitter voltage (VCEO) of the BC859C is -30 V.

  3. What is the current rating of the BC859C transistor?

    The BC859C transistor has a current rating of -100 mA.

  4. What are the typical applications of the BC859C transistor?

    The BC859C is typically used in analog signal switching, digital signal processing, and general-purpose amplification and switching applications.

  5. Is the BC859C compliant with automotive standards?

    Yes, the BC859C is available in versions that are AEC-Q101 qualified, making it suitable for automotive applications.

  6. What is the junction temperature range of the BC859C transistor?

    The junction temperature range of the BC859C is -55°C to 150°C.

  7. What is the power dissipation of the BC859C transistor?

    The power dissipation (Ptot) of the BC859C is 250 mW.

  8. Is the BC859C compliant with RoHS and REACH standards?

    Yes, the BC859C is compliant with RoHS and REACH standards.

  9. What is the frequency range of the BC859C transistor?

    The BC859C transistor has a frequency range of up to 100 MHz.

  10. Can the BC859C be used in high-speed applications?

    Yes, the BC859C is designed for high-speed operations, making it suitable for digital signal processing and other high-speed applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC859C BC859CW BC858C BC859-C BC859A BC859B
Manufacturer Diotec Semiconductor Diotec Semiconductor Fairchild Semiconductor Infineon Technologies Diotec Semiconductor Fairchild Semiconductor
Product Status Active Active Obsolete Active Active Active
Transistor Type PNP PNP PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 200 mW 380 mW 250 mW 250 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-323 SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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