BCP55-10
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Diotec Semiconductor BCP55-10

Manufacturer No:
BCP55-10
Manufacturer:
Diotec Semiconductor
Package:
Box
Description:
TRANS NPN 60V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP55-10 is a bipolar junction transistor (BJT) manufactured by Diotec Semiconductor. It is part of the BCP5 series and is designed for control and signal processing applications. This NPN transistor is housed in a SOT-223 package, which provides efficient cooling and is suitable for surface mount technology. The BCP55-10 is characterized by its high collector current and voltage ratings, making it versatile for various electronic circuits.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector Emitter Voltage (Vceo)60 V
Collector Current (Ic)1 A
Vce Saturation (Max) @ Ib, Ic500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150 mA, 2 V
Power Dissipation (Max)1.5 W
Transition Frequency100 MHz
Operating Temperature-55°C to 150°C (TJ)
Mounting TypeSurface Mount
PackageSOT-223

Key Features

  • High collector current of 1 A and collector emitter voltage of 60 V, making it suitable for a wide range of applications.
  • Surface mount SOT-223 package for efficient cooling and compact design.
  • High transition frequency of 100 MHz, suitable for high-frequency applications.
  • Wide operating temperature range from -55°C to 150°C.
  • Compliant with RoHS and REACH regulations.

Applications

The BCP55-10 is versatile and can be used in various applications, including:

  • Control and signal processing circuits.
  • Power switching and amplification.
  • LED driver circuits.
  • Automotive and industrial control systems.
  • High-frequency applications such as audio amplifiers and radio frequency circuits.

Q & A

  1. What is the collector current rating of the BCP55-10?
    The collector current rating of the BCP55-10 is 1 A.
  2. What is the maximum collector emitter voltage of the BCP55-10?
    The maximum collector emitter voltage is 60 V.
  3. What is the transition frequency of the BCP55-10?
    The transition frequency is 100 MHz.
  4. What is the operating temperature range of the BCP55-10?
    The operating temperature range is from -55°C to 150°C.
  5. Is the BCP55-10 RoHS and REACH compliant?
    Yes, the BCP55-10 is compliant with RoHS and REACH regulations.
  6. What is the package type of the BCP55-10?
    The BCP55-10 is housed in a SOT-223 package.
  7. What is the power dissipation rating of the BCP55-10?
    The power dissipation rating is 1.5 W.
  8. How do I order the BCP55-10?
    You can order the BCP55-10 through authorized distributors or online retailers by selecting the product and proceeding to the checkout.
  9. What is the warranty period for the BCP55-10?
    The warranty period varies by distributor, but typically includes a 1-year warranty for defects in materials and workmanship.
  10. How can I ensure the authenticity of the BCP55-10?
    Ensure you purchase from authorized distributors or reputable sources that verify the credentials of the manufacturers and suppliers.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.3 W
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP55-10 BCP56-10 BCP55-16 BCP53-10
Manufacturer Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor
Product Status Active Active Active Active
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 500mA, 2V
Power - Max 1.3 W 2 W 1.3 W 1.3 W
Frequency - Transition 100MHz 100MHz 100MHz 120MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223

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