BCP55-16
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Diotec Semiconductor BCP55-16

Manufacturer No:
BCP55-16
Manufacturer:
Diotec Semiconductor
Package:
Box
Description:
TRANS NPN 60V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP55-16 is a high-current NPN bipolar junction transistor (BJT) manufactured by Diotec Semiconductor. It is designed for use in surface mount technology (SMT) and is housed in the SOT-223 package. This transistor is suitable for various applications requiring high collector current, low saturation voltage, and multiple current gain groups. It is compliant with RoHS, REACH, and Conflict Minerals regulations, making it a reliable choice for both commercial and industrial use.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Peak Collector Current (ICM) 1.5 A
Base Current (IB) 100 mA
Peak Base Current (IBM) 200 mA
Junction Temperature (Tj) -55 to +150 °C
Power Dissipation (Ptot) 2 W
Current Gain (hFE) 100 to 250 -
Collector-Emitter Saturation Voltage (VCEsat) 0.5 V
Base-Emitter Voltage (VBE) 1 V
Gain-Bandwidth Product (fT) 100 MHz -
Package SOT-223 -

Key Features

  • High collector current up to 1 A and peak collector current up to 1.5 A.
  • Low saturation voltage (VCEsat) of 0.5 V.
  • Multiple current gain groups (hFE: 100 to 250).
  • High junction temperature range (-55°C to +150°C).
  • Power dissipation of 2 W.
  • Compliant with RoHS, REACH, and Conflict Minerals regulations.
  • AEC-Q101 compliant (suffix -Q) or in AEC-Q101 qualification (suffix -AQ).

Applications

  • Signal processing.
  • Switching applications.
  • Amplification.
  • Automotive industry (for the -AQ version).
  • Commercial and industrial grade applications.

Q & A

  1. What is the maximum collector current of the BCP55-16 transistor?

    The maximum collector current is 1 A, with a peak collector current of 1.5 A.

  2. What is the collector-emitter voltage (VCEO) of the BCP55-16?

    The collector-emitter voltage (VCEO) is 60 V.

  3. What are the current gain groups for the BCP55-16 transistor?

    The current gain (hFE) ranges from 100 to 250.

  4. Is the BCP55-16 compliant with automotive standards?

    Yes, the -AQ version is in AEC-Q101 qualification.

  5. What is the power dissipation of the BCP55-16 transistor?

    The power dissipation (Ptot) is 2 W.

  6. What is the junction temperature range of the BCP55-16?

    The junction temperature range is -55°C to +150°C.

  7. What package type is used for the BCP55-16 transistor?

    The transistor is housed in the SOT-223 package.

  8. Is the BCP55-16 compliant with environmental regulations?

    Yes, it is compliant with RoHS, REACH, and Conflict Minerals regulations.

  9. What are typical applications for the BCP55-16 transistor?

    Typical applications include signal processing, switching, and amplification.

  10. What is the gain-bandwidth product (fT) of the BCP55-16 transistor?

    The gain-bandwidth product (fT) is 100 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1.3 W
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP55-16 BCP56-16 BCP55-6 BCP55-16F BCP52-16 BCP53-16 BCP55-10
Manufacturer Diotec Semiconductor STMicroelectronics Diotec Semiconductor Nexperia USA Inc. Infineon Technologies STMicroelectronics Diotec Semiconductor
Product Status Active Active Active Active Obsolete Active Active
Transistor Type NPN NPN NPN NPN PNP PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 60 V 60 V 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.3 W 1.6 W 1.3 W 650 mW 1.4 W 1.6 W 1.3 W
Frequency - Transition 100MHz - 100MHz 100MHz 50MHz 50MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223

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