BC856BQ-7-F
  • Share:

Diodes Incorporated BC856BQ-7-F

Manufacturer No:
BC856BQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
GENERAL PURPOSE TRANSISTOR SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BQ-7-F is a PNP small-signal transistor produced by Diodes Incorporated. It is part of the BC856AQ – BC857BQ family and is housed in a SOT23 package. This transistor is designed for various applications, including switching and audio frequency (AF) amplifier uses. It is also suitable for automotive applications, being AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Voltage VCBO -80 V IC = -10µA
Collector-Emitter Voltage VCEO -65 V IC = -10mA
Emitter-Base Voltage VEBO -5.0 V IE = -1µA
Continuous Collector Current IC -100 mA
Peak Collector Current ICM -200 mA
Peak Emitter Current IEM -200 mA
Peak Base Current IBM -200 mA
Power Dissipation PD 310 mW
Thermal Resistance, Junction to Ambient RθJA 403 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
DC Current Gain hFE 125 - 250 IC = -2.0mA, VCE = -5V
Collector-Emitter Saturation Voltage VCE(sat) -75 to -300 mV IC = -10mA, IB = -0.5mA

Key Features

  • Ideally suited for automatic insertion
  • Complementary NPN types: BC846 – BC848 family
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, 'Green' device
  • Suitable for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities
  • Package: SOT23, Molded Plastic with UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity Level 1 per J-STD-020

Applications

  • Switching applications
  • Audio frequency (AF) amplifier applications
  • Automotive applications requiring specific change control

Q & A

  1. What is the package type of the BC856BQ-7-F transistor?

    The BC856BQ-7-F transistor is housed in a SOT23 package.

  2. What are the complementary NPN types for the BC856BQ-7-F transistor?

    The complementary NPN types are the BC846 – BC848 family.

  3. What is the maximum collector-emitter voltage for the BC856BQ-7-F transistor?

    The maximum collector-emitter voltage (VCEO) is -65 V.

  4. What is the continuous collector current rating for the BC856BQ-7-F transistor?

    The continuous collector current rating is -100 mA.

  5. Is the BC856BQ-7-F transistor RoHS compliant?

    Yes, the BC856BQ-7-F transistor is totally lead-free and fully RoHS compliant.

  6. What is the operating and storage temperature range for the BC856BQ-7-F transistor?

    The operating and storage temperature range is -65 to +150 °C.

  7. What is the DC current gain (hFE) for the BC856BQ-7-F transistor?

    The DC current gain (hFE) is 125 to 250 at IC = -2.0mA and VCE = -5V.

  8. Is the BC856BQ-7-F transistor suitable for automotive applications?

    Yes, it is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified.

  9. What is the thermal resistance, junction to ambient (RθJA), for the BC856BQ-7-F transistor?

    The thermal resistance, junction to ambient (RθJA), is 403 °C/W.

  10. What is the collector-emitter saturation voltage (VCE(sat)) for the BC856BQ-7-F transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -75 to -300 mV at IC = -10mA and IB = -0.5mA.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:310 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.03
6,688

Please send RFQ , we will respond immediately.

Same Series
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC856BQ-7-F BC856BW-7-F BC856B-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA (ICBO) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 310 mW 200 mW 300 mW
Frequency - Transition 200MHz 200MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3

Related Product By Categories

MMBT100
MMBT100
onsemi
TRANS NPN 45V 0.5A SOT23-3
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
BC857CQCZ
BC857CQCZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1412D-3
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAV23S-7
BAV23S-7
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
BAV170T-7
BAV170T-7
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT523
BAS40BRW-7
BAS40BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
MBR10100CS2TR-E1
MBR10100CS2TR-E1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO263
BAT54SW-7-G
BAT54SW-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT323
BZX84C3V3S-7-F
BZX84C3V3S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.3V SOT363
BZX84C12S-7-F
BZX84C12S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 12V SOT363
BZT52HC6V2WF-7
BZT52HC6V2WF-7
Diodes Incorporated
DIODE ZENER 6.2V 375MW SOD123F
BZX84C30T-7-F
BZX84C30T-7-F
Diodes Incorporated
DIODE ZENER 30V 150MW SOT523
BC847BWQ-13-F
BC847BWQ-13-F
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT32
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
BSS123ATA
BSS123ATA
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3