1N5711W-7
  • Share:

Diodes Incorporated 1N5711W-7

Manufacturer No:
1N5711W-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 70V 333MW SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5711W-7-F is a surface mount Schottky barrier diode produced by Diodes Incorporated. This diode is designed for high-performance applications requiring low forward voltage drop, fast switching times, and robust transient protection. It is packaged in the SOD123 format, making it ideal for automated insertion and suitable for a wide range of electronic systems.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM70V
Working Peak Reverse VoltageVRWM70V
DC Blocking VoltageVR70V
RMS Reverse VoltageVR(RMS)49V
Maximum Forward CurrentIFM15mA
Power DissipationPD333mW
Thermal Resistance, Junction to Ambient AirRθJA300°C/W
Operating Temperature RangeTJ-55 to +125°C
Storage Temperature RangeTSTG-55 to +150°C
Forward Voltage DropVF0.41 to 1.00V
Reverse Leakage CurrentIR≤ 200nA
Total CapacitanceCT≤ 2.0pF
Reverse Recovery Timetrr≤ 1.0ns

Key Features

  • Low forward voltage drop
  • Guard ring construction for transient protection
  • Fast switching time
  • Low reverse capacitance
  • Surface mount package (SOD123) suitable for automated insertion
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, 'Green' device
  • Molded plastic package with UL flammability classification rating 94V-0
  • Matte tin plated leads, solderable per MIL-STD-202, Method 208

Applications

The 1N5711W-7-F Schottky diode is versatile and can be used in various applications, including:

  • RF and microwave circuits
  • High-frequency switching applications
  • Automotive systems requiring specific change control and compliance with AEC-Q100/101/104/200 standards
  • General-purpose rectification and voltage regulation
  • Circuits requiring low forward voltage drop and fast switching times

Q & A

  1. What is the peak repetitive reverse voltage of the 1N5711W-7-F diode?
    The peak repetitive reverse voltage (VRRM) is 70 V.
  2. What is the maximum forward current rating of the 1N5711W-7-F?
    The maximum forward current (IFM) is 15 mA.
  3. What is the typical forward voltage drop of the 1N5711W-7-F diode?
    The forward voltage drop (VF) ranges from 0.41 V to 1.00 V.
  4. Is the 1N5711W-7-F diode RoHS compliant?
    Yes, the 1N5711W-7-F is totally lead-free and fully RoHS compliant.
  5. What is the operating temperature range of the 1N5711W-7-F diode?
    The operating temperature range is -55°C to +125°C.
  6. What is the storage temperature range for the 1N5711W-7-F diode?
    The storage temperature range is -55°C to +150°C.
  7. What is the thermal resistance, junction to ambient air, for the 1N5711W-7-F diode?
    The thermal resistance (RθJA) is 300 °C/W.
  8. Is the 1N5711W-7-F diode suitable for automotive applications?
    Yes, it is suitable for automotive applications requiring specific change control and compliance with AEC-Q100/101/104/200 standards.
  9. What is the package type of the 1N5711W-7-F diode?
    The package type is SOD123.
  10. Is the 1N5711W-7-F diode halogen and antimony free?
    Yes, it is halogen and antimony free, classified as a 'Green' device.

Product Attributes

Diode Type:Schottky - Single
Voltage - Peak Reverse (Max):70V
Current - Max:15 mA
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Resistance @ If, F:- 
Power Dissipation (Max):333 mW
Operating Temperature:-55°C ~ 125°C (TJ)
Package / Case:SOD-123
Supplier Device Package:SOD-123
0 Remaining View Similar

In Stock

-
230

Please send RFQ , we will respond immediately.

Same Series
1N5711W-7
1N5711W-7
DIODE SCHOTTKY 70V 333MW SOD123

Similar Products

Part Number 1N5711W-7 1N5711WS-7
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Discontinued at Digi-Key Obsolete
Diode Type Schottky - Single Schottky - Single
Voltage - Peak Reverse (Max) 70V 70V
Current - Max 15 mA 15 mA
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Resistance @ If, F - -
Power Dissipation (Max) 333 mW 150 mW
Operating Temperature -55°C ~ 125°C (TJ) -55°C ~ 125°C (TJ)
Package / Case SOD-123 SC-76, SOD-323
Supplier Device Package SOD-123 SOD-323

Related Product By Categories

MMBD352WT1G
MMBD352WT1G
onsemi
RF DIODE SCHOTTKY 7V 200MW SC70
BLC6G27LS-100,118
BLC6G27LS-100,118
NXP Semiconductors
BLC6G27LS-100 - RF POWER DISCRET
MMBD330T1G
MMBD330T1G
onsemi
DIODE SCHOTTKY 30V 120MW SC70-3
1N5711WS-7-F
1N5711WS-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
1PS79SB17,115
1PS79SB17,115
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V SOD523
BAP65-02,135
BAP65-02,135
NXP USA Inc.
RF DIODE PIN 30V 715MW SOD523
BA891,115
BA891,115
NXP USA Inc.
DIODE STANDARD 35V 715MW SOD523
BAP50-05W,115
BAP50-05W,115
NXP USA Inc.
PIN DIODE, 50V
BAP64-05W,135
BAP64-05W,135
NXP USA Inc.
RF DIODE PIN 100V 240MW SOT323-3
BAP64-05W,115
BAP64-05W,115
NXP USA Inc.
RF DIODE PIN 100V 240MW SOT323
MMBV3401LT1G
MMBV3401LT1G
onsemi
RF DIODE PIN 35V 200MW SOT23-3
1N5711W-13
1N5711W-13
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123

Related Product By Brand

BAT54V-7
BAT54V-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT563
BAW56-7-F
BAW56-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAV23SQ-13-F
BAV23SQ-13-F
Diodes Incorporated
DIODE ARRAY GP 200V SOT23-3
1N5819HW-7-F
1N5819HW-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SOD123
BAT760-7
BAT760-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SOD323
BAS21T-7-F
BAS21T-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BAS21T-7
BAS21T-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BAS16-7-G
BAS16-7-G
Diodes Incorporated
DIODE GEN PURP SOT23-3
BZX84C2V7T-7-F
BZX84C2V7T-7-F
Diodes Incorporated
DIODE ZENER 2.7V 150MW SOT523
BZX84C6V2-7-F-31
BZX84C6V2-7-F-31
Diodes Incorporated
DIODE ZENER 6.2V 300MW SOT23
BC846BWQ-7-F
BC846BWQ-7-F
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT32
74HC595T16-13
74HC595T16-13
Diodes Incorporated
HC HIGH PIN COUNT TSSOP-16