2N2907A PBFREE
  • Share:

Central Semiconductor Corp 2N2907A PBFREE

Manufacturer No:
2N2907A PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Bulk
Description:
TRANS PNP 60V 0.6A TO18
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N2907A PBFREE transistor, manufactured by Central Semiconductor Corp, is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of applications. It is packaged in a TO-18 metal can, which provides enhanced protection against moisture and environmental wear, making it more durable and reliable in various conditions.

Key Specifications

ParameterValue
Collector Base Voltage (VCBO)60V
Emitter Base Voltage (VEBO)5V
Collector Emitter Voltage (VCEO)60V
Max Collector Current600mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Current - Collector Cutoff (Max)10nA ICBO
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Transition Frequency200MHz
Turn On Time-Max (ton)45ns
Collector-Base Capacitance-Max8pF
Polarity/Channel TypePNP
Transistor TypePNP
Package TypeTO-18
DimensionsDiameter: 5.8mm, Height: 5.3mm, Length: 5.8mm, Width: 5.8mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free

Key Features

  • High Collector Current: Up to 600mA, making it suitable for applications requiring moderate to high current handling.
  • High Voltage Rating: Collector Emitter Voltage (VCEO) of 60V, ensuring robust performance in high-voltage applications.
  • Fast Switching Times: Turn On Time-Max (ton) of 45ns, ideal for high-speed switching applications.
  • High Gain Bandwidth Product: 200MHz, which is beneficial for high-frequency applications.
  • Durable Packaging: TO-18 metal can package provides protection against moisture and environmental wear.
  • Compliance with Regulations: ROHS3 Compliant and Lead Free, ensuring environmental and regulatory compliance.

Applications

The 2N2907A PBFREE transistor is versatile and can be used in a variety of applications, including:

  • Switching Circuits: Due to its fast switching times and high current handling, it is well-suited for switching applications.
  • Amplifier Circuits: Its high gain bandwidth product makes it suitable for amplifier circuits, especially in audio and RF applications.
  • Power Supplies: Can be used in power supply circuits where high current and voltage handling are required.
  • Automotive and Industrial Control Systems: Its durability and compliance with environmental regulations make it a good choice for automotive and industrial control systems.

Q & A

  1. What is the collector base voltage (VCBO) of the 2N2907A PBFREE transistor?
    The collector base voltage (VCBO) is 60V.
  2. What is the maximum collector current of the 2N2907A PBFREE transistor?
    The maximum collector current is 600mA.
  3. What is the DC current gain (hFE) of the 2N2907A PBFREE transistor?
    The DC current gain (hFE) is 100 @ 150mA, 10V.
  4. What is the transition frequency of the 2N2907A PBFREE transistor?
    The transition frequency is 200MHz.
  5. Is the 2N2907A PBFREE transistor lead-free and ROHS compliant?
    Yes, it is lead-free and ROHS3 compliant.
  6. What is the package type of the 2N2907A PBFREE transistor?
    The package type is TO-18.
  7. What are the dimensions of the 2N2907A PBFREE transistor?
    The dimensions are: Diameter: 5.8mm, Height: 5.3mm, Length: 5.8mm, Width: 5.8mm.
  8. What is the turn-on time of the 2N2907A PBFREE transistor?
    The turn-on time is 45ns.
  9. Can the 2N2907A PBFREE transistor be used in high-frequency applications?
    Yes, due to its high gain bandwidth product of 200MHz.
  10. Is the 2N2907A PBFREE transistor suitable for high-voltage applications?
    Yes, with a collector emitter voltage (VCEO) of 60V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:400 mW
Frequency - Transition:200MHz
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-206AA, TO-18-3 Metal Can
Supplier Device Package:TO-18
0 Remaining View Similar

In Stock

$2.46
50

Please send RFQ , we will respond immediately.

Same Series
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N2907A PBFREE 2N2904A PBFREE 2N2905A PBFREE
Manufacturer Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 120 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 400 mW 600 mW 600 mW
Frequency - Transition 200MHz 200MHz 200MHz
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-18 TO-39 TO-39

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BC857W,115
BC857W,115
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
2N5191G
2N5191G
onsemi
TRANS NPN 60V 4A TO126
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

BAS28 TR TIN/LEAD
BAS28 TR TIN/LEAD
Central Semiconductor Corp
DIODE SW 75V 250MA SOT143
1N4004GPP BK
1N4004GPP BK
Central Semiconductor Corp
DIODE GEN PURP 400V 1A DO41
1N4001G BK
1N4001G BK
Central Semiconductor Corp
DIODE GEN PURPOSE DO41
1N4002G BK
1N4002G BK
Central Semiconductor Corp
DIODE GEN PURPOSE DO41
1N4004G BK
1N4004G BK
Central Semiconductor Corp
DIODE GEN PURP 400V 1A DO41
1N4733A TR PBFREE
1N4733A TR PBFREE
Central Semiconductor Corp
DIODE ZENER 5.1V 1W DO41
BZX84C15 TR PBFREE
BZX84C15 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 15V 350MW SOT23
BC846BR TR PBFREE
BC846BR TR PBFREE
Central Semiconductor Corp
TRANS NPN 65V SOT23
TIP112 PBFREE
TIP112 PBFREE
Central Semiconductor Corp
TRANS NPN DARL 100V TO220-3
TIP112 TIN/LEAD
TIP112 TIN/LEAD
Central Semiconductor Corp
TRANS NPN DARL 100V TO220-3
TIP31C PBFREE
TIP31C PBFREE
Central Semiconductor Corp
TRANS NPN 100V 3A TO220-3
2N7002 BK PBFREE
2N7002 BK PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23