2N2907A PBFREE
  • Share:

Central Semiconductor Corp 2N2907A PBFREE

Manufacturer No:
2N2907A PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Bulk
Description:
TRANS PNP 60V 0.6A TO18
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N2907A PBFREE transistor, manufactured by Central Semiconductor Corp, is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of applications. It is packaged in a TO-18 metal can, which provides enhanced protection against moisture and environmental wear, making it more durable and reliable in various conditions.

Key Specifications

ParameterValue
Collector Base Voltage (VCBO)60V
Emitter Base Voltage (VEBO)5V
Collector Emitter Voltage (VCEO)60V
Max Collector Current600mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Current - Collector Cutoff (Max)10nA ICBO
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Transition Frequency200MHz
Turn On Time-Max (ton)45ns
Collector-Base Capacitance-Max8pF
Polarity/Channel TypePNP
Transistor TypePNP
Package TypeTO-18
DimensionsDiameter: 5.8mm, Height: 5.3mm, Length: 5.8mm, Width: 5.8mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free

Key Features

  • High Collector Current: Up to 600mA, making it suitable for applications requiring moderate to high current handling.
  • High Voltage Rating: Collector Emitter Voltage (VCEO) of 60V, ensuring robust performance in high-voltage applications.
  • Fast Switching Times: Turn On Time-Max (ton) of 45ns, ideal for high-speed switching applications.
  • High Gain Bandwidth Product: 200MHz, which is beneficial for high-frequency applications.
  • Durable Packaging: TO-18 metal can package provides protection against moisture and environmental wear.
  • Compliance with Regulations: ROHS3 Compliant and Lead Free, ensuring environmental and regulatory compliance.

Applications

The 2N2907A PBFREE transistor is versatile and can be used in a variety of applications, including:

  • Switching Circuits: Due to its fast switching times and high current handling, it is well-suited for switching applications.
  • Amplifier Circuits: Its high gain bandwidth product makes it suitable for amplifier circuits, especially in audio and RF applications.
  • Power Supplies: Can be used in power supply circuits where high current and voltage handling are required.
  • Automotive and Industrial Control Systems: Its durability and compliance with environmental regulations make it a good choice for automotive and industrial control systems.

Q & A

  1. What is the collector base voltage (VCBO) of the 2N2907A PBFREE transistor?
    The collector base voltage (VCBO) is 60V.
  2. What is the maximum collector current of the 2N2907A PBFREE transistor?
    The maximum collector current is 600mA.
  3. What is the DC current gain (hFE) of the 2N2907A PBFREE transistor?
    The DC current gain (hFE) is 100 @ 150mA, 10V.
  4. What is the transition frequency of the 2N2907A PBFREE transistor?
    The transition frequency is 200MHz.
  5. Is the 2N2907A PBFREE transistor lead-free and ROHS compliant?
    Yes, it is lead-free and ROHS3 compliant.
  6. What is the package type of the 2N2907A PBFREE transistor?
    The package type is TO-18.
  7. What are the dimensions of the 2N2907A PBFREE transistor?
    The dimensions are: Diameter: 5.8mm, Height: 5.3mm, Length: 5.8mm, Width: 5.8mm.
  8. What is the turn-on time of the 2N2907A PBFREE transistor?
    The turn-on time is 45ns.
  9. Can the 2N2907A PBFREE transistor be used in high-frequency applications?
    Yes, due to its high gain bandwidth product of 200MHz.
  10. Is the 2N2907A PBFREE transistor suitable for high-voltage applications?
    Yes, with a collector emitter voltage (VCEO) of 60V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:400 mW
Frequency - Transition:200MHz
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-206AA, TO-18-3 Metal Can
Supplier Device Package:TO-18
0 Remaining View Similar

In Stock

$2.46
50

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N2907A PBFREE 2N2904A PBFREE 2N2905A PBFREE
Manufacturer Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 120 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 400 mW 600 mW 600 mW
Frequency - Transition 200MHz 200MHz 200MHz
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-18 TO-39 TO-39

Related Product By Categories

BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BF820,215
BF820,215
Nexperia USA Inc.
TRANS NPN 300V 0.05A TO236AB
MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

1N4148 TR
1N4148 TR
Central Semiconductor Corp
DIODE GEN PURP 75V 150MA DO35
BZX84C12 TR PBFREE
BZX84C12 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 12V 350MW SOT23
BZX84C4V7 TR PBFREE
BZX84C4V7 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 4.7V 350MW SOT23
1N4746A TR PBFREE
1N4746A TR PBFREE
Central Semiconductor Corp
DIODE ZENER 18V 1W DO41
BZX84C15 BK PBFREE
BZX84C15 BK PBFREE
Central Semiconductor Corp
DIODE ZENER 15V 350MW SOT23
BZX84C30 BK
BZX84C30 BK
Central Semiconductor Corp
DIODE ZENER 30V 500MW SOT23
1N5333B TR
1N5333B TR
Central Semiconductor Corp
TRANSISTOR
2N6075A TIN/LEAD
2N6075A TIN/LEAD
Central Semiconductor Corp
TRIAC 4A 600V TO-126
2N1711 PBFREE
2N1711 PBFREE
Central Semiconductor Corp
TRANS NPN 50V 0.5A TO39
TIP41A PBFREE
TIP41A PBFREE
Central Semiconductor Corp
TRANS NPN 60V 6A TO220-3
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89
2N7002 BK PBFREE
2N7002 BK PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23