2N2907A PBFREE
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Central Semiconductor Corp 2N2907A PBFREE

Manufacturer No:
2N2907A PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Bulk
Description:
TRANS PNP 60V 0.6A TO18
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N2907A PBFREE transistor, manufactured by Central Semiconductor Corp, is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of applications. It is packaged in a TO-18 metal can, which provides enhanced protection against moisture and environmental wear, making it more durable and reliable in various conditions.

Key Specifications

ParameterValue
Collector Base Voltage (VCBO)60V
Emitter Base Voltage (VEBO)5V
Collector Emitter Voltage (VCEO)60V
Max Collector Current600mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Current - Collector Cutoff (Max)10nA ICBO
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Transition Frequency200MHz
Turn On Time-Max (ton)45ns
Collector-Base Capacitance-Max8pF
Polarity/Channel TypePNP
Transistor TypePNP
Package TypeTO-18
DimensionsDiameter: 5.8mm, Height: 5.3mm, Length: 5.8mm, Width: 5.8mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free

Key Features

  • High Collector Current: Up to 600mA, making it suitable for applications requiring moderate to high current handling.
  • High Voltage Rating: Collector Emitter Voltage (VCEO) of 60V, ensuring robust performance in high-voltage applications.
  • Fast Switching Times: Turn On Time-Max (ton) of 45ns, ideal for high-speed switching applications.
  • High Gain Bandwidth Product: 200MHz, which is beneficial for high-frequency applications.
  • Durable Packaging: TO-18 metal can package provides protection against moisture and environmental wear.
  • Compliance with Regulations: ROHS3 Compliant and Lead Free, ensuring environmental and regulatory compliance.

Applications

The 2N2907A PBFREE transistor is versatile and can be used in a variety of applications, including:

  • Switching Circuits: Due to its fast switching times and high current handling, it is well-suited for switching applications.
  • Amplifier Circuits: Its high gain bandwidth product makes it suitable for amplifier circuits, especially in audio and RF applications.
  • Power Supplies: Can be used in power supply circuits where high current and voltage handling are required.
  • Automotive and Industrial Control Systems: Its durability and compliance with environmental regulations make it a good choice for automotive and industrial control systems.

Q & A

  1. What is the collector base voltage (VCBO) of the 2N2907A PBFREE transistor?
    The collector base voltage (VCBO) is 60V.
  2. What is the maximum collector current of the 2N2907A PBFREE transistor?
    The maximum collector current is 600mA.
  3. What is the DC current gain (hFE) of the 2N2907A PBFREE transistor?
    The DC current gain (hFE) is 100 @ 150mA, 10V.
  4. What is the transition frequency of the 2N2907A PBFREE transistor?
    The transition frequency is 200MHz.
  5. Is the 2N2907A PBFREE transistor lead-free and ROHS compliant?
    Yes, it is lead-free and ROHS3 compliant.
  6. What is the package type of the 2N2907A PBFREE transistor?
    The package type is TO-18.
  7. What are the dimensions of the 2N2907A PBFREE transistor?
    The dimensions are: Diameter: 5.8mm, Height: 5.3mm, Length: 5.8mm, Width: 5.8mm.
  8. What is the turn-on time of the 2N2907A PBFREE transistor?
    The turn-on time is 45ns.
  9. Can the 2N2907A PBFREE transistor be used in high-frequency applications?
    Yes, due to its high gain bandwidth product of 200MHz.
  10. Is the 2N2907A PBFREE transistor suitable for high-voltage applications?
    Yes, with a collector emitter voltage (VCEO) of 60V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:400 mW
Frequency - Transition:200MHz
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-206AA, TO-18-3 Metal Can
Supplier Device Package:TO-18
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Similar Products

Part Number 2N2907A PBFREE 2N2904A PBFREE 2N2905A PBFREE
Manufacturer Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 120 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 400 mW 600 mW 600 mW
Frequency - Transition 200MHz 200MHz 200MHz
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-18 TO-39 TO-39

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