Overview
The 1N5337B BK is a small signal transistor produced by Central Semiconductor Corp. This component is part of the TO-18 case series and is designed for various electronic applications requiring reliable and efficient transistor performance.
The 1N5337B BK is characterized by its robust specifications, making it suitable for a range of uses, including amplification and switching in electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| BVCBO (Collector-Base Voltage) | 140 | V |
| BVCEO (Collector-Emitter Voltage) | 90 | V |
| BVEBO (Emitter-Base Voltage) | 7.0 | V |
| ICBO (Collector Current at VCB) | 0.01 | mA |
| hFE (Current Gain at IC and VCE) | 60-200 | - |
| VCE(SAT) (Collector-Emitter Saturation Voltage at IC) | 0.6 | V |
| Cob (Output Capacitance) | 10 | pF |
| fT (Transition Frequency) | 150 | MHz |
| ton (Turn-On Time) | - | ns |
| toff (Turn-Off Time) | - | ns |
Key Features
- High Collector-Base Voltage (BVCBO): Up to 140V, ensuring robust performance in high-voltage applications.
- High Collector-Emitter Voltage (BVCEO): Up to 90V, suitable for a variety of circuit designs.
- Low Emitter-Base Voltage (BVEBO): 7.0V, which helps in reducing power consumption.
- Wide Current Gain Range (hFE): 60-200, providing flexibility in amplifier and switch applications.
- Low Collector-Emitter Saturation Voltage (VCE(SAT)): 0.6V, minimizing power loss in saturation mode.
- High Transition Frequency (fT): 150 MHz, suitable for high-frequency applications.
Applications
- Amplifier Circuits: The 1N5337B BK can be used in various amplifier configurations due to its high current gain and low saturation voltage.
- Switching Circuits: Its robust specifications make it suitable for switching applications where high reliability and low power consumption are required.
- High-Frequency Applications: The transistor's high transition frequency makes it appropriate for use in high-frequency circuits such as RF and IF stages.
- General Purpose Electronics: It can be used in a wide range of general-purpose electronic circuits requiring a reliable and efficient transistor.
Q & A
- What is the collector-base voltage (BVCBO) of the 1N5337B BK transistor?
The collector-base voltage (BVCBO) of the 1N5337B BK transistor is up to 140V.
- What is the current gain (hFE) range of the 1N5337B BK transistor?
The current gain (hFE) range of the 1N5337B BK transistor is 60-200.
- What is the collector-emitter saturation voltage (VCE(SAT)) of the 1N5337B BK transistor?
The collector-emitter saturation voltage (VCE(SAT)) of the 1N5337B BK transistor is 0.6V.
- What is the transition frequency (fT) of the 1N5337B BK transistor?
The transition frequency (fT) of the 1N5337B BK transistor is 150 MHz.
- In what type of case is the 1N5337B BK transistor packaged?
The 1N5337B BK transistor is packaged in a TO-18 case.
- What are some common applications of the 1N5337B BK transistor?
The 1N5337B BK transistor is commonly used in amplifier circuits, switching circuits, high-frequency applications, and general-purpose electronics.
- What is the emitter-base voltage (BVEBO) of the 1N5337B BK transistor?
The emitter-base voltage (BVEBO) of the 1N5337B BK transistor is 7.0V.
- What is the output capacitance (Cob) of the 1N5337B BK transistor?
The output capacitance (Cob) of the 1N5337B BK transistor is 10 pF.
- Is the 1N5337B BK transistor suitable for high-voltage applications?
Yes, the 1N5337B BK transistor is suitable for high-voltage applications due to its high collector-base and collector-emitter voltage ratings.
- Where can I find detailed specifications for the 1N5337B BK transistor?
Detailed specifications for the 1N5337B BK transistor can be found in the datasheet available on the Central Semiconductor Corp website or through authorized distributors like Mouser Electronics.
