BC817-16-F2-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd BC817-16-F2-0000HF

Manufacturer No:
BC817-16-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-16-F2-0000HF is an NPN silicon epitaxial planar transistor produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is designed for general-purpose switching and amplifier applications. It is packaged in a SOT-23-3L case, making it suitable for surface mount technology (SMT) and ideal for applications where space is limited. The transistor is fully RoHS compliant and meets various environmental and safety standards.

Key Specifications

Parameter Description Value Unit Conditions
Collector-Emitter Voltage (VCEO) Maximum Collector-Emitter Voltage 45 V IC = 10 mA, IB = 0
Collector-Base Voltage (VCBO) Maximum Collector-Base Voltage 50 V IC = 100 µA, VEB = 0
Emitter-Base Voltage (VEBO) Maximum Emitter-Base Voltage 5.0 V IE = 1 µA, IC = 0
Collector Current (IC) Maximum Collector Current 500 mA TA = 25°C
Total Device Power Dissipation (PD) Maximum Power Dissipation 310 mW TA = 25°C
Thermal Resistance, Junction to Ambient (RθJA) Thermal Resistance 403 °C/W
Junction and Storage Temperature Range (TJ, TSTG) Operating and Storage Temperature Range -65 to +150 °C
DC Current Gain (hFE) Minimum DC Current Gain 100 VCE = 1 V, IC = 100 mA
Collector-Emitter Saturation Voltage (VCE(SAT)) Maximum Collector-Emitter Saturation Voltage 0.7 V IC = 500 mA, IB = 50 mA

Key Features

  • Ideally suited for automatic insertion due to its SOT-23 package.
  • Epitaxial planar die construction for reliable performance.
  • Complementary PNP types available (BC807 series).
  • Suitable for switching and AF amplifier applications.
  • Totally lead-free and fully RoHS compliant.
  • Halogen and antimony free, making it a 'green' device.
  • Qualified to AEC-Q101 standards for high reliability.
  • Automotive-compliant parts available under separate datasheet (BC817-16Q/40Q).

Applications

  • General-purpose switching applications.
  • Amplifier circuits, including audio frequency (AF) amplifiers.
  • Automotive electronics, where high reliability is required.
  • Consumer electronics, such as in audio equipment and other electronic devices.
  • Industrial control systems and automation.

Q & A

  1. What is the maximum collector-emitter voltage of the BC817-16-F2-0000HF transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the package type of the BC817-16-F2-0000HF transistor?

    The transistor is packaged in a SOT-23-3L case.

  3. Is the BC817-16-F2-0000HF transistor RoHS compliant?
  4. What is the maximum collector current of the BC817-16-F2-0000HF transistor?

    The maximum collector current (IC) is 500 mA.

  5. What is the thermal resistance, junction to ambient, of the BC817-16-F2-0000HF transistor?

    The thermal resistance, junction to ambient (RθJA), is 403 °C/W.

  6. What is the operating and storage temperature range of the BC817-16-F2-0000HF transistor?

    The operating and storage temperature range is -65 to +150 °C.

  7. What is the minimum DC current gain of the BC817-16-F2-0000HF transistor?

    The minimum DC current gain (hFE) is 100 at VCE = 1 V and IC = 100 mA.

  8. What is the maximum collector-emitter saturation voltage of the BC817-16-F2-0000HF transistor?

    The maximum collector-emitter saturation voltage (VCE(SAT)) is 0.7 V at IC = 500 mA and IB = 50 mA.

  9. Is the BC817-16-F2-0000HF transistor suitable for automotive applications?
  10. What are some common applications of the BC817-16-F2-0000HF transistor?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.21
2,480

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

ST13003N
ST13003N
STMicroelectronics
TRANS NPN 400V 1A SOT32-3
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92
BC807-25-QVL
BC807-25-QVL
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB

Related Product By Brand

BAS40-05-F2-0000HF
BAS40-05-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 40V 0.2A SOT-23-3
BAV23C-F2-0000HF
BAV23C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 250V 0.2A SOT-23
BAW56-F2-0000HF
BAW56-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 100V 0.15A SOT-2
MUR1640FCT-B1-0000HF
MUR1640FCT-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
FAST DIODE 400V 16A ITO-220AB
1N4148WS-F2-0000HF
1N4148WS-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 100V 150MA SOD323
1N4004G-D1-3000
1N4004G-D1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 400V 1A DO41
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAT54W-F2-0000HF
BAT54W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 30V 200MA SOD123
BAS40-F2-0000HF
BAS40-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 200MA SOT23
BC857BW-F2-0000HF
BC857BW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.1A SOT323
BC847C-F2-0000HF
BC847C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.1A SOT23
BC807-25-F2-0000HF
BC807-25-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.5A SOT23