BYC15-600PQ
  • Share:

WeEn Semiconductors BYC15-600PQ

Manufacturer No:
BYC15-600PQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 15A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC15-600PQ is a hyperfast power diode produced by WeEn Semiconductors, although the datasheet often references NXP Semiconductors due to the component's origins. This diode is housed in a SOD59 (2-lead TO-220AC) plastic package, making it suitable for high-power applications. It is designed to offer fast switching capabilities, low leakage current, and low reverse recovery current, which are crucial for reducing switching losses in associated MOSFET or IGBT circuits.

Key Specifications

SymbolParameterConditionsMinTypMaxUnit
VRRMRepetitive peak reverse voltage--600V
IF(AV)Average forward currentδ = 0.5; Tmb ≤ 121 °C; square-wave pulse--15A
VFForward voltageIF = 15 A; Tj = 150 °C-1.42V
trrReverse recovery timeIF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C-1318ns
IFRMRepetitive peak forward currentδ = 0.5; tp = 25 µs; Tmb ≤ 121 °C; square-wave pulse--30A
IFSMNon-repetitive peak forward currenttp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse--200A
TstgStorage temperature--65175°C
TjJunction temperature--175°C

Key Features

  • Fast Switching: The BYC15-600PQ is designed for extremely fast switching, making it ideal for high-frequency applications.
  • Low Leakage Current: It features a low leakage current, which helps in reducing power losses.
  • Low Reverse Recovery Current: This diode has a low reverse recovery current, which is essential for minimizing switching losses in associated MOSFET or IGBT circuits.
  • Low Thermal Resistance: The component has low thermal resistance, ensuring efficient heat dissipation.
  • 2-lead TO-220AC Package: Housed in a SOD59 (2-lead TO-220AC) plastic package, it is suitable for heatsink mounting and has a single mounting hole.

Applications

  • Active PFC in Air Conditioners: The BYC15-600PQ is used in active power factor correction (PFC) circuits for air conditioners.
  • High Frequency Switched-Mode Power Supplies: It is suitable for high-frequency switched-mode power supplies due to its fast switching and low reverse recovery characteristics.
  • Continuous Current Mode (CCM) Power Factor Correction (PFC): This diode is also used in CCM PFC applications where fast switching and low losses are critical.

Q & A

  1. What is the repetitive peak reverse voltage of the BYC15-600PQ?
    The repetitive peak reverse voltage (VRRM) is 600 V.
  2. What is the average forward current rating of the BYC15-600PQ?
    The average forward current (IF(AV)) is up to 15 A under specified conditions.
  3. What is the forward voltage drop of the BYC15-600PQ at 15 A and 150 °C junction temperature?
    The forward voltage drop (VF) is typically 1.4 V and can be up to 2 V.
  4. What is the reverse recovery time of the BYC15-600PQ?
    The reverse recovery time (trr) is typically 13 ns and can be up to 18 ns.
  5. What are the storage and junction temperature limits for the BYC15-600PQ?
    The storage temperature (Tstg) range is -65 °C to 175 °C, and the junction temperature (Tj) limit is 175 °C.
  6. What type of package does the BYC15-600PQ come in?
    The BYC15-600PQ is housed in a SOD59 (2-lead TO-220AC) plastic package.
  7. What are some key applications of the BYC15-600PQ?
    Key applications include active PFC in air conditioners, high-frequency switched-mode power supplies, and CCM PFC.
  8. Why is the BYC15-600PQ considered a hyperfast power diode?
    It is considered hyperfast due to its extremely fast switching capabilities and low reverse recovery current.
  9. How does the BYC15-600PQ reduce switching losses in associated MOSFET or IGBT circuits?
    It reduces switching losses through its fast switching and low reverse recovery current characteristics.
  10. What is the non-repetitive peak forward current rating of the BYC15-600PQ?
    The non-repetitive peak forward current (IFSM) is up to 200 A under specified pulse conditions.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):15A
Voltage - Forward (Vf) (Max) @ If:3.2 V @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):18 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$1.24
418

Please send RFQ , we will respond immediately.

Same Series
ATS-19C-10-C3-R0
ATS-19C-10-C3-R0
HEATSINK 45X45X25MM XCUT T412

Similar Products

Part Number BYC15-600PQ BYC15X-600PQ BYC5-600PQ BYC10-600PQ
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 15A 15A 5A 10A
Voltage - Forward (Vf) (Max) @ If 3.2 V @ 15 A 3.2 V @ 15 A 3.3 V @ 5 A 1.8 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 18 ns 18 ns 25 ns 19 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V -
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220F TO-220AC TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) -65°C ~ 175°C 150°C (Max)

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BYQ28ED-200,118
BYQ28ED-200,118
WeEn Semiconductors
DIODE ARRAY GP 200V 10A DPAK
BYV42EB-200,118
BYV42EB-200,118
WeEn Semiconductors
DIODE ARRAY GP 200V 30A D2PAK
BT152-800R,127
BT152-800R,127
WeEn Semiconductors
SCR 800V 20A TO220AB
BT168GWF,115
BT168GWF,115
WeEn Semiconductors
SCR 600V 1A SC73
BT145-800RTQ
BT145-800RTQ
WeEn Semiconductors
SCR 800V 25A TO220AB
BT136-600E,127
BT136-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
BT134-600E,127
BT134-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A SOT82-3
BT134W-600D,115
BT134W-600D,115
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BT134W-600E,115
BT134W-600E,115
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BT137S-600E,118
BT137S-600E,118
WeEn Semiconductors
TRIAC SENS GATE 600V 8A DPAK
BTA316X-600B,127
BTA316X-600B,127
WeEn Semiconductors
TRIAC 600V 16A TO220-3
BT139-600-0Q
BT139-600-0Q
WeEn Semiconductors
BT139-600-0/SIL3P/STANDARD MAR