BYC15-600PQ
  • Share:

WeEn Semiconductors BYC15-600PQ

Manufacturer No:
BYC15-600PQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 15A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC15-600PQ is a hyperfast power diode produced by WeEn Semiconductors, although the datasheet often references NXP Semiconductors due to the component's origins. This diode is housed in a SOD59 (2-lead TO-220AC) plastic package, making it suitable for high-power applications. It is designed to offer fast switching capabilities, low leakage current, and low reverse recovery current, which are crucial for reducing switching losses in associated MOSFET or IGBT circuits.

Key Specifications

SymbolParameterConditionsMinTypMaxUnit
VRRMRepetitive peak reverse voltage--600V
IF(AV)Average forward currentδ = 0.5; Tmb ≤ 121 °C; square-wave pulse--15A
VFForward voltageIF = 15 A; Tj = 150 °C-1.42V
trrReverse recovery timeIF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C-1318ns
IFRMRepetitive peak forward currentδ = 0.5; tp = 25 µs; Tmb ≤ 121 °C; square-wave pulse--30A
IFSMNon-repetitive peak forward currenttp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse--200A
TstgStorage temperature--65175°C
TjJunction temperature--175°C

Key Features

  • Fast Switching: The BYC15-600PQ is designed for extremely fast switching, making it ideal for high-frequency applications.
  • Low Leakage Current: It features a low leakage current, which helps in reducing power losses.
  • Low Reverse Recovery Current: This diode has a low reverse recovery current, which is essential for minimizing switching losses in associated MOSFET or IGBT circuits.
  • Low Thermal Resistance: The component has low thermal resistance, ensuring efficient heat dissipation.
  • 2-lead TO-220AC Package: Housed in a SOD59 (2-lead TO-220AC) plastic package, it is suitable for heatsink mounting and has a single mounting hole.

Applications

  • Active PFC in Air Conditioners: The BYC15-600PQ is used in active power factor correction (PFC) circuits for air conditioners.
  • High Frequency Switched-Mode Power Supplies: It is suitable for high-frequency switched-mode power supplies due to its fast switching and low reverse recovery characteristics.
  • Continuous Current Mode (CCM) Power Factor Correction (PFC): This diode is also used in CCM PFC applications where fast switching and low losses are critical.

Q & A

  1. What is the repetitive peak reverse voltage of the BYC15-600PQ?
    The repetitive peak reverse voltage (VRRM) is 600 V.
  2. What is the average forward current rating of the BYC15-600PQ?
    The average forward current (IF(AV)) is up to 15 A under specified conditions.
  3. What is the forward voltage drop of the BYC15-600PQ at 15 A and 150 °C junction temperature?
    The forward voltage drop (VF) is typically 1.4 V and can be up to 2 V.
  4. What is the reverse recovery time of the BYC15-600PQ?
    The reverse recovery time (trr) is typically 13 ns and can be up to 18 ns.
  5. What are the storage and junction temperature limits for the BYC15-600PQ?
    The storage temperature (Tstg) range is -65 °C to 175 °C, and the junction temperature (Tj) limit is 175 °C.
  6. What type of package does the BYC15-600PQ come in?
    The BYC15-600PQ is housed in a SOD59 (2-lead TO-220AC) plastic package.
  7. What are some key applications of the BYC15-600PQ?
    Key applications include active PFC in air conditioners, high-frequency switched-mode power supplies, and CCM PFC.
  8. Why is the BYC15-600PQ considered a hyperfast power diode?
    It is considered hyperfast due to its extremely fast switching capabilities and low reverse recovery current.
  9. How does the BYC15-600PQ reduce switching losses in associated MOSFET or IGBT circuits?
    It reduces switching losses through its fast switching and low reverse recovery current characteristics.
  10. What is the non-repetitive peak forward current rating of the BYC15-600PQ?
    The non-repetitive peak forward current (IFSM) is up to 200 A under specified pulse conditions.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):15A
Voltage - Forward (Vf) (Max) @ If:3.2 V @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):18 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$1.24
418

Please send RFQ , we will respond immediately.

Same Series
ATS-19C-10-C3-R0
ATS-19C-10-C3-R0
HEATSINK 45X45X25MM XCUT T412

Similar Products

Part Number BYC15-600PQ BYC15X-600PQ BYC5-600PQ BYC10-600PQ
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 15A 15A 5A 10A
Voltage - Forward (Vf) (Max) @ If 3.2 V @ 15 A 3.2 V @ 15 A 3.3 V @ 5 A 1.8 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 18 ns 18 ns 25 ns 19 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V -
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220F TO-220AC TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) -65°C ~ 175°C 150°C (Max)

Related Product By Categories

MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

NXPSC10650DJ
NXPSC10650DJ
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A DPAK
BT151-650C,127
BT151-650C,127
WeEn Semiconductors
SCR 650V 12A TO220AB
BT151S-500L,118
BT151S-500L,118
WeEn Semiconductors
SCR 500V 12A DPAK
BT169G/DG,126
BT169G/DG,126
WeEn Semiconductors
SCR 600V 800MA TO92-3
BT169H-LML
BT169H-LML
WeEn Semiconductors
SCR 800V 800MA TO92-3
BT138-600,127
BT138-600,127
WeEn Semiconductors
TRIAC 600V 12A TO220AB
BTA416Y-600C,127
BTA416Y-600C,127
WeEn Semiconductors
TRIAC 600V 16A TO220AB
ACTT2X-800E/DGQ
ACTT2X-800E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 800V 2A TO220F
BT136-800E,127
BT136-800E,127
WeEn Semiconductors
TRIAC SENS GATE 800V 4A TO220AB
Z0109MA,412
Z0109MA,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
BT131W-600,135
BT131W-600,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BUJ100,412
BUJ100,412
WeEn Semiconductors
TRANS NPN 400V 1A TO92-3