MUR160/54
  • Share:

Vishay General Semiconductor - Diodes Division MUR160/54

Manufacturer No:
MUR160/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160/54 is a high-performance rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This device is part of the MURS160 series, known for its ultrafast reverse recovery time and high reliability. The MUR160/54 is designed to meet the demands of modern electronic systems, particularly in applications requiring fast switching and high efficiency.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 600 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 35 A
Maximum Instantaneous Forward Voltage (VF) 1.25 V @ 1 A
Reverse Recovery Time (trr) 75 ns
Reverse Leakage Current @ Vr 5 µA @ 600 V
Operating Junction and Storage Temperature Range -65°C to +175°C
Package SMB (DO-214AA)

Key Features

  • Glass Passivated Pellet Chip Junction: Ensures high reliability and durability.
  • Ultrafast Reverse Recovery Time: Ideal for high-frequency rectification and switching applications.
  • Ideal for Automated Placement: Suitable for automated assembly processes.
  • RoHS Compliant: Meets environmental regulations for lead-free devices.
  • High Surge Current Capability: Can handle peak forward surge currents up to 35 A.

Applications

The MUR160/54 is designed for use in various high-frequency and switching applications, including:

  • Switching mode converters and inverters.
  • Freewheeling diodes in power supplies and motor control circuits.
  • Consumer, computer, and telecommunication equipment.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MUR160/54?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward rectified current rating of the MUR160/54?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the peak forward surge current capability of the MUR160/54?

    The peak forward surge current (IFSM) is 35 A.

  4. What is the reverse recovery time of the MUR160/54?

    The reverse recovery time (trr) is 75 ns.

  5. What is the operating temperature range of the MUR160/54?

    The operating junction and storage temperature range is -65°C to +175°C.

  6. Is the MUR160/54 RoHS compliant?
  7. What package type is the MUR160/54 available in?

    The MUR160/54 is available in the SMB (DO-214AA) package.

  8. What are some typical applications for the MUR160/54?

    Typical applications include switching mode converters, inverters, and freewheeling diodes in power supplies and motor control circuits.

  9. What is the maximum instantaneous forward voltage of the MUR160/54?

    The maximum instantaneous forward voltage (VF) is 1.25 V at 1 A.

  10. Does the MUR160/54 meet any specific automotive standards?

    The MUR160/54 can be AEC-Q101 qualified, depending on the specific part number suffix.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AC, DO-15, Axial
Supplier Device Package:DO-204AC (DO-15)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
162

Please send RFQ , we will respond immediately.

Same Series
MUR160/54
MUR160/54
DIODE GEN PURP 600V 1A DO204AC
MUR140-E3/73
MUR140-E3/73
DIODE GEN PURP 400V 1A DO204AC
MUR140-E3/54
MUR140-E3/54
DIODE GEN PURP 400V 1A DO204AC
MUR160-E3/54
MUR160-E3/54
DIODE GEN PURP 600V 1A DO204AC

Similar Products

Part Number MUR160/54 MUR120/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 200 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 2 µA @ 200 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial
Supplier Device Package DO-204AC (DO-15) DO-204AC (DO-15)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

SM6T6V8CA-E3/5B
SM6T6V8CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM6T22CAHM3_A/H
SM6T22CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM6T33CAHM3_A/H
SM6T33CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T36AHE3_A/I
SM15T36AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T22CAHM3_A/I
SM15T22CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM6T22CAHM3/I
SM6T22CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAT54WS-G3-08
BAT54WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
BZX55C15-TR
BZX55C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX84C18-HE3-08
BZX84C18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84C62-HE3-18
BZX84C62-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3