Overview
The LL4150GS18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of Vishay's extensive portfolio of semiconductor products, known for their high performance and reliability. The LL4150GS18 is designed for high-speed switching and general-purpose applications in various industries, including computer and industrial sectors.
Key Specifications
| Parameter | Test Condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Repetitive peak reverse voltage | - | VRRM | 50 | V |
| Peak forward surge current | tp = 1 μs | IFSM | 4 | A |
| Forward continuous current | - | IF | 600 | mA |
| Average forward current | VR = 0 | IF(AV) | 300 | mA |
| Power dissipation | - | Ptot | 500 | mW |
| Thermal resistance junction to ambient air | On PC board, 50 mm x 50 mm x 1.6 mm | RthJA | 300 | K/W |
| Junction temperature | - | Tj | 175 | °C |
| Storage temperature range | - | Tstg | -65 to +175 | °C |
| Operating temperature range | - | Top | -55 to +175 | °C |
| Forward voltage | IF = 1 mA | VF | 0.540 - 0.620 | V |
| Reverse current | VR = 50 V | IR | 100 nA | - |
| Diode capacitance | VR = 0, f = 1 MHz, VHF = 50 mV | CD | 2.5 pF | - |
| Reverse recovery time | IF = IR = 10 mA to 100 mA, iR = 0.1 x IR, RL = 100 Ω | trr | 4 ns | - |
Key Features
- Silicon epitaxial planar diodes
- Low forward voltage drop
- High forward current capability
- MiniMELF (SOD-80) case, weighing approximately 31 mg
- Black cathode band for identification
- Available in tape and reel packaging (GS08 and GS18 options)
Applications
The LL4150GS18 diode is suitable for high-speed switching and general-purpose use in various applications, including:
- Computer applications
- Industrial applications
Q & A
- What is the repetitive peak reverse voltage of the LL4150GS18 diode?
The repetitive peak reverse voltage (VRRM) is 50 V.
- What is the forward continuous current rating of the LL4150GS18 diode?
The forward continuous current (IF) is 600 mA.
- What is the typical forward voltage drop at 1 mA for the LL4150GS18 diode?
The typical forward voltage (VF) at 1 mA is between 0.540 V and 0.620 V.
- What is the reverse recovery time of the LL4150GS18 diode?
The reverse recovery time (trr) is 4 ns.
- What is the junction temperature range for the LL4150GS18 diode?
The junction temperature range is from -55°C to +175°C.
- What is the storage temperature range for the LL4150GS18 diode?
The storage temperature range is from -65°C to +175°C.
- What type of packaging is available for the LL4150GS18 diode?
The diode is available in tape and reel packaging (GS08 and GS18 options).
- What is the thermal resistance junction to ambient air for the LL4150GS18 diode?
The thermal resistance junction to ambient air (RthJA) is 300 K/W on a PC board.
- What are some typical applications for the LL4150GS18 diode?
Typical applications include high-speed switching and general-purpose use in computer and industrial applications.
- Is the LL4150GS18 diode RoHS compliant?
Yes, the LL4150GS18 diode is RoHS compliant and lead-free.
