LL4150GS08
  • Share:

Vishay General Semiconductor - Diodes Division LL4150GS08

Manufacturer No:
LL4150GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 300MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The LL4150GS08 is a general-purpose diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is designed for a variety of applications requiring reliable and efficient rectification. With its surface-mount SOD-80 MiniMELF package, it is suitable for use in compact and high-density electronic designs. The LL4150GS08 is part of Vishay's extensive portfolio of diodes, which are known for their high performance and reliability in various markets including automotive, industrial, computing, and consumer electronics.

Key Specifications

ParameterValue
Voltage - Forward (Vf) (Max) @ If1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max)50 V
TechnologyStandard
Supplier Device PackageSOD-80 MiniMELF
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)4 ns
Package / CaseDO-213AC, MINI-MELF, SOD-80
Operating Temperature - Junction-55°C ~ 175°C
Mounting TypeSurface Mount
Current - Reverse Leakage @ Vr100 nA @ 50 V
Current - Average Rectified (Io)300mA
Capacitance @ Vr, F2.5pF @ 0V, 1MHz

Key Features

  • Fast Recovery Time: The LL4150GS08 features a fast recovery time of less than 500ns, making it suitable for high-frequency applications.
  • Low Forward Voltage: With a maximum forward voltage of 1 V at 200 mA, this diode minimizes power losses in rectification.
  • Compact Package: The SOD-80 MiniMELF package is designed for space-saving and high-density electronic designs.
  • Wide Operating Temperature Range: The diode operates within a junction temperature range of -55°C to 175°C, ensuring reliability in various environmental conditions.
  • RoHS Compliance: The LL4150GS08 is ROHS3 compliant, meeting environmental standards for lead-free electronics.

Applications

The LL4150GS08 is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Suitable for use in automotive electronics such as power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
  • Industrial Electronics: Used in industrial control systems, power supplies, and other high-reliability applications.
  • Consumer Electronics: Found in consumer devices requiring efficient rectification, such as power adapters and battery chargers.
  • Telecommunications: Employed in telecommunications equipment for signal rectification and protection.

Q & A

  1. What is the maximum DC reverse voltage of the LL4150GS08?
    The maximum DC reverse voltage of the LL4150GS08 is 50 V.
  2. What is the package type of the LL4150GS08?
    The LL4150GS08 comes in a SOD-80 MiniMELF package.
  3. What is the reverse recovery time of the LL4150GS08?
    The reverse recovery time of the LL4150GS08 is less than 4 ns.
  4. What is the operating temperature range of the LL4150GS08?
    The operating temperature range of the LL4150GS08 is -55°C to 175°C.
  5. Is the LL4150GS08 RoHS compliant?
    Yes, the LL4150GS08 is ROHS3 compliant.
  6. What is the average rectified current (Io) of the LL4150GS08?
    The average rectified current (Io) of the LL4150GS08 is 300 mA.
  7. What is the forward voltage (Vf) of the LL4150GS08 at 200 mA?
    The forward voltage (Vf) of the LL4150GS08 at 200 mA is 1 V.
  8. What is the capacitance of the LL4150GS08 at 0 V and 1 MHz?
    The capacitance of the LL4150GS08 at 0 V and 1 MHz is 2.5 pF.
  9. What type of mounting does the LL4150GS08 use?
    The LL4150GS08 uses surface mount technology.
  10. What are some common applications of the LL4150GS08?
    The LL4150GS08 is commonly used in automotive systems, industrial electronics, consumer electronics, and telecommunications equipment.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):300mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Capacitance @ Vr, F:2.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:SOD-80 MiniMELF
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.21
1,633

Please send RFQ , we will respond immediately.

Same Series
LL4150GS08
LL4150GS08
DIODE GEN PURP 50V 300MA SOD80

Similar Products

Part Number LL4150GS08 LS4150GS08 LL4150GS18
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 50 V
Current - Average Rectified (Io) 300mA 600mA 600mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 200 mA 1 V @ 200 mA 1 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 50 V 100 nA @ 50 V 100 nA @ 50 V
Capacitance @ Vr, F 2.5pF @ 0V, 1MHz 2.5pF @ 0V, 1MHz 2.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 SOD-80 Variant DO-213AC, MINI-MELF, SOD-80
Supplier Device Package SOD-80 MiniMELF SOD-80 QuadroMELF SOD-80 MiniMELF
Operating Temperature - Junction -55°C ~ 175°C 175°C (Max) -55°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY

Related Product By Brand

SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T7V5A-E3/57T
SM15T7V5A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
1.5KE6.8A-E3/51
1.5KE6.8A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAT54S-HE3-08
BAT54S-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAS16D-E3-08
BAS16D-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BZX884B12L-HG3-08
BZX884B12L-HG3-08
Vishay General Semiconductor - Diodes Division
ZENER DIODE DFN1006-2A
BZX84C22-E3-18
BZX84C22-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX384C6V8-HE3-08
BZX384C6V8-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323
BZX84B22-G3-18
BZX84B22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3