1N4148-P-TR
  • Share:

Vishay General Semiconductor - Diodes Division 1N4148-P-TR

Manufacturer No:
1N4148-P-TR
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 2A DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148-P-TR diode, produced by Vishay General Semiconductor - Diodes Division, is a silicon switching diode known for its fast switching time and high-speed response. It belongs to the silicon epitaxial planar diode family and is widely used in high-frequency circuits and fast switching applications. This diode is particularly suitable for environments with fluctuating temperatures, making it a reliable choice for automotive and industrial settings.

Key Specifications

Parameter Rating Conditions
Peak Reverse Voltage (VRRM) 100V Maximum
Forward Continuous Current (IF) 150mA @ 25°C
Peak Forward Current (IFSM) 1A Pulse width ≤ 1s
Forward Voltage Drop (VF) 1V @ IF = 10mA
Reverse Current 25nA @ VR = 20V
Reverse Recovery Time (trr) 4ns Typically
Operating Temperature Range -65°C to +175°C
Package Style DO-35 (SOD-27)
Mounting Method Through Hole

Key Features

  • Fast Switching Time: The 1N4148-P-TR diode has a reverse recovery time of approximately 4 nanoseconds, making it ideal for high-frequency switching applications.
  • Low Forward Voltage Drop: It exhibits a forward voltage drop of 1V at 10mA, which is crucial for small-signal applications requiring precise voltage control.
  • High Peak Inverse Voltage: The diode can block reverse voltages up to 100V, providing substantial protection against reverse voltage conditions.
  • Low Leakage Current: It has a very low leakage current in reverse-bias mode, helping maintain signal integrity in circuits that require stable voltage levels.
  • Compact Package: Available in a small DO-35 glass package, it is easy to use in compact designs or PCBs with limited space.
  • Reliability and Availability: This diode is highly reliable and widely available, making it a prime choice for long-term projects.

Applications

  • High-Frequency Circuits: Suitable for high-frequency applications due to its fast switching time.
  • Automotive and Industrial Settings: Operates over a wide temperature range (-65°C to +175°C), making it ideal for environments prone to fluctuating temperatures.
  • Precision Analog Circuits: Low leakage current helps maintain signal integrity in precision analog circuits and sensor applications.
  • Signal Switching and Rectification: Excellent choice for rectification, polarity protection, or signal switching applications.

Q & A

  1. What is the typical reverse recovery time of the 1N4148-P-TR diode?

    The reverse recovery time is typically around 4 nanoseconds.

  2. What is the maximum peak reverse voltage that the 1N4148-P-TR diode can handle?

    The diode can handle a maximum peak reverse voltage of 100V.

  3. What is the forward continuous current rating of the 1N4148-P-TR diode?

    The forward continuous current rating is 150mA at 25°C.

  4. What is the operating temperature range of the 1N4148-P-TR diode?

    The operating temperature range is -65°C to +175°C.

  5. What type of package does the 1N4148-P-TR diode come in?

    The diode comes in a DO-35 (SOD-27) package.

  6. What is the typical forward voltage drop of the 1N4148-P-TR diode?

    The typical forward voltage drop is 1V at 10mA.

  7. Is the 1N4148-P-TR diode suitable for high-frequency applications?

    Yes, it is suitable due to its fast switching time.

  8. What is the maximum peak forward surge current of the 1N4148-P-TR diode?

    The maximum peak forward surge current is 1A for a pulse width ≤ 1s.

  9. Why is the 1N4148-P-TR diode used in precision analog circuits?

    It is used due to its low leakage current, which helps maintain signal integrity.

  10. Is the 1N4148-P-TR diode widely available and reliable?

    Yes, it is highly reliable and widely available, making it a prime choice for long-term projects.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):8 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.16
3,412

Please send RFQ , we will respond immediately.

Same Series
1N4148-P-TAP
1N4148-P-TAP
DIODE GEN PURP 75V 2A DO35

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

SM15T36A-E3/57T
SM15T36A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T39CA-M3/57T
SM15T39CA-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
BAW56-E3-08
BAW56-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BAS70-05-E3-18
BAS70-05-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BZX84B4V7-E3-08
BZX84B4V7-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX84B4V3-E3-18
BZX84B4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84B5V1-HE3-18
BZX84B5V1-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 300MW SOT23-3
BZX84C43-G3-08
BZX84C43-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 43V 300MW SOT23-3
BZX384C20-G3-18
BZX384C20-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 20V 200MW SOD323
BZX84B24-G3-08
BZX84B24-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3
BZX384B10-G3-18
BZX384B10-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323