1N4148-P-TAP
  • Share:

Vishay General Semiconductor - Diodes Division 1N4148-P-TAP

Manufacturer No:
1N4148-P-TAP
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 75V 2A DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148-P-TAP diode, produced by Vishay General Semiconductor - Diodes Division, is a standard silicon switching diode renowned for its fast switching time and high reliability. It belongs to the silicon epitaxial planar diode family and is widely used in high-frequency circuits and fast switching applications. This diode has replaced the older 1N914 and is often used interchangeably with it, differing mainly in leakage current specifications.

Key Specifications

Parameter Rating Conditions
Peak Reverse Voltage (VRRM) 100 V Maximum
Forward Continuous Current (IF) 300 mA @ 25°C
Peak Forward Current (IFSM) 1 A (for 1 s pulse width), 4 A (for 1 μs pulse width) Non-repetitive peak forward surge current
Forward Voltage Drop (VF) 1 V @ 10 mA
Reverse Current (IR) 25 nA @ 20 V, 5 μA @ 75 V
Reverse Recovery Time (trr) 4 ns
Operating Temperature -65°C to +175°C
Package DO-35 (DO-204AH), Axial

Key Features

  • Fast Switching Speed: The 1N4148-P-TAP diode has a reverse recovery time of approximately 4 nanoseconds, making it ideal for high-frequency switching applications.
  • Low Forward Voltage Drop: It exhibits a forward voltage drop of 1 V at 10 mA, which is beneficial for small-signal applications requiring precise voltage control.
  • High Reverse Voltage Rating: The diode can handle reverse voltages up to 100 V, providing substantial protection against reverse voltage conditions.
  • Low Leakage Current: It has a very low leakage current in reverse-bias mode, which helps maintain signal integrity in circuits.
  • Compact Package: Available in a small DO-35 glass package, making it suitable for compact designs or PCBs with limited space.[
  • Reliability and Availability: Known for its high reliability and wide availability, making it a preferred choice for long-term projects.[

Applications

  • High-Frequency Circuits: Suitable for applications up to about 100 MHz due to its fast switching capabilities.
  • Digital Circuits and Signal Processing: Used in digital logic gates, signal demodulation circuits, and other high-speed switching applications.[
  • Protection Circuits: Often used to protect sensitive components from overvoltage conditions, voltage spikes, or surges in industrial automation, automotive electronics, and power supplies.[
  • Pulse Generators and RF Applications: Beneficial in circuits requiring rapid switching capabilities such as pulse generators, frequency mixers, and radio frequency (RF) applications.[
  • Consumer Electronics to Industrial Equipment: Used for its consistent performance and versatility across various sectors.[

Q & A

  1. What is the typical reverse recovery time of the 1N4148-P-TAP diode?

    The typical reverse recovery time is approximately 4 nanoseconds.

  2. What is the maximum forward current rating of the 1N4148-P-TAP diode?

    The maximum forward continuous current rating is 300 mA, with a peak forward surge current capability of 1 A for 1 second.

  3. What is the forward voltage drop of the 1N4148-P-TAP diode at 10 mA?

    The forward voltage drop is typically 1 V at 10 mA.

  4. What is the maximum reverse voltage rating of the 1N4148-P-TAP diode?

    The diode can handle reverse voltages up to 100 V.

  5. What package types are available for the 1N4148-P-TAP diode?

    It is available in DO-35 (DO-204AH) axial packages.

  6. What are the operating temperature ranges for the 1N4148-P-TAP diode?

    The operating temperature range is from -65°C to +175°C.[

  7. Is the 1N4148-P-TAP diode suitable for high-frequency applications?

    Yes, it is suitable for high-frequency applications due to its fast switching speed and low reverse recovery time.[

  8. Can the 1N4148-P-TAP diode be used for protection against voltage spikes?

    Yes, it is often used to protect sensitive components from overvoltage conditions and voltage spikes.[

  9. What are some common applications of the 1N4148-P-TAP diode?

    Common applications include high-frequency circuits, digital circuits, signal processing, pulse generators, and RF applications.[

  10. Is the 1N4148-P-TAP diode RoHS compliant?

    Yes, the 1N4148-P-TAP diode is lead-free and RoHS compliant.[

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):8 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.16
5,228

Please send RFQ , we will respond immediately.

Same Series
1N4148-P-TAP
1N4148-P-TAP
DIODE GEN PURP 75V 2A DO35

Related Product By Categories

PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

SMBJ5.0CA-E3/5B
SMBJ5.0CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM6T15A-M3/5B
SM6T15A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T68A-E3/5B
SM6T68A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T15AHM3_A/I
SM15T15AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SMBJ5.0CAHM3/H
SMBJ5.0CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
BAT54A-HE3-08
BAT54A-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAT42WS-E3-18
BAT42WS-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
1N4007GPEHE3/91
1N4007GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX384C15-G3-08
BZX384C15-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX84B24-E3-08
BZX84B24-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3
BZX384C11-G3-18
BZX384C11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323