RB751V-40WS RRG
  • Share:

Taiwan Semiconductor Corporation RB751V-40WS RRG

Manufacturer No:
RB751V-40WS RRG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 30MA SOD323F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751V-40WS RRG is a Schottky Barrier Diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency and low-loss applications, making it suitable for various electronic circuits. It is packaged in the SOD-323 case, which is a small outline diode package, ideal for surface mount technology (SMT) assembly.

Although the RB751V-40 is not recommended for new designs, it remains available for existing projects and maintenance purposes. For new designs, it is advised to consider the recommended replacement products provided by the manufacturer.

Key Specifications

Parameter Value
Part Number RB751V-40WS RRG
Manufacturer Taiwan Semiconductor Corporation
Description Schottky Barrier Diode, 40V, 30mA, SOD-323
Voltage - DC Reverse (Vr) (Max) 40 V
Voltage - Forward (Vf) (Max) @ If 370 mV @ 1 mA
Average Rectified Forward Current (Io) 30 mA
Forward Surge Current (IFSM) 0.2 A
Reverse Current (IR) (Max) 500 nA @ 30 V
Storage Temperature -40°C to 125°C
Mounting Type Surface Mount
Package SOD-323 (SC-76)
RoHS Status RoHS Compliant

Key Features

  • Low Forward Voltage Drop: The RB751V-40WS RRG features a low forward voltage drop of 370 mV at 1 mA, making it efficient for power management applications.
  • High Efficiency: The Schottky barrier diode is designed to minimize power losses, enhancing the overall efficiency of the circuit.
  • Compact Package: The SOD-323 package is small and suitable for surface mount technology, allowing for dense circuit designs.
  • RoHS Compliant: The diode is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
  • Wide Operating Temperature Range: The diode can operate over a temperature range of -40°C to 125°C, making it versatile for various environmental conditions.

Applications

  • Power Supplies: The RB751V-40WS RRG is suitable for use in power supply circuits where low forward voltage drop and high efficiency are critical.
  • Switching Circuits: It can be used in switching circuits to reduce power losses and improve overall circuit efficiency.
  • Rectifier Circuits: The diode is effective in rectifier circuits due to its low forward voltage and high reverse voltage ratings.
  • Automotive Electronics: Its wide operating temperature range makes it suitable for automotive applications.

Q & A

  1. What is the maximum reverse voltage of the RB751V-40WS RRG?

    The maximum reverse voltage is 40 V.

  2. What is the forward voltage drop at 1 mA for this diode?

    The forward voltage drop at 1 mA is 370 mV.

  3. What is the average rectified forward current (Io) of the RB751V-40WS RRG?

    The average rectified forward current (Io) is 30 mA.

  4. Is the RB751V-40WS RRG RoHS compliant?

    Yes, the diode is RoHS compliant.

  5. What is the package type of the RB751V-40WS RRG?

    The package type is SOD-323 (SC-76).

  6. What is the storage temperature range for this diode?

    The storage temperature range is -40°C to 125°C.

  7. Why is the RB751V-40 not recommended for new designs?

    The RB751V-40 is not recommended for new designs due to the availability of more advanced and recommended replacement products.

  8. What are some recommended replacement products for the RB751V-40?

    Recommended replacement products include the RB751V-40TE-17 and RB751VM-40TE-17, which offer similar specifications and improved performance.

  9. What are the typical applications of the RB751V-40WS RRG?

    Typical applications include power supplies, switching circuits, rectifier circuits, and automotive electronics.

  10. How does the RB751V-40WS RRG contribute to circuit efficiency?

    The diode contributes to circuit efficiency through its low forward voltage drop and high efficiency, minimizing power losses in the circuit.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:370 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 nA @ 40 V
Capacitance @ Vr, F:2pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:-40°C ~ 125°C
0 Remaining View Similar

In Stock

$0.30
2,067

Please send RFQ , we will respond immediately.

Related Product By Categories

STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BAT54T REG
BAT54T REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
MUR820HC0G
MUR820HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
BAT43X-M0 RS
BAT43X-M0 RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZX84C3V0 RFG
BZX84C3V0 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 300MW SOT23
BZX84C27 RFG
BZX84C27 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 27V 300MW SOT23
BZV55B11 L1G
BZV55B11 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZX55C18 A0G
BZX55C18 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW DO35
BZX79B3V6 A0G
BZX79B3V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW DO35
BZX79C20 A0G
BZX79C20 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW DO35
BC850CW RFG
BC850CW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323