RB751V-40WS RRG
  • Share:

Taiwan Semiconductor Corporation RB751V-40WS RRG

Manufacturer No:
RB751V-40WS RRG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 30MA SOD323F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751V-40WS RRG is a Schottky Barrier Diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency and low-loss applications, making it suitable for various electronic circuits. It is packaged in the SOD-323 case, which is a small outline diode package, ideal for surface mount technology (SMT) assembly.

Although the RB751V-40 is not recommended for new designs, it remains available for existing projects and maintenance purposes. For new designs, it is advised to consider the recommended replacement products provided by the manufacturer.

Key Specifications

Parameter Value
Part Number RB751V-40WS RRG
Manufacturer Taiwan Semiconductor Corporation
Description Schottky Barrier Diode, 40V, 30mA, SOD-323
Voltage - DC Reverse (Vr) (Max) 40 V
Voltage - Forward (Vf) (Max) @ If 370 mV @ 1 mA
Average Rectified Forward Current (Io) 30 mA
Forward Surge Current (IFSM) 0.2 A
Reverse Current (IR) (Max) 500 nA @ 30 V
Storage Temperature -40°C to 125°C
Mounting Type Surface Mount
Package SOD-323 (SC-76)
RoHS Status RoHS Compliant

Key Features

  • Low Forward Voltage Drop: The RB751V-40WS RRG features a low forward voltage drop of 370 mV at 1 mA, making it efficient for power management applications.
  • High Efficiency: The Schottky barrier diode is designed to minimize power losses, enhancing the overall efficiency of the circuit.
  • Compact Package: The SOD-323 package is small and suitable for surface mount technology, allowing for dense circuit designs.
  • RoHS Compliant: The diode is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
  • Wide Operating Temperature Range: The diode can operate over a temperature range of -40°C to 125°C, making it versatile for various environmental conditions.

Applications

  • Power Supplies: The RB751V-40WS RRG is suitable for use in power supply circuits where low forward voltage drop and high efficiency are critical.
  • Switching Circuits: It can be used in switching circuits to reduce power losses and improve overall circuit efficiency.
  • Rectifier Circuits: The diode is effective in rectifier circuits due to its low forward voltage and high reverse voltage ratings.
  • Automotive Electronics: Its wide operating temperature range makes it suitable for automotive applications.

Q & A

  1. What is the maximum reverse voltage of the RB751V-40WS RRG?

    The maximum reverse voltage is 40 V.

  2. What is the forward voltage drop at 1 mA for this diode?

    The forward voltage drop at 1 mA is 370 mV.

  3. What is the average rectified forward current (Io) of the RB751V-40WS RRG?

    The average rectified forward current (Io) is 30 mA.

  4. Is the RB751V-40WS RRG RoHS compliant?

    Yes, the diode is RoHS compliant.

  5. What is the package type of the RB751V-40WS RRG?

    The package type is SOD-323 (SC-76).

  6. What is the storage temperature range for this diode?

    The storage temperature range is -40°C to 125°C.

  7. Why is the RB751V-40 not recommended for new designs?

    The RB751V-40 is not recommended for new designs due to the availability of more advanced and recommended replacement products.

  8. What are some recommended replacement products for the RB751V-40?

    Recommended replacement products include the RB751V-40TE-17 and RB751VM-40TE-17, which offer similar specifications and improved performance.

  9. What are the typical applications of the RB751V-40WS RRG?

    Typical applications include power supplies, switching circuits, rectifier circuits, and automotive electronics.

  10. How does the RB751V-40WS RRG contribute to circuit efficiency?

    The diode contributes to circuit efficiency through its low forward voltage drop and high efficiency, minimizing power losses in the circuit.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:370 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 nA @ 40 V
Capacitance @ Vr, F:2pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:-40°C ~ 125°C
0 Remaining View Similar

In Stock

$0.30
2,067

Please send RFQ , we will respond immediately.

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

BZW06-15B B0G
BZW06-15B B0G
Taiwan Semiconductor Corporation
TVS DIODE 15.3VWM 32.5VC DO204AC
1N5821H
1N5821H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS85 L0G
BAS85 L0G
Taiwan Semiconductor Corporation
DIODE SCHTKY 30V 200MA MINI MELF
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MBR10100 C0G
MBR10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
LL4007G L0G
LL4007G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A MELF
BZV55B30 L1G
BZV55B30 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55C13 L1G
BZV55C13 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZX55C10 A0G
BZX55C10 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW DO35
BZX79B3V6 A0G
BZX79B3V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW DO35
BC850CW RFG
BC850CW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323
TS321CX5 RFG
TS321CX5 RFG
Taiwan Semiconductor Corporation
IC OPAMP GP 1 CIRCUIT SOT25