MUR860HC0G
  • Share:

Taiwan Semiconductor Corporation MUR860HC0G

Manufacturer No:
MUR860HC0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR860HC0G is a high-performance switch-mode power rectifier produced by Taiwan Semiconductor Corporation. This component is designed for use in various power electronics applications, including switching power supplies, inverters, and as free-wheeling diodes. The MUR860HC0G is part of a series known for its ultrafast recovery times and robust electrical characteristics, making it suitable for demanding environments.

Key Specifications

ParameterValueUnit
Peak Repetitive Reverse Voltage (VRRM)600V
Working Peak Reverse Voltage (VRWM)600V
Average Rectified Forward Current (IF(AV))8.0A
Peak Repetitive Forward Current (IFM)16A
Nonrepetitive Peak Surge Current (IFSM)100A
Operating Junction Temperature (TJ)-65 to +175°C
Storage Temperature Range (Tstg)-65 to +175°C
Maximum Instantaneous Forward Voltage (VF)1.50V
Maximum Reverse Recovery Time (TRR)25-60ns
Thermal Resistance, Junction-to-Case (RJC)3.0-4.75°C/W
Thermal Resistance, Junction-to-Ambient (RJA)73-75°C/W

Key Features

  • Ultrafast Recovery Time: The MUR860HC0G features ultrafast recovery times of 25-60 nanoseconds, making it ideal for high-frequency applications.
  • High Operating Junction Temperature: The component can operate within a temperature range of -65°C to +175°C, ensuring reliability in harsh environments.
  • Low Forward Voltage: It has a low forward voltage drop, reducing power losses and improving efficiency.
  • Low Leakage Current: The device exhibits low leakage current, which is crucial for minimizing standby power consumption.
  • ESD Ratings: The MUR860HC0G has high ESD ratings, providing robust protection against electrostatic discharges.
  • AEC-Q101 Qualified: This component is qualified to the AEC-Q101 standard, making it suitable for automotive and other demanding applications.
  • Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.

Applications

The MUR860HC0G is versatile and can be used in a variety of applications, including:

  • Switching Power Supplies: Ideal for use in switching power supplies due to its ultrafast recovery time and low forward voltage drop.
  • Inverters: Suitable for inverter applications where high efficiency and reliability are critical.
  • Automotive Systems: Qualified to AEC-Q101 standards, making it suitable for various automotive power electronics.
  • Industrial Control Systems: Used in industrial control systems where robust and reliable power rectification is required.

Q & A

  1. What is the peak repetitive reverse voltage of the MUR860HC0G?
    The peak repetitive reverse voltage (VRRM) of the MUR860HC0G is 600 V.
  2. What is the maximum operating junction temperature of the MUR860HC0G?
    The maximum operating junction temperature (TJ) is +175°C.
  3. What is the average rectified forward current of the MUR860HC0G?
    The average rectified forward current (IF(AV)) is 8.0 A.
  4. Is the MUR860HC0G AEC-Q101 qualified?
    Yes, the MUR860HC0G is qualified to the AEC-Q101 standard.
  5. What is the maximum reverse recovery time of the MUR860HC0G?
    The maximum reverse recovery time (TRR) is between 25-60 nanoseconds.
  6. Is the MUR860HC0G Pb-free and RoHS compliant?
    Yes, the MUR860HC0G is lead-free and RoHS compliant.
  7. What are the typical applications of the MUR860HC0G?
    The MUR860HC0G is typically used in switching power supplies, inverters, automotive systems, and industrial control systems.
  8. What is the thermal resistance, junction-to-case (RJC) of the MUR860HC0G?
    The thermal resistance, junction-to-case (RJC) ranges from 3.0 to 4.75 °C/W.
  9. Does the MUR860HC0G have high ESD ratings?
    Yes, the MUR860HC0G has high ESD ratings, providing robust protection against electrostatic discharges.
  10. What is the storage temperature range of the MUR860HC0G?
    The storage temperature range (Tstg) is -65°C to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
391

Please send RFQ , we will respond immediately.

Same Series
MUR820 C0G
MUR820 C0G
DIODE GEN PURP 200V 8A TO220AC
MUR840 C0G
MUR840 C0G
DIODE GEN PURP 400V 8A TO220AC
MUR840HC0G
MUR840HC0G
DIODE GEN PURP 400V 8A TO220AC
MUR860HC0G
MUR860HC0G
DIODE GEN PURP 600V 8A TO220AC

Similar Products

Part Number MUR860HC0G MUR8L60HC0G MUR820HC0G MUR840HC0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 200 V 400 V
Current - Average Rectified (Io) 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A 1.3 V @ 8 A 975 mV @ 8 A 1.3 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 65 ns 25 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

1.5KE120A R0G
1.5KE120A R0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
1.5KE120A A0G
1.5KE120A A0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAT54BR-G REG
BAT54BR-G REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MUR160HB0G
MUR160HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BZV55C5V6 L0G
BZV55C5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
ZM4733A L0G
ZM4733A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W MELF
BZV55B11 L1G
BZV55B11 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B4V7 L1G
BZV55B4V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZV55B5V6 L1G
BZV55B5V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF