MUR820HC0G
  • Share:

Taiwan Semiconductor Corporation MUR820HC0G

Manufacturer No:
MUR820HC0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tube
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR820HC0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-current and high-voltage applications, making it suitable for various industrial and automotive uses. The 'H' suffix indicates that this diode is AEC-Q101 qualified, ensuring it meets the stringent standards for automotive electronics. The 'G' suffix signifies that the diode is made with a green compound, adhering to environmental regulations. The TO-220AC package provides a robust and heat-dissipative design, enhancing the diode's performance and reliability.

Key Specifications

Parameter Value Unit
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 8 A
Voltage - Forward (Vf) (Max) @ If 1.3 V
Peak Forward Surge Current, 8.3 ms single half sine-wave 250 A
Maximum Instantaneous Forward Voltage (IF=8 A) 1.3 V
Operating Junction Temperature Range -55 to +175 °C
Storage Temperature Range -55 to +175 °C
Package TO-220AC

Key Features

  • AEC-Q101 Qualified: Meets the automotive industry's stringent quality and reliability standards.
  • High Current and Voltage Ratings: Capable of handling up to 8A average rectified current and 200V DC reverse voltage.
  • Green Compound: Environmentally friendly, adhering to RoHS and other environmental regulations.
  • TO-220AC Package: Provides excellent heat dissipation and mechanical strength.
  • Wide Operating Temperature Range: Operates from -55°C to +175°C, making it suitable for diverse applications.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Supplies: Used in high-current and high-voltage power supply circuits.
  • Rectifier Circuits: Ideal for bridge rectifiers, half-wave rectifiers, and other rectification applications.
  • Motor Control and Drive Systems: Can be used in motor control circuits due to its high current handling capability.

Q & A

  1. What is the maximum DC reverse voltage of the MUR820HC0G diode?

    The maximum DC reverse voltage is 200V.

  2. What is the average rectified current rating of the MUR820HC0G?

    The average rectified current rating is 8A.

  3. Is the MUR820HC0G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified.

  4. What is the package type of the MUR820HC0G?

    The package type is TO-220AC.

  5. What is the operating junction temperature range of the MUR820HC0G?

    The operating junction temperature range is -55°C to +175°C.

  6. What is the maximum instantaneous forward voltage of the MUR820HC0G at 8A?

    The maximum instantaneous forward voltage at 8A is 1.3V.

  7. Is the MUR820HC0G made with a green compound?

    Yes, it is made with a green compound.

  8. What is the peak forward surge current rating of the MUR820HC0G?

    The peak forward surge current rating is 250A for an 8.3 ms single half sine-wave.

  9. What are some common applications of the MUR820HC0G?

    Common applications include automotive systems, industrial power supplies, rectifier circuits, and motor control and drive systems.

  10. What is the storage temperature range for the MUR820HC0G?

    The storage temperature range is -55°C to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:975 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
20

Please send RFQ , we will respond immediately.

Same Series
MUR820 C0G
MUR820 C0G
DIODE GEN PURP 200V 8A TO220AC
MUR840 C0G
MUR840 C0G
DIODE GEN PURP 400V 8A TO220AC
MUR840HC0G
MUR840HC0G
DIODE GEN PURP 400V 8A TO220AC
MUR860HC0G
MUR860HC0G
DIODE GEN PURP 600V 8A TO220AC

Similar Products

Part Number MUR820HC0G MUR840HC0G MUR860HC0G MUR820 C0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V
Current - Average Rectified (Io) 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 8 A 1.3 V @ 8 A 1.7 V @ 8 A 975 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 50 ns 50 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA

Related Product By Brand

1.5KE68AH
1.5KE68AH
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
MUR460
MUR460
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N4004G R1G
1N4004G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR420S M6G
MUR420S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
1N5406GHA0G
1N5406GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZX84C30 RFG
BZX84C30 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 30V 300MW SOT23
BZV55C13 L1G
BZV55C13 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZX585B9V1 RKG
BZX585B9V1 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F
BC848BW RFG
BC848BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT323