MUR820HC0G
  • Share:

Taiwan Semiconductor Corporation MUR820HC0G

Manufacturer No:
MUR820HC0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tube
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR820HC0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-current and high-voltage applications, making it suitable for various industrial and automotive uses. The 'H' suffix indicates that this diode is AEC-Q101 qualified, ensuring it meets the stringent standards for automotive electronics. The 'G' suffix signifies that the diode is made with a green compound, adhering to environmental regulations. The TO-220AC package provides a robust and heat-dissipative design, enhancing the diode's performance and reliability.

Key Specifications

Parameter Value Unit
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 8 A
Voltage - Forward (Vf) (Max) @ If 1.3 V
Peak Forward Surge Current, 8.3 ms single half sine-wave 250 A
Maximum Instantaneous Forward Voltage (IF=8 A) 1.3 V
Operating Junction Temperature Range -55 to +175 °C
Storage Temperature Range -55 to +175 °C
Package TO-220AC

Key Features

  • AEC-Q101 Qualified: Meets the automotive industry's stringent quality and reliability standards.
  • High Current and Voltage Ratings: Capable of handling up to 8A average rectified current and 200V DC reverse voltage.
  • Green Compound: Environmentally friendly, adhering to RoHS and other environmental regulations.
  • TO-220AC Package: Provides excellent heat dissipation and mechanical strength.
  • Wide Operating Temperature Range: Operates from -55°C to +175°C, making it suitable for diverse applications.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Supplies: Used in high-current and high-voltage power supply circuits.
  • Rectifier Circuits: Ideal for bridge rectifiers, half-wave rectifiers, and other rectification applications.
  • Motor Control and Drive Systems: Can be used in motor control circuits due to its high current handling capability.

Q & A

  1. What is the maximum DC reverse voltage of the MUR820HC0G diode?

    The maximum DC reverse voltage is 200V.

  2. What is the average rectified current rating of the MUR820HC0G?

    The average rectified current rating is 8A.

  3. Is the MUR820HC0G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified.

  4. What is the package type of the MUR820HC0G?

    The package type is TO-220AC.

  5. What is the operating junction temperature range of the MUR820HC0G?

    The operating junction temperature range is -55°C to +175°C.

  6. What is the maximum instantaneous forward voltage of the MUR820HC0G at 8A?

    The maximum instantaneous forward voltage at 8A is 1.3V.

  7. Is the MUR820HC0G made with a green compound?

    Yes, it is made with a green compound.

  8. What is the peak forward surge current rating of the MUR820HC0G?

    The peak forward surge current rating is 250A for an 8.3 ms single half sine-wave.

  9. What are some common applications of the MUR820HC0G?

    Common applications include automotive systems, industrial power supplies, rectifier circuits, and motor control and drive systems.

  10. What is the storage temperature range for the MUR820HC0G?

    The storage temperature range is -55°C to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:975 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
20

Please send RFQ , we will respond immediately.

Same Series
MUR820 C0G
MUR820 C0G
DIODE GEN PURP 200V 8A TO220AC
MUR840 C0G
MUR840 C0G
DIODE GEN PURP 400V 8A TO220AC
MUR840HC0G
MUR840HC0G
DIODE GEN PURP 400V 8A TO220AC
MUR860HC0G
MUR860HC0G
DIODE GEN PURP 600V 8A TO220AC

Similar Products

Part Number MUR820HC0G MUR840HC0G MUR860HC0G MUR820 C0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V
Current - Average Rectified (Io) 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 8 A 1.3 V @ 8 A 1.7 V @ 8 A 975 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 50 ns 50 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

1.5KE6.8AH
1.5KE6.8AH
Taiwan Semiconductor Corporation
TVS 1500W 6.8V 5% UNIDIR DO-201
BAS20W RVG
BAS20W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOT323
MUR420SHR7G
MUR420SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
1N4002GHA0G
1N4002GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT42-L0 R0
BAT42-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B16 L1G
BZV55B16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55B20 L1G
BZV55B20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZV55B2V4 L1G
BZV55B2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZV55B68 L1G
BZV55B68 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55C2V7 L1G
BZV55C2V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZX585B9V1 RKG
BZX585B9V1 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F