MUR820HC0G
  • Share:

Taiwan Semiconductor Corporation MUR820HC0G

Manufacturer No:
MUR820HC0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tube
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR820HC0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-current and high-voltage applications, making it suitable for various industrial and automotive uses. The 'H' suffix indicates that this diode is AEC-Q101 qualified, ensuring it meets the stringent standards for automotive electronics. The 'G' suffix signifies that the diode is made with a green compound, adhering to environmental regulations. The TO-220AC package provides a robust and heat-dissipative design, enhancing the diode's performance and reliability.

Key Specifications

Parameter Value Unit
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 8 A
Voltage - Forward (Vf) (Max) @ If 1.3 V
Peak Forward Surge Current, 8.3 ms single half sine-wave 250 A
Maximum Instantaneous Forward Voltage (IF=8 A) 1.3 V
Operating Junction Temperature Range -55 to +175 °C
Storage Temperature Range -55 to +175 °C
Package TO-220AC

Key Features

  • AEC-Q101 Qualified: Meets the automotive industry's stringent quality and reliability standards.
  • High Current and Voltage Ratings: Capable of handling up to 8A average rectified current and 200V DC reverse voltage.
  • Green Compound: Environmentally friendly, adhering to RoHS and other environmental regulations.
  • TO-220AC Package: Provides excellent heat dissipation and mechanical strength.
  • Wide Operating Temperature Range: Operates from -55°C to +175°C, making it suitable for diverse applications.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Supplies: Used in high-current and high-voltage power supply circuits.
  • Rectifier Circuits: Ideal for bridge rectifiers, half-wave rectifiers, and other rectification applications.
  • Motor Control and Drive Systems: Can be used in motor control circuits due to its high current handling capability.

Q & A

  1. What is the maximum DC reverse voltage of the MUR820HC0G diode?

    The maximum DC reverse voltage is 200V.

  2. What is the average rectified current rating of the MUR820HC0G?

    The average rectified current rating is 8A.

  3. Is the MUR820HC0G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified.

  4. What is the package type of the MUR820HC0G?

    The package type is TO-220AC.

  5. What is the operating junction temperature range of the MUR820HC0G?

    The operating junction temperature range is -55°C to +175°C.

  6. What is the maximum instantaneous forward voltage of the MUR820HC0G at 8A?

    The maximum instantaneous forward voltage at 8A is 1.3V.

  7. Is the MUR820HC0G made with a green compound?

    Yes, it is made with a green compound.

  8. What is the peak forward surge current rating of the MUR820HC0G?

    The peak forward surge current rating is 250A for an 8.3 ms single half sine-wave.

  9. What are some common applications of the MUR820HC0G?

    Common applications include automotive systems, industrial power supplies, rectifier circuits, and motor control and drive systems.

  10. What is the storage temperature range for the MUR820HC0G?

    The storage temperature range is -55°C to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:975 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
20

Please send RFQ , we will respond immediately.

Same Series
MUR820 C0G
MUR820 C0G
DIODE GEN PURP 200V 8A TO220AC
MUR840 C0G
MUR840 C0G
DIODE GEN PURP 400V 8A TO220AC
MUR840HC0G
MUR840HC0G
DIODE GEN PURP 400V 8A TO220AC
MUR860HC0G
MUR860HC0G
DIODE GEN PURP 600V 8A TO220AC

Similar Products

Part Number MUR820HC0G MUR840HC0G MUR860HC0G MUR820 C0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V
Current - Average Rectified (Io) 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 8 A 1.3 V @ 8 A 1.7 V @ 8 A 975 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 50 ns 50 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

1.5KE6.8A A0G
1.5KE6.8A A0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
MUR1640CTH
MUR1640CTH
Taiwan Semiconductor Corporation
DIODE ARRAY GP 400V 16A TO220AB
1N4001GHR1G
1N4001GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
BAT43X RSG
BAT43X RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD523F
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BZV55B22 L0G
BZV55B22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZX585B3V0 RSG
BZX585B3V0 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 200MW SOD523F
BZV55B7V5 L1G
BZV55B7V5 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
BZX585B6V2 RKG
BZX585B6V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 200MW SOD523F
BZX55C3V3 A0G
BZX55C3V3 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW DO35
BC846A RFG
BC846A RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23
BC847A RFG
BC847A RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23