Overview
The VNB10N07-E is a fully protected power MOSFET developed by STMicroelectronics using their VIPower M0 Technology. This device is designed to replace standard power MOSFETs in applications ranging from DC to 50 KHz. It is particularly suited for automotive and other harsh environment applications due to its built-in protection features such as thermal shut-down, linear current limitation, and overvoltage clamp.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source Voltage (Vds) | Internally Clamped | V |
| Input Voltage (Vin) | 18 | V |
| Drain Current (Id) | Internally Limited | A |
| Reverse DC Output Current (Ir) | -14 | A |
| Electrostatic Discharge (Vesd) | 2000 | V |
| Total Dissipation at Tc = 25°C (Ptot) | 50 | W |
| Operating Junction Temperature (Tj) | Internally Limited | °C |
| Case Operating Temperature (Tc) | Internally Limited | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Thermal Resistance Junction-case (Rthj-case) | 2.5 | °C/W |
| Thermal Resistance Junction-ambient (Rthj-amb) | 50 | °C/W |
| Static Drain-source On Resistance (Rds(on)) | 0.1 | Ω |
| Drain-source Clamp Voltage (Vclamp) | 60-80 | V |
Key Features
- Integrated Protection: Built-in thermal shut-down, linear current limitation, and overvoltage clamp to protect the device in harsh environments.
- ESD Protection: Compliant with the Human Body model.
- TTL Logic Compatibility: Can be driven from a TTL logic circuit with a small increase in Rds(on).
- Direct Access to Gate: The input pin is electrically connected to the gate of the internal power MOSFET, allowing it to behave like a standard power MOSFET.
- Diagnostic Feedback: Fault feedback can be detected by monitoring the voltage at the input pin.
- Low Current Drawn from Input Pin: Small DC current (Iiss) flows into the input pin to supply the internal circuitry.
- Automotive Grade: Suitable for automotive applications with RoHS compliance and Ecopack1 packaging.
Applications
The VNB10N07-E is designed for use in a variety of applications, including:
- Automotive Systems: Ideal for automotive environments due to its robust protection features and automotive grade certification.
- Power Management: Suitable for power management in industrial and consumer electronics where reliability and protection against overcurrent and overtemperature are crucial.
- Switching Applications: Can be used in switching applications from DC to 50 KHz, including motor control, power supplies, and other high-frequency switching circuits.
Q & A
- What is the primary technology used in the VNB10N07-E?
The VNB10N07-E is made using STMicroelectronics' VIPower M0 Technology.
- What are the key protection features of the VNB10N07-E?
The device includes thermal shut-down, linear current limitation, and overvoltage clamp protection.
- What is the maximum drain-source voltage (Vds) for the VNB10N07-E?
The drain-source voltage is internally clamped.
- Is the VNB10N07-E compatible with TTL logic circuits?
Yes, it can be driven from a TTL logic circuit with a small increase in Rds(on).
- How does the device provide diagnostic feedback?
Fault feedback can be detected by monitoring the voltage at the input pin.
- What is the typical static drain-source on resistance (Rds(on)) of the VNB10N07-E?
The typical Rds(on) is 0.1 Ω.
- What is the maximum operating junction temperature (Tj) for the VNB10N07-E?
The operating junction temperature is internally limited.
- Is the VNB10N07-E RoHS compliant?
Yes, it is RoHS compliant and packaged in Ecopack1.
- What are the typical applications for the VNB10N07-E?
It is suitable for automotive systems, power management, and high-frequency switching applications.
- What is the storage temperature range for the VNB10N07-E?
The storage temperature range is -55 to 150°C.
