Overview
The VNB20N07-E, produced by STMicroelectronics, is a fully protected power MOSFET designed using the VlPower M0 Technology. This device is intended to replace standard power MOSFETs in applications ranging from DC to 50 KHz. It features built-in thermal shut-down, linear current limitation, and overvoltage clamp, providing robust protection in harsh environments. The VNB20N07-E is part of the OMNIFET family, which includes the VNP20N07FI and VNV20N07, all offering enhanced reliability and protection features.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source Voltage (Vds) | Internally Clamped | V |
| Input Voltage (Vin) | 18 | V |
| Drain Current (Id) | Internally Limited, up to 20 A | A |
| Electrostatic Discharge (Vesd) | 2000 | V |
| Total Dissipation at Tc = 25°C (Ptot) | 83 W (D2PAK) | W |
| Operating Junction Temperature (Tj) | Internally Limited, up to 150°C | °C |
| Static Drain-source On Resistance (Rds(on)) | 0.05 Ω (Vin = 10 V, Id = 10 A) | Ω |
| Drain-source Clamp Voltage (Vclamp) | 70 V | V |
Key Features
- ESD Protection: Compliant with the Human Body model.
- Diagnostics Feedback: Fault feedback detectable through the input pin.
- Linear Current Limitation: Limits drain current to prevent overcurrent conditions.
- Short Circuit Protection: Protects against short circuit conditions.
- Thermal Shut Down: Automatically shuts down in case of overtemperature.
- Low Current Drawn from Input Pin: Minimizes power consumption.
- Direct Access to the Gate of the Power MOSFET: Allows for analog driving.
- Integrated Clamp: Provides overvoltage protection.
- Compatibility with Standard Power MOSFET: Easy replacement for standard MOSFETs.
Applications
The VNB20N07-E is suitable for a variety of applications, including:
- Automotive Systems: Due to its automotive-grade certification and robust protection features.
- Industrial Power Management: For applications requiring high reliability and protection against overcurrent and overtemperature.
- Power Switching: In DC to 50 KHz applications, particularly where inductive loads are involved.
- General Power Electronics: Where enhanced protection and reliability are crucial.
Q & A
- What is the maximum drain current of the VNB20N07-E?
The maximum drain current is internally limited up to 20 A.
- What is the operating junction temperature range of the VNB20N07-E?
The operating junction temperature is internally limited, with a maximum of 150°C.
- Does the VNB20N07-E have built-in ESD protection?
- How does the VNB20N07-E provide diagnostic feedback?
Fault feedback can be detected by monitoring the voltage at the input pin.
- What is the static drain-source on resistance of the VNB20N07-E?
The static drain-source on resistance (Rds(on)) is 0.05 Ω at Vin = 10 V and Id = 10 A.
- Is the VNB20N07-E compatible with standard power MOSFETs?
- What type of package is the VNB20N07-E available in?
The VNB20N07-E is available in the D2PAK package.
- What is the maximum total dissipation at Tc = 25°C for the VNB20N07-E?
The maximum total dissipation at Tc = 25°C is 83 W for the D2PAK package.
- Does the VNB20N07-E have overtemperature shutdown protection?
- How does the VNB20N07-E protect against short circuits?
The device has built-in short circuit protection based on sensing the chip temperature.
